OP290C Search Results

a789

Abstract: OP290 OP291 CP2900 agma ATM8 OP290A OP290B OP290C OP291C
Contextual Info: <0 Product Bulletin OP290 June 1996 o p te k GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features • W ide irradiance pattern • Significantly higher power output than GaAs at equivalent drive currents • T-1 3/4 package style

Contextual Info: OPJEK TECHNOLOGY INC ObE D | LVTASAO □□□□142 □ | O p to e le ctro n ics D iv is io n 7 *- t f / - £>/ T R W Electronic Components Group i m r Product Bulletin 5093 January 1985 N P N Silicon Phototransistors Types OP5QO, OP5QOSLD, OP5QOSLC, OP5GOSLB, QP500SLA

K-5550

Abstract: K5550 OP290C OP555 OP555A OP555B OP555C OP555D VRL1
Contextual Info: OPTEK Product Bulletin OP555A June 1996 NPN Silicon Phototransistors Types OP555A, OP555B, OP555C, OP555D • Wide receiving angle • Variety of sensitivity ranges • Side-looking package for space limited applications Collector-Emitter Voltage. 30 V

OP295

Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

Contextual Info: @ .O P IE K Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features • Wide irradiance pattern • Significantly higher power output than GaA s at equivalent drive currents • T-1 3/4 package style

OP290

Abstract: op292 21SO ma7k8
Contextual Info: i OPTEK Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types QP290, OP291, OP292 Series Features • Wide irradiance pattern • Significantly higher power output than GaAs at equivalent drive currents • T-1 3/4 package style • UL recognized, File No. S2047

QP802

Contextual Info: OPTEK TECHNOLOGY INC ObE D | tTTflSflO OOODl?b b O p ia s ie c iro n ic s u iv is io n T R W Electronic Components Group i i l f V Product Bulletin 5138 January 1985 N P N Silicon P h o to tra n s is to rs Types 0P800W , O P8Q1W , QP802W Fe a tu re s • Flat lensed for wide acceptance angle

OP160SL

Abstract: OP500 OP500SLC
Contextual Info: OPJEK TECHNOLOGY INC ObE D I bTTASAO D D O O m a D | 7 - V/ O p to e le c tro n ic s D iv is io n mm irtw w T R W Electronic C om ponents G roup Product Bulletin 5Q93 January 1985 NPIU Silicon Phototransistors Types OP5QO, QP500SLD, QP500SLC, OP5QOSLB, OPSOOSLA

OP290

Abstract: FTH A 001 26 10 OP290A OP290B OP290C OP291 OP291B OP291C OP292
Contextual Info: OPTEK Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e no ted • Wide irradiance pattern • Significantly higher power output than

OP168F

Abstract: OP290C OP508F OP508FA OP508FB OP508FC
Contextual Info: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

OP295

Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

cm2141

Abstract: OP160SL OP260SL OP500 OP500SLA OP500SLC
Contextual Info: OPTEK TECHNOLOGY INC DtE D | t ^ a s s o Optoelectronics Division □□□□m s □ | 'P - */i ^ o f T RW Electronic Components Group mm i f t w Product Bulletin 5 0 9 3 January 1985 w NPIU Silicon Phototransistors Types OP5QO, OP5QOSLD, OP5ÛOSLC, OP5QOSLB, OPSOOSLA

11C1 diode p

Abstract: mml 600 OP169SL OP509 OP509SLC OP509SLD
Contextual Info: OPTEK TECHNOLOGY INC ObE D | hTTSSaO 00□D154 7 | O p to e le ctro n ics' D iv is io n T R W Electronic C o m p o n e n ts G ro u p 7 7 W V Product Bulletin 5 1 1 4 January 1985 NPN Silicon Phototransistors Types QP509, 0P5Q9SLD, QP509SLC F e a tu re s A b s o lu te M a xim u m R a tin g s IT a - 2 5 °C unless otherwise noted

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

Contextual Info: O P JEK Product Bulletin OP290 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series .3 1 0 7 .8 7 _ .0 4 0 ( 1 .0 2 ) .2 9 0 ( 7 . 3 7 ) (N O T E 11) .1 0 0 ( 2 .5 4 ) NOM CATHODE M EAS U R EM EN T SU R FAC E • (N O T E 8)

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

OP295

Abstract: OP290 OP298B OP297FAB OP298 OP296 OP297 OP299 T-46 OP291
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP291 OP292 OP294 OP296 OP297 OP298 OP299 T-46
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP290C OP291 OP292 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: 0P296 OP290A OP290B OP290C OP291 OP291C OP292
Contextual Info: OPTEK Product Bulletin OP290 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series Features Absolute Maximum Ratings T a = 2 5 ° C unless o th e rw is e noted • Wide irradiance pattern • Significantly higher power output than

OP297FAB

Abstract: OP295 OP290 op295b
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an