diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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0T39
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA "H <D I S C R E T E / O P T O » F | ciDci7SSG OOlbbbfl 3 1~~ 99D 16668 D T- TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 8 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS ) INDUSTRIAL APPLICATIONS Unit in tnm
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DDlbb70
0T-39-I3
0T39
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E SSE T> • fafaSBial OOlbSSB T ■ Optoelectronic Devices LIQUID CRYSTAL DISPLAYS, STANDARD in order of character size (cont.) 69.8 x 38.0 17.8 VIEW ING MODE Reflective R-22 F-12 Transflective F-22 LTD242R-12 69.8 x 38.0
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LTD242R-12
LTD263R-12
LTD264R-12
LTD261R-12
LTD321R-12
LTA141R-12
LTD132R-11
LTD241R-12
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D IS CR ETE/ OP TO} ^ 99D 16686 9097250 TOSHIBA <DISCRETE/OPTO> ¿T oj/ììh OOlbbflb D r - 3 9 -/ / TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 52 5 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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T0-220
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.5J1
Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power
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2SC3056,
2SC3056A
2SC3056/2SC3056A
Q01tiS70
9036-f
.5J1
2SC3056A
1S80
2SC3056
high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz
transistor 9036
Q01t
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Untitled
Abstract: No abstract text available
Text: BEE D • aS3b3SQ OOlbbSfl 1 « S I P BCP 69 PNP Silicon AF Transistors SIEMENS/ SPCL-. SEMICONDS r - 3 3 -/? • • • • • For general AF application High colleclor current High collector gain Low collector -emitter saturation voltage Complementary type: BCP 68 NPN
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12-mm
C2130
OT-223
23b350
BCP69
j-33-17
23b320
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KM428C257
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • T'ibM mE OOlbbbE 17Ô « S f l G K PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 5 1 2 x 8 bits SAM port - Performance rang e:
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KM428C257
KM428C257
001b7Ã
40-PIN
40/44-PIN
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Untitled
Abstract: No abstract text available
Text: 32E D • Û 23b350 OOlbbSä b « S I P PNP Silicon Darlington Transistors SIEMENS/ SPCL-, SEMICONDS • • • • BCP 28; BCP 48 T -3 3 - 3 1 _ For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type
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23b350
OT-223
C1235
T-33-31
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HOA2002
Abstract: HOA20
Text: b7E t • 4551830 OOlbSI? IBS « H O N l HOA2002 HONEYIilELL I N C / MICRO Transmissive Optoschmitt Sensor FEATURES • Direct TTL interface • Buffer logic • In-line detector leads • 0.125 in. 3.18 mm slot width • Accurate position sensing DESCRIPTION
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HOA2002
HOA2002
HOA20
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS GEC P L E S S E Y ¡s e m i c o n d u c t o r s 4bE ]> • 37t.flSE2 OOlbSSD 3 « P L S B MARCH 1992 ! PRELIMINARY INFORMATION DS3176 1.3 SP8916 5.0/5.5GHZ + 16 FIXED MODULUS DIVIDER The SP8916 is one of a range of very high speed low
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DS3176
SP8916
SP8916
SP89100
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E.78996
Abstract: 78996 L220A 4525 GE DIODE RK 69 ir e.78996 D183 D184 D185 D186
Text: • International [¡^Rectifier 4Ô5S45B OOlbbSa 712 ■ INR s e r ie s irk.l56, .L71, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules INTERNATIONAL RECTIFIER bSE » Features ■ ■ ■ ■ ■ ■ ■ ■ Fast recovery tim e characteristics Electrically isolated base plate
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Untitled
Abstract: No abstract text available
Text: S G S-THOPISON 07E D | V ^ a a ? OOlbBMû t. I LOW POWER SCHOTTKY T54LS379 T74LS379 INTEGRATED CIRCUITS 67C 16477 D £T — QUAD PARALLEL REGISTER WITH ENABLE DESCRIPTION The T54LS379/T74LS379 is a 4-Bit Register with buffered common Enable* This device is similar to
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T54LS379
T74LS379
T54LS379/T74LS379
T54LS/T74LS175
T74LS379
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rc224atf
Abstract: lt721 Transistor RKU
Text: • 7Ô11Ü73 OOlbVlfl £16 ■ RKüJ RC224ATF « » Rockwell RC224ATF Integrated V.22 bis Data/Fax Modem with “AT” and Class 1 Commands Group 3 Transmit and Receive Functions INTRODUCTION FEATURES • The Rockwell RC224ATF is a combination V.22 bis data
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RC224ATF
RC224ATF
EIA-578
MD51R2-C2
001L737
7S11073
Dlb73fl
lt721
Transistor RKU
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Untitled
Abstract: No abstract text available
Text: TT 3EE D • Ö23b320 OOlbSöl 3 ISIP BB 811 Silicon Tuning Diode SIEMENS/ SPCL-. SEMICONDS _ T—07—16 C a th o d e • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type M arking O rdering code taped Package BB 811 white/T.
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23b320
Q62702-B478
D-123
A23b32G
T-07-16
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Untitled
Abstract: No abstract text available
Text: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz
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23b320
BCW61
BCX71
653b350
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô23b320 OOlbMûb «= H S I P Silicon PIN Diodes SIEMENS/ SPCLi SEMICONDS BAR 60 BAR 61 T - ô l - \S • For RF attenuation • Switching applications for frequencies above 10 MHz TVpe Marking Ordering code tape and reel) Pin configuration Package
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23b320
2702-A
OT-143
23b320
BAR61
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de
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KM44C4000L
KM44C4000L
110ns
KM44C4000L-7
130ns
KM44C4000L-8
KM44C4000L-6
150ns
47fiF
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E D KM48C2000L/LL • 7^4142 OOlbSn b3b H S M ä K CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2000L/LL is a C MOS high speed 2,097,152 b itx S Dynam ic Random Access Memory, it's
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KM48C2000L/LL
KM48C2000L/LL
KM48C2000L/LL-6
110ns
KM48C2000L/LL-7
130ns
KM48C2000ULL-8
150ns
28-LEAD
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 4bE T> m 37bfl522 OOlb'ib? 3 • PLSB GEC PLESSEY MARCH 1992 PRELIMINARY INFORMATION ¡s e m i c o n d u c t o r s ! OS3234 1.1 P10C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM The P10C68 is a fast static RAM 35 and 45 ns with a
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37bfl522
S3234
P10C68
P10C68
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130HF
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER S^E D • 4Ô55452 OOlB'ib? ÔGI « I N R I J v f iz Bulletin 12019 AUG 0 6 yyu in t e r n a t io n a l r e c t i f i e r K > R 100HF R)/130HF(R). SERIES 100/130 Amp Average Medium Power Silicon Rectifier Diodes Features ■ ■
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100HF
/130HF
100HF.
130HF.
100HF/130HF.
130HF
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BZV85
Abstract: c8v2 BB531 c9v1
Text: N AMER PHILIPS/DISCRETE SSE D • bb53T31 OOlbTBI Q ■ BZV85 SERIES A _ T-// -/ 3 VOLTAGE REGULATOR DIODES V - Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended fo r stabilization purposes. The series covers the normalized E24 ± 5% range o f nominal working voltages
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BZV85
DO-41
7Z82194
c8v2
BB531
c9v1
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TA7233P
Abstract: ta7233 12v TRANSISTOR AUDIO AMPLIFIER TA7033 T-74-05-0 Protector IC For Stereo Power Amplifier 1030rg TA7033P
Text: TOSHIBA-, ELECTRONIC □ S 9097247 TO SH IBA. D OOlb^M ELECTRONIC^ 4 |~ 02E 16934 TA7233P T-W'QS-O I TENTATIVE Unit in mm DUAL AUDIO POWER AMPLIFIER. 3dlMAX. The TA7233P is a dual audio power amplifier for consumer applications. It is suitable for power amplifier of portable
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TA7233P
TA7233P
ta7233
12v TRANSISTOR AUDIO AMPLIFIER
TA7033
T-74-05-0
Protector IC For Stereo Power Amplifier
1030rg
TA7033P
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HOA902-11
Abstract: HOA902-12 HOA902 the sensitivity of Optical encoder Sensor Infrared photodiode sensor Optical Encoder Optical Encoder HOA902 Optical tachometer HOA9
Text: NEW PRODUCTS HONEYWELL INC / MICRO Assemblies M1E D 4551030 OOlBöbO T Optical Encoder HOA902 SERIES The HOA9Q2 optical encoder assembly consists of a dual channel 1C sensor, and a GaAs RED (Infrared Emitting Diode mounted in an opaque plastic housing. The sensor is a monolithic 1C,
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HOA902
HOA902-11
HOA902-12
the sensitivity of Optical encoder Sensor
Infrared photodiode sensor
Optical Encoder
Optical Encoder HOA902
Optical tachometer
HOA9
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A45A
Abstract: SO402 2SK386 j2f3 16664
Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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100nA
A45A
SO402
2SK386
j2f3
16664
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