Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ON SEMICONDUCTOR 340G Search Results

    ON SEMICONDUCTOR 340G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR 340G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original
    PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    NTD18N06

    Abstract: BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L
    Text: SGD507/D Rev. 0, Feb-2002 MOS Power Products Selector Guide ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original
    PDF SGD507/D Feb-2002 r14525 NTD18N06 BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L

    carrier chiller

    Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
    Text: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’


    Original
    PDF Sep-2000 r14525 carrier chiller BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original
    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original
    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    transistor MJL21194

    Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
    Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original
    PDF MJL21193 MJL21194 MJL21193* MJL21194* MJL21194 transistor MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193

    MJL21193

    Abstract: MJL21194 transistor MJL21194 transistor mjl21193
    Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original
    PDF MJL21193* MJL21194* MJL21193 MJL21194 r14525 MJL21193/D transistor MJL21194 transistor mjl21193

    MJL21194

    Abstract: transistor MJL21194 MJL21193 NPN 200 VOLTS POWER TRANSISTOR
    Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


    Original
    PDF MJL21193* MJL21194* MJL21193 MJL21194 r14525 MJL21193/D transistor MJL21194 NPN 200 VOLTS POWER TRANSISTOR

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original
    PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original
    PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    Untitled

    Abstract: No abstract text available
    Text: NIB6404-5L Preferred Device Product Preview SMARTDISCRETESt 52 Amps, 40 Volts Self Protected with Temperature Sense N–Channel D2PAK http://onsemi.com SMARTDISCRETES devices are an advanced series of Power MOSFETs which utilize ON Semiconductor’s latest MOSFET


    Original
    PDF NIB6404-5L

    S1095

    Abstract: NTP13N10
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Through−Hole RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* Max Rating Config. Page No. VN2222LL S 1095 0.35 2N7000 S 26 0.35


    Original
    PDF VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L O-220AB NTP125N02R NTP90N02 S1095 NTP13N10

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original
    PDF SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D

    tip1012

    Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
    Text: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching


    Original
    PDF O-220 221D-02) 340G-01) MJF122 MJF127 MJL3281A MJ14002 MJ14003 MJ10021 MJW16018 tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003

    ON semiconductor 340g

    Abstract: 340g
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–3PBL TO–264 CASE 340G–02 ISSUE H DATE 08/08/2000 SCALE 1:2 0.25 (0.010) M T B M –Q– –B– –T– C E U N DIM A B C D E F G H J K L N P Q R U W A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010)


    Original
    PDF

    MJL21195

    Abstract: MJL21196
    Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •


    Original
    PDF MJL21195 MJL21196 MJL21195 MJL21196 r14525 MJL21195/D

    GDH4048ZD3

    Abstract: 100AMP SCR SCR 30A 220V solid state relay 220V GTH6048ZD3 GTH10048ZD3 GDH1048ZA2 GTH6048ZA2 GDH20048ZD3 GDH12048ZD3B
    Text: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Solid State Relays Introduction Semiconductor Device 1- Solid state relays GT 10 to 40 Amps AC SSR The series GT three phase Solid State Relays is used three phase loads. Triac Output. The triac version of the


    Original
    PDF 24VDC 12/24VDC GDH4048ZD3 100AMP SCR SCR 30A 220V solid state relay 220V GTH6048ZD3 GTH10048ZD3 GDH1048ZA2 GTH6048ZA2 GDH20048ZD3 GDH12048ZD3B

    Untitled

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO


    Original
    PDF MJL3281A MJL1302A MJL3281A/D

    MJL21195

    Abstract: MJL21196
    Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •


    Original
    PDF MJL21195 MJL21196 MJL21195 MJL21196 r14525 MJL21195/D

    10000 watts sound amplifier circuit diagram

    Abstract: free home theater 2.1 circuit diagram MJL3281A MJL1302A free home theater circuit diagram MJL1302AG MJL1302A MJL3281A MJL3281AG ON semiconductor 340g NPN 1.5 AMPS POWER TRANSISTOR
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO


    Original
    PDF MJL3281A MJL1302A MJL3281A/D 10000 watts sound amplifier circuit diagram free home theater 2.1 circuit diagram MJL3281A MJL1302A free home theater circuit diagram MJL1302AG MJL1302A MJL3281A MJL3281AG ON semiconductor 340g NPN 1.5 AMPS POWER TRANSISTOR

    MJL4281A

    Abstract: MJL4302AG
    Text: MJL4281A NPN MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Features • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary:


    Original
    PDF MJL4281A MJL4302A MJL4281A MJL4302A MJL4281A/D MJL4302AG

    transistor TL 431 g

    Abstract: S 170 MOSFET TRANSISTOR transistor 667 7A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY20N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Praterrad Devfce N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS RDS<on 3 0-26 OHM This high voltage MOSFET uses an advanced termination


    OCR Scan
    PDF MTY20N50E 0E-05 transistor TL 431 g S 170 MOSFET TRANSISTOR transistor 667 7A

    AN569

    Abstract: MTY25N60E motorola 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY25N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 25 AMPERES 600 VOLTS RDS on “ 0.21 OHM This advanced TM OS power FET is designed to withstand high


    OCR Scan
    PDF MTY25N60E 0E-05 0E-03 AN569 motorola 714

    TY55N20E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY55N 20E TM O S E -F E T ™ P ow er Field E ffe c t T ran sistor M otorola P refe rred D evice N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 55 AMPERES 200 VOLTS RDS on = 0 028 OHM


    OCR Scan
    PDF MTY55N20E TY55N20E