Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power
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MSM5117170
576-Word
16-Bit
MSM5117170
42-pin
50/44-pin
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microwave oven magnetron
Abstract: magnetron 5kw magnetron 1kw magnetron magnetrons Philips permanent magnet DC generator 6 kw power supply for magnetron magnetrons diagram induction heater magnetron 200
Text: PHILIPS WATER COOLED MAGNETRON especially intended for use as a continuous wave power oscillator In industrial generators and in microwave ovens. It operates at a fixed frequency of 2450 ± 25 Mc/s and is capable of delivering an output power of 2 or 2.5 kw depending upon the voltage standing
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IDT72V70210
Abstract: RX15
Text: PRELIMINARY IDT72V70210 3.3 Volt Time Slot Interchange Digital Switch 1,024 x 1,024 FEATURES: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 32 serial input and output streams 1,024 x 1,024 channel non-blocking switching at 2.048 Mb/s Per-channel Variable Delay Mode for low-latency applications
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IDT72V70210
IEEE-1149
DA144-1)
72V70210
drw12
com/docs/PSC4085
com/docs/PSC4062
IDT72V70210
RX15
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diode OF162
Abstract: OF162 IDT72V71643 RX15
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 4,096 x 4,096 • • FEATURES: • • • • • • • • • • • • • • • Up to 32 serial input and output streams Maximum 4,096 x 4,096 channel non-blocking switching Accepts data streams at 2.048 Mb/s, 4.096 Mb/s, 8.192 Mb/s or
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BC144-1)
DA144-1)
72V71643
drw21
diode OF162
OF162
IDT72V71643
RX15
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IDT72V71650
Abstract: TX15
Text: PRELIMINARY IDT72V71650 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 FEATURES: DESCRIPTION: • • The IDT72V71650 has a non-blocking switch capacity of 1,024 x 1,024 channels at 2.048Mb/s, 2,048 x 2,048 channels at 4.096Mb/s, and 4,096 x 4,096 channels at 8.192Mb/s and 8,192 x 8,192 channels at 16.384Mb/s. With
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IDT72V71650
IDT72V71650
048Mb/s,
096Mb/s,
192Mb/s
384Mb/s.
DA144-1)
BB144-1)
TX15
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IDT72V70840
Abstract: RX15
Text: PRELIMINARY IDT72V70840 3.3 Volt Time Slot Interchange Digital Switch 4,096 x 4,096 FEATURES: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 32 serial input and output streams 4,096 x 4,096 channel non-blocking switching at 8.192 Mb/s Accepts data streams at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s
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IDT72V70840
BC144-1)
DA144-1)
72V70840
drw13
com/docs/PSC4085
com/docs/PSC4062
IDT72V70840
RX15
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PDF
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C4815
Abstract: 1776-C629 1776-C105 B 0411 C621 A712900 K800 c481 1776-C68 MG655
Text: Page 2 of 2 Type MG Precision High Voltage Resistors Type MG Precision High Voltage Resistors Type 1776 Precision Decade Resistor Voltage Dividers Type 1776 Precision Decade Resistor Voltage Dividers Type MG Precision High Voltage Resistors Type 1776 Precision
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Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =
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-100V
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0416NA
AP0416WG
AP0416ND
-200V
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OE33
Abstract: bel 188 transistor IDT72V73263
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 16,384 X 16,384 CHANNELS FEATURES: • • • • • • • • • • • • • • • • Up to 64 serial input and output streams Maximum 16,384 x 16,384 channel non-blocking switching
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048Mb/s,
096Mb/s,
192Mb/s,
384Mb/s
768Mb/s
D8-15
drw19
BB208-1)
DR208-1)
OE33
bel 188 transistor
IDT72V73263
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IDT72V70840
Abstract: RX15
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 4,096 x 4,096 FEATURES: • • • • • • • • • • • • • • • 32 serial input and output streams 4,096 x 4,096 channel non-blocking switching at 8.192 Mb/s Accepts data streams at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s
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DA144)
DAG144)
72V70840
drw14
IDT72V70840
RX15
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TA 8903 SN
Abstract: No abstract text available
Text: rMDNT* HEWLETT-PACKARD/ CMPNTS blE D • bit » — 4HH75ÛH 0006=170 =J43 M H P A Thai HEWLETT mLlLMPACKARD Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HPVA-0180 Features Description P la stic SO-8 P a c k a g e • 3 dB Bandw idth: DC to
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4HH75Ã
HPVA-0180
HEDS-9000,
HEDS-9100,
HEDS-9200
HEDS-8903
HEDS-5540
HEDS-5640
HEDS-9040
HEDS-9140
TA 8903 SN
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Untitled
Abstract: No abstract text available
Text: TYPE OF 85°C GLASS CAP - PLASTIC FILM DC FILTER P O W E R FA C T O R vs T EM PER A T U R E 2 % , % ! 60 HZk r -40 AO so ALTITUDE. T ype O F capacitors a re designed fo r operation at barom etric pressures g reater than 20 inches of mercury. Transport non-operating a t 100,000 feet.
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F500-501
OF500-102
OF500-202
OF500-502
OF500-602
0F600-101
OF600
OF600-501
OF600-102
OF600-202
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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OF590
Abstract: No abstract text available
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 ADVANCE INFORMATION IDT72V71660 CONFIDENTIAL FEATURES: DESCRIPTION: • • The IDT72V71660 has a non-blocking switch capacity of 2,048 x 2,048 channels at 2.048 Mb/s, 4,096 x 4,096 channels at 4.096 Mb/s, and 8,192 x
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IDT72V71660
IDT72V71660
inT72V71660
BB208-1)
DR208-1)
72V71660
drw18
OF590
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MSM5116800A
Abstract: No abstract text available
Text: O K I Sem iconductor MSM5 1 1 6 8 0 0 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPT IO N The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power
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MSM5116800A_
152-Word
MSM5116800A
28-pin
cycles/64
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FM8100
Abstract: FM8100-T1
Text: WILLAS FM120-M+ FM840-T1 THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1RECTIFIERS PACKAGE-20V- 200V FM1200-M+ FM8200-T1 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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PACKAGE-20V-
OD-123+
FM84FM120-M
FM1200-M
00-T1
OD-123H
RS-481-A
FM8100
FM8100-T1
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RX28
Abstract: IDT72V70210 RX15
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 1,024 x 1,024 FEATURES: Flatpack TQFP packages Operating Temperature Range -40°°C to +85°°C 3.3V I/O with 5V tolerant inputs and TTL compatible outputs • • • • 32 serial input and output streams 1,024 x 1,024 channel non-blocking switching at 2.048 Mb/s
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BC144-1)
DA144-1)
72V70210
drw12
RX28
IDT72V70210
RX15
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sta401
Abstract: IDT72V71650 TX15
Text: PRELIMINARY IDT72V71650 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 FEATURES: DESCRIPTION: • • The IDT72V71650 has a non-blocking switch capacity of 1,024 x 1,024 channels at 2.048Mb/s, 2,048 x 2,048 channels at 4.096Mb/s, and 4,096 x 4,096 channels at 8.192Mb/s and 8,192 x 8,192 channels at 16.384Mb/s. With
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IDT72V71650
IDT72V71650
048Mb/s,
096Mb/s,
192Mb/s
384Mb/s.
DA144-1)
BB144-1)
sta401
TX15
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dcl1
Abstract: No abstract text available
Text: fÆIK INTNTL MICROELCTN DCL Digital Cell Library IMP’s Digital Cell Library DCL is designed to be compatible with IMP’s Analog Cell Library (ACL). The dual layer metal, silicon gate CMOS Standard Cells offer high performance with low power consumption
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of200
T-42-11-09
dcl1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT72V70840 3.3 Volt Time Slot Interchange Digital Switch 4,096 x 4,096 FEATURES: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 32 serial input and output streams 4,096 x 4,096 channel non-blocking switching at 8.192 Mb/s Accepts data streams at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s
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Original
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IDT72V70840
BC144-1)
DA144-1)
72V70840
drw13
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PDF
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Untitled
Abstract: No abstract text available
Text: E2G0146-18-11 O K I Semiconductor Thlsverslun:M ar1998 M D51V65165_ 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V65165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MD51V65165 achieves high integration, high-speed operation, and low-power
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E2G0146-18-11
TsvrlnM19
D51V65165_
304-Word
16-Bit
MD51V65165
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MSM514400C/CL-60
Abstract: No abstract text available
Text: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is
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MSM514400C/CL_
MSM514400C/CL
576-word
26/20-pin
20-pin
or26/20-pin
MSM514400CL
MSM514400C/CL-60
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PDF
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A72Pq
Abstract: VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265
Text: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3
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FC102
15bis
A72Pq
VARISTOR 275 L20
CORE F5A
FC102
PME261KE6470
747I1330
63D14
1510AH
SMR10105
SMPS 265
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PDF
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MSM51V17100
Abstract: 724540
Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
A0-A11
b724240
724540
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