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    OF PNP TRANSISTOR 2N5401 Search Results

    OF PNP TRANSISTOR 2N5401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    OF PNP TRANSISTOR 2N5401 Price and Stock

    Diotec Semiconductor AG 2N5401

    Bipolar Transistor - TO-92 - 150V - 600mA - PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401 31,210
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    • 1000 -
    • 10000 $0.0198
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    Fairchild Semiconductor Corporation 2N5401BU

    Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 Bulk
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401BU 23,627
    • 1 $1.01
    • 10 $1.01
    • 100 $0.593
    • 1000 $0.13
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    Taitron Components Inc 2N5401

    PNP High Voltage Transistor - 150V - hFE=60-240/10mA - Vse(sat)<=0.5V/50mA - fT>=100MHz in TO-92 PKG.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401 7,946
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    • 1000 $0.0468
    • 10000 $0.0401
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    Rectron Semiconductor 2N5401

    Transistor, Power Rating - 0.625W, Polarity - PNP, DC Collector/Base Gain hfe Min - 60, DC Current Gain hFE Max - 300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401
    • 1 -
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    • 1000 $0.0577
    • 10000 $0.0435
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    OF PNP TRANSISTOR 2N5401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    transistor 2N5401

    Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA


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    PDF M3D186 2N5401 2N5551. MAM280 SCA76 R75/04/pp6 transistor 2N5401 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401

    2N5401

    Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA


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    PDF M3D186 2N5401 2N5551. MAM280 SCA63 115002/00/03/pp8 2N5401 transistor 2N5401 diodes inc 2N5551 2N5551 BP317

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: CMLT5554 SURFACE MOUNT SILICON DUAL, COMPLEMENTARY HIGH VOLTAGE TRANSISTOR w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


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    PDF CMLT5554 2N5551 2N5401 OT-563 100MHz 12-February

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF 70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    transistor 2N5401

    Abstract: 2N5401 2N5551 CMLT5554
    Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


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    PDF CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554

    Untitled

    Abstract: No abstract text available
    Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process


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    PDF CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January

    diode 2N5401

    Abstract: 2N5401 2n5401 148
    Text: DC COMPONENTS CO., LTD. 2N5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ


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    PDF 2N5401 -10mA, -50mA, 100MHz diode 2N5401 2N5401 2n5401 148

    2N5401

    Abstract: No abstract text available
    Text: 2N5401 PNP Transistor Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.5±0.2 4.55±0.2 FEATURES Power Dissipation o 14.3 ±0.2 PCM : 0.625 W Tamb=25 C Collector current


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    PDF 2N5401 -10mA 30MHz 01-Jun-2002 2N5401

    2N5401

    Abstract: transistor 2N5401
    Text: 2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G Switching and amplification in high voltage H Applications such as telephony J Low current max. 600mA


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    PDF 2N5401 600mA) -50mA -50mA, 4-Feb-2010 -10mA, 30MHz 2N5401 transistor 2N5401

    C2N5401

    Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L „ ORDERING INFORMATION Order Number


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    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-F-R 2N5401L-x-AB3-F-R 2N5401-x-T92-C-B 2N5401L-x-T92-C-B 2N5401-x-T92-C-K 2N5401L-x-T92-C-K C2N5401 2N5401 transistor 2N5401 of pnp transistor 2n5401

    2N5401L-x-T92-B

    Abstract: 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R


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    PDF 2N5401 OT-89 -150V 2N5401L-x-AB3-R 2N5401G-x-AB3-R 2N5401L-x-T92-B 2N5401G-x-T92-B 2N5401L-x-T92-K 2N5401G-x-T92-K 2N5401L-x-T92-R 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain,  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N5401L-x-AB3-R


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    PDF 2N5401 -150V 2N5401L-x-AB3-R 2N5401G-x-AB3-R OT-89 2N5401L-x-T92-B 2N5401G-x-T92-B 2N5401L-x-T92-K 2N5401G-x-T92-K 2N5401L-x-T92-A-B

    2N5401L

    Abstract: of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 1 * Collector-emitter voltage: VCEO = -150V *Total Power Dissipation: PD MAX =1W * High current gain SOT-89 *Pb-free plating product number:2N5401L


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    PDF 2N5401 -150V OT-89 2N5401L 2N5401-AB3-R 2N5401L-AB3-R OT-89 QW-R208-040 2N5401L of pnp transistor 2n5401

    transistor 2n5401

    Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


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    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


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    PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K

    2n5401 equivalent

    Abstract: transistor equivalent of 2N5401 transistor equivalent for 2N5401
    Text: SENSITRON SEMICONDUCTOR SHD431008 TECHNICAL DATA DATA SHEET 2040,REV. - SMALL SIGNAL TRANSISTOR - PNP Electrically Equivalent to 2N5401 DESCRIPTION: A SINGLE PNP SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


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    PDF SHD431008 2N5401) 2n5401 equivalent transistor equivalent of 2N5401 transistor equivalent for 2N5401

    mark 2L SOT-23

    Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6

    2n5401y

    Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5401 MMBT5401 2N5401 OT-23 2N5401YBU 2N5401RM 2N5401CH1TA 2n5401y 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 5401 GM

    str g 5551

    Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401


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    PDF 2N5401 2N5401 115002/00/03/pp8 str g 5551 str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551

    2n2222 2n5401 2n5551

    Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.


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    PDF 14-pin 2N2222 2N2907 TPQ6600 2N2483 2N3738 TPQ6600A 2N3799 TPQ6700 2N3904 2n2222 2n5401 2n5551 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222

    transistor cc 5551

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • G eneral purpose sw itching and am plification


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    PDF 2N5401 SC-43 transistor cc 5551