OF GAAS MESFET AMPLIFIER Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

Contextual Info: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This amplifier is internally matched with typical VSWR of

AG101

Contextual Info: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: AG101 power amplifier mmic
Contextual Info: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

Contextual Info: RFMD. RFPP2870—Ultra-Linear GaN-Based Push-Pull Amplifier The RFMD RFPP2870 GaN-based, differential, push-pull amplifier features a high gain—28dB—and the highest level of linearity available. This hybrid is designed to enhance CATV access networks. It employs GaAs MESFET, GaAs

AH101

Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Contextual Info: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: c 596 AG101 AH11 AH22 AH1-1
Contextual Info: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

30349

Abstract: 136423
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output

Contextual Info: AM132740MM-BM-R AM132740MM-FM-R GaAs MMIC Power Amplifier Aug 2010 Rev 2 DESCRIPTION AMCOM’s AM132740MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.3 to

Contextual Info: AM132740MM-BM-R November 2007 Rev 0 DESCRIPTION AMCOM’s AM132740MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.3 to

SOT115J

Abstract: RFPP2870 SOT-115J
Contextual Info: RFMD . RFPP2870—Ultra-Linear GaN-Based Push-Pull Amplifier The RFMD® RFPP2870 GaN-based, differential, push-pull amplifier features a high gain—28dB—and the highest level of linearity available. This hybrid is designed to enhance CATV access networks. It employs GaAs MESFET, GaAs

Contextual Info: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.

Contextual Info: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to

WJ Communications, AH1

Abstract: ah1 fet mmic ah1 linear MTBF WJ 59
Contextual Info: The Communications Edge TM Application Note Product Information AH1 Temperature Effects on Reliability AH2 and AH3 Included by Similarity The AH1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s product for more than 15 years. Extensive life testing and field history of our GaAs products have demonstrated

Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS  SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24

ATF54143.s2p

Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Contextual Info: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency

Contextual Info: AM142540MM-BM-R AM142540MM-FM-R December 2008 Rev 7 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.

Contextual Info: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET

S5100

Abstract: X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag
Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24 23 GND VID

08GHz

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

3SK189

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

296K

Abstract: GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET
Contextual Info: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1800: Dec 04, 2002 Smart IC Maintains Uniform Bias Current For GaAs MESFETs A current sensor that monitors the drain-source current IDS at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gateturn-on threshold voltage variations for gallium-arsenide metal-semiconductor fieldeffect transistors, GaAs MESFETs.

NE900474-13

Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Contextual Info: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001

Contextual Info: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual