PEMD18
Abstract: No abstract text available
Text: Small, efficient, and robust solutions for digital still cameras NXP discretes for power management, interface, and general-purpose applications NXP discretes for digital still cameras Digital still cameras DSCs are demanding designs. They are portable, battery-powered systems, so they require
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SC-101
OT886
OT891
PEMD18
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prtr5v0u6s
Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years
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2002/95/EC.
PMBTA42
PMEG3005EL
PMEG6010EP
PMR780SN
PTVS12VS1UR
PZU13y
PMBTA42DS
PMEG3005ET
PMEG6010ER
prtr5v0u6s
csp1040
TSSOP20 FOOTPRINT
ip4065cx11
smd transistor GY sot89
IP4065CX11/LF
BV 9y transistor smd
IP4058CX8/LF
IP4280CZ10
smd transistor GY
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Untitled
Abstract: No abstract text available
Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and
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JESD204A
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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NX3008NBKMB
Abstract: IP4303CX4 PCMF2DFN1
Text: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL
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PESD18VF1BL
PESD24VF1BL
PESD18VF1BSF
PESD24VF1BSF
DFN1006
DSN0603
DFN2520
DFN4020
NX3008NBKMB
IP4303CX4
PCMF2DFN1
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BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
OT883
PHT8N06LT
BSP030
PMN50XP
PMN55LN
PMN34LN
BSH103
BSS138 NXP
FDC642P
2n7002 nxp
AO3401
BSS123 NXP
BSH103
IRLL014N
PMV65XP
BSH108
BSP250
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2N7002
Abstract: No abstract text available
Text: SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Trench MOSFET technology. 1.2 Features and benefits
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2N7002
2N7002
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Untitled
Abstract: No abstract text available
Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKMB
DFN1006B-3
OT883B)
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Untitled
Abstract: No abstract text available
Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKMB
DFN1006B-3
OT883B)
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2N7002BK
Abstract: 771-2N7002BK215 trench relay
Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002BK
O-236AB)
AEC-Q101
771-2N7002BK215
2N7002BK
trench relay
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2N7002PT
Abstract: No abstract text available
Text: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002PT
OT416
SC-75)
AEC-Q101
771-2N7002PT-115
2N7002PT
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smd transistor marking zg
Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115
Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKV
OT666
AEC-Q101
smd transistor marking zg
transistor smd zG
TRANSISTOR SMD MARKING zg
2n7002bkv
NXP SMD mosfet MARKING CODE
NXP SMD TRANSISTOR MARKING CODE s1
2N7002BKV/DG/B2115
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TRANSISTOR SMD MARKING zg
Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKV
OT666
AEC-Q101
771-2N7002BKV115
2N7002BKV
TRANSISTOR SMD MARKING zg
transistor smd zG
TRANSISTOR SMD MARKING CODE zg
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2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
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2012051
Abstract: NXP SMD mosfet MARKING CODE 2n7002bk
Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKMB
DFN1006B-3
OT883B)
2012051
NXP SMD mosfet MARKING CODE
2n7002bk
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2N7002 NXP MARKING
Abstract: 2N7002 2N7002 NXP nxp 2n7002 sot23 nxp 2n7002 marking nxp 2N7002
Text: SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Trench MOSFET technology. 1.2 Features and benefits
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2N7002
771-2N7002-T/R
2N7002
2N7002 NXP MARKING
2N7002 NXP
nxp 2n7002 sot23
nxp 2n7002
marking nxp 2N7002
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smd code marking WV
Abstract: nxp p mosfet 2N7002P
Text: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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2N7002P
O-236AB)
AEC-Q101
2N7002P
smd code marking WV
nxp p mosfet
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2N7002BKS
Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKS
OT363
SC-88)
AEC-Q101
2N7002BKS
dual sot363
g1 TRANSISTOR SMD MARKING CODE
MOSFET TRANSISTOR SMD MARKING CODE A1
smd transistor marking zt
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Untitled
Abstract: No abstract text available
Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PS
OT363
SC-88)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKS
OT363
SC-88)
AEC-Q101
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smd transistor marking z8
Abstract: 771-2N7002BKM315
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
771-2N7002BKM315
2N7002BKM
smd transistor marking z8
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2N7002BKT
Abstract: marking code Z3
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
771-2N7002BKT115
2N7002BKT
marking code Z3
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2N7002PT
Abstract: nxp marking code Z1 SC-75 marking code BV SMD Transistor transistor smd code marking nc
Text: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002PT
OT416
SC-75)
AEC-Q101
2N7002PT
nxp marking code Z1
SC-75
marking code BV SMD Transistor
transistor smd code marking nc
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2N7002PW
Abstract: No abstract text available
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
50itions
771-2N7002PW-115
2N7002PW
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