NX6301SJ Search Results

A1310

Abstract: NX6301 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: PRELIMINARY DATASHEET 1310 nm FOR 156 Mb/s, 622 Mb/s NX6301 InGaAsP MQW-DFB LASER DIODE SERIES IN CAN PACKAGE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR:

NX6301

Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,

NX6301

Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: NEC's 1310 nm InGaAsP MQW DFB NX6301 LASER DIODE IN CAN PACKAGE SERIES FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR: 40 dB

Contextual Info: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series

NX6301

Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid