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    NVD5867NLT4G Price and Stock

    onsemi NVD5867NLT4G

    MOSFET N-CH 60V 6A/22A DPAK-3
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    RS NVD5867NLT4G Bulk 25
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    Bristol Electronics NVD5867NLT4G 1,266
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    Rochester Electronics NVD5867NLT4G 145,419 1
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    Win Source Electronics NVD5867NLT4G 21,400
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    onsemi NVD5867NLT4G-TB01

    MOSFET N-CH 60V 6A/22A DPAK-3
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    NVD5867NLT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVD5867NLT4G On Semiconductor NVD5867 - TRANSISTOR 6 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3, FET General Purpose Power Original PDF
    NVD5867NLT4G-TB01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 22A DPAK DPAK Original PDF

    NVD5867NLT4G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NVD5867

    Abstract: NVD5867NLT4G 67LG 051BSC
    Text: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NVD5867NL AEC-Q101 NVD5867NL/D NVD5867 NVD5867NLT4G 67LG 051BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NVD5867NL NVD5867NL/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NVD5867NL NVD5867NL/D PDF