NVD4 Search Results
NVD4 Price and Stock
onsemi NVD4C05NT4GMOSFET N-CH 30V DPAK-3 |
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NVD4C05NT4G | Cut Tape | 1,327 | 1 |
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NVD4C05NT4G | Reel | 111 Weeks | 2,500 |
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NVD4C05NT4G | 800 |
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NVD4C05NT4G | 16,395 | 314 |
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NVD4C05NT4G | Bulk | 2,500 |
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NVD4C05NT4G | 16,395 | 1 |
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NVD4C05NT4G | 22 Weeks | 2,500 |
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NVD4C05NT4G | 23 Weeks | 2,500 |
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onsemi NVD4810NT4GMOSFET N-CH 30V 9A/54A DPAK |
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NVD4810NT4G | 8 | 1 |
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onsemi NVD4804NT4GMOSFET N-CH 30V 14.5A/124A DPAK |
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NVD4804NT4G | Reel |
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NVD4804NT4G | 12,500 | 474 |
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NVD4804NT4G | 25 |
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NVD4804NT4G | 12,500 | 1 |
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Rochester Electronics LLC NVD4804NT4GMOSFET N-CH 30V 14.5A/124A DPAK |
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NVD4804NT4G | Bulk | 455 |
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onsemi NVD4808NT4GMOSFET N-CH 30V 10A/63A DPAK |
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NVD4808NT4G | 24,748 | 1,246 |
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NVD4808NT4G | 24,748 | 1 |
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NVD4808NT4G | 143 Weeks | 2,500 |
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NVD4 Datasheets (20)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NVD-4 | Electronic Devices | DIODE FAST RECOVERY RECTIFIER 1200V 0.005A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD-4 | Electronic Devices | Rectifier Diodes and Arrays | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4804NT4G |
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NTD4804N - Power MOSFET 30V 117A 4 mOhm Single N-Channel DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4804NT4G |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4804NT4G-VF01 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 14A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4805NT4G |
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NVD4805 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4806NT4G |
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NVD4806N - Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4806NT4G-VF01 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 76A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4808NT4G |
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NVD4808 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4809NHT4G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 58A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4809NT4G |
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NVD4809N - Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4810NT4G |
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NVD4810 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4810NT4G-TB01 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4810NT4G-VF01 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NVD4813NHT4G |
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NVD4813NH - Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4815NT4G |
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NVD4815N - Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4856NT4G |
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NVD4856 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4856NT4G-VF01 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 89A DPAK | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4C05NT4G | onsemi | MOSFET N-CH 30V DPAK-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVD4C05NT4G | onsemi | MOSFET N-CH 30V DPAK-3 | Original |
NVD4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N |
Original |
NTD4806N, NVD4806N NTD4806N/D | |
4813NH
Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
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NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet | |
PPAP
Abstract: 4810N
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Original |
NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N | |
Contextual Info: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N |
Original |
NTD4810N, NVD4810N NTD4810N/D | |
4806n
Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
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NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad | |
4856ng
Abstract: NTD4856NT4G
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NTD4856N, NVD4856N AEC-Q101 NTD4856N/D 4856ng NTD4856NT4G | |
56NG mosfetContextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses |
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NTD4856N, NVD4856N NTD4856N/D 56NG mosfet | |
Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant |
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NTD4809N, NVD4809N NTD4809N/D | |
Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant |
Original |
NTD4804N, NVD4804N NTD4804N/D | |
369AAContextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N |
Original |
NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA | |
Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH |
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NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D | |
Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N |
Original |
NTD4805N, NVD4805N AEC-Q101 NTD4805N/D | |
Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses |
Original |
NTD4856N, NVD4856N NTD4856N/D | |
Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4808N, NVD4808N NTD4808N/D | |
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Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH |
Original |
NTD4813NH, NVD4813NH NTD4813NH/D | |
Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N |
Original |
NTD4805N, NVD4805N NTD4805N/D | |
Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4808N, NVD4808N NTD4808N/D | |
NVD4808NContextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4808N, NVD4808N AEC-Q101 NTD4808N/D | |
Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4813NH, NVD4813NH NTD4813NH/D | |
Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH |
Original |
NTD4809NH, NVD4809NH NTD4809NH/D | |
Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4805N, NVD4805N NTD4805N/D | |
Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring |
Original |
NTD4815N, NVD4815N NTD4815N/D | |
48 04NG
Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
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Original |
NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4 | |
4815NG
Abstract: NTD4815N
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Original |
NTD4815N, NVD4815N AEC-Q101 NTD4815N/D 4815NG NTD4815N |