mosfet 4936n
Abstract: No abstract text available
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance
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NTMFS4936N
NTMFS4936N/D
mosfet 4936n
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mosfet 4936n
Abstract: 4936N
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • • Minimize Conduction, Driver and Switching Losses Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance
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NTMFS4936N
NTMFS4936N/D
mosfet 4936n
4936N
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mosfet 4936n
Abstract: mosfet+4936n
Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft
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NTMFS4936N,
NTMFS4936NC
NTMFS4936N/D
mosfet 4936n
mosfet+4936n
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Untitled
Abstract: No abstract text available
Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft
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NTMFS4936N,
NTMFS4936NC
NTMFS4936N/D
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4936N
Abstract: mosfet 4936n 92pF NTMFS4936NT1G NTMFS4936NT3G
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NTMFS4936N
NTMFS4936N/D
4936N
mosfet 4936n
92pF
NTMFS4936NT1G
NTMFS4936NT3G
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4936N
Abstract: mosfet 4936n NTMFS4936NT1G NTMFS4936NT3G microdot NTMFS4936N
Text: NTMFS4936N Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to • Minimize Conduction, Driver and Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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Original
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PDF
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NTMFS4936N
NTMFS4936N/D
4936N
mosfet 4936n
NTMFS4936NT1G
NTMFS4936NT3G
microdot
NTMFS4936N
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Untitled
Abstract: No abstract text available
Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft
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Original
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PDF
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NTMFS4936N,
NTMFS4936NC
NTMFS4936N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4936N, NTMFS4936NC Power MOSFET 30 V, 79 A, Single N−Channel, SO−8 FL Features • Low RDS on , Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses http://onsemi.com • Next Generation Enhanced Body Diode, Engineered for Soft
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Original
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PDF
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NTMFS4936N,
NTMFS4936NC
NTMFS4936N/D
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