NTE34 Search Results

NTE342

Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

NTE347

Contextual Info: NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz. Features: D Low lead inductance stripline package for easier design and increased broadband capability.

NTE342

Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

NTE349

Contextual Info: NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large–signal amplifier applications required in military and industrial equipment to 240MHz.

NTE346

Abstract: npn 1W 40V to39
Contextual Info: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver

NTE341

Contextual Info: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead

Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

NTE344

Contextual Info: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

NTE343

Contextual Info: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)

NTE3470

Abstract: MAGNETIC HEAD
Contextual Info: NTE3470 Integrated Circuit Floppy Disk Read Amplifier System Description: The NTE3470 is a monolithic READ Amplifier System for obtaining digital information from floppy disk storage. It is designed to accept the differential AC signal produced by the magnetic head and produce a digital output pulse that corresponds to each peak of the input signal. The gain stage amplifies

Contextual Info: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver

nte340

Contextual Info: NTE340 Silicon NPN Transistor RF Power Output, High Frequency Features: D High Transition Frequency D Output of 0.6W can be obtained in the VHF Band f = 175MHz . Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

NTE345

Abstract: 136v
Contextual Info: NTE345 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.

1905

Abstract: NTE348
Contextual Info: NTE348 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in military and industrial equipment to

NTE36

Abstract: NTE45 nte33 NTE34 nte157
Contextual Info: N T E ELECTRONICS INC SEE D • bMaiSSI 0002513 bOb « N T E T - Z ^ O f Maximum Breakdown! Voltage NTE TVP» Number Polarity and Material Description and Application Casa Style Diag. No. Maximum Collector Power Dissipation Watts Maximum Collector Current

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

NTE34

Abstract: 2039P nte33 nte50 nte157
Contextual Info: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160

Contextual Info: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7

NTE4256

Contextual Info: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1