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    NTB6412ANT4G Price and Stock

    Rochester Electronics LLC NTB6412ANT4G

    MOSFET N-CH 100V 58A D2PAK
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    DigiKey NTB6412ANT4G Bulk 216
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    onsemi NTB6412ANT4G

    MOSFET N-CH 100V 58A D2PAK
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    DigiKey () NTB6412ANT4G Digi-Reel 1
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    Verical NTB6412ANT4G 2,369 224
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    Rochester Electronics NTB6412ANT4G 2,369 1
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    NTB6412ANT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTB6412ANT4G
    		On Semiconductor NTB6412 - TRANSISTOR 58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3, FET General Purpose Power Original PDF

    NTB6412ANT4G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6412ANG

    Abstract: NTB 6412 ntb6412ant4g NTP6412ANG NTB6412ANG NTB6412AN
    Contextual Info: NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features • • • • Low RDS on High Current Capability 100% Avalanche Tested These are Pb−Free Devices http://onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)


    Original     		NTB6412AN, NTP6412AN NTB6412AN/D 6412ANG NTB 6412 ntb6412ant4g NTP6412ANG NTB6412ANG NTB6412AN PDF

    6412ANG

    Abstract: 6412AN NTB6412ANG NTB6412ANT4G
    Contextual Info: NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		NTB6412AN, NTP6412AN, NVB6412AN AEC-Q101 10licable NTB6412AN/D 6412ANG 6412AN NTB6412ANG NTB6412ANT4G PDF

    NTB6412AN

    Contextual Info: NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		NTB6412AN, NTP6412AN, NVB6412AN NTB6412AN/D NTB6412AN PDF