2950
Abstract: NSF40505 NSF40604 NSF406045 NSF40708 NSF40709 NSF40808 NSF40911 NSF40913 NSF41011
Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 • • • -DS on Id AMPS @0.5 ID OHMS Qg Q ss nc Pf Pd WATTS 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911 900 12.0 1.1 123
|
OCR Scan
|
O-258
O-258
NSF41013
NSF41011
NSF40913
NSF40911
NSG40809
NSF40808
NSF40709
NSF40708
2950
NSF40505
NSF40604
NSF406045
|
PDF
|
NSF40505
Abstract: NSF40604 NSF406045 NSF40708 NSF40709 NSF40808 NSF40911 NSF40913 NSF41011 NSF41013
Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 DEVICE TYPE VDSS VOLTS I*DS on @0.5 ID Id AMPS OHMS Qg nc Qss Pf Pd WATTS NSF41013 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911
|
OCR Scan
|
O-258
O-258
NSF41013
NSF41011
NSF40913
NSF40911
NSG40809
NSF40808
NSF40709
NSF40708
NSF40505
NSF40604
NSF406045
|
PDF
|
CP666
Abstract: CP640 TO-213AA CP664
Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100
|
Original
|
O-213AA/66
CP666
CP640
TO-213AA
CP664
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N E W ENGLAND SEMICONDUCTOR POW ER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 • • • 34 Qg AMPS ^DS on @0.5 ID OHMS nc Q ss pf Pd WATTS 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911 900 12.0 1.1 123
|
OCR Scan
|
O-258
NSF41013
NSF41011
NSF40913
NSF40911
NSG40809
NSF40808
NSF40709
NSF40708
NSF406045
|
PDF
|