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    NS 106 Price and Stock

    Pentair Equipment Protection - Hoffman MSNS1064

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    DigiKey MSNS1064 Bulk 1
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    Pentair Equipment Protection - Hoffman MSNS1065

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    DigiKey MSNS1065 Bulk 1
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    Sullins Connector Solutions ECC06DRTN-S1061

    CONN EDGE DUAL FMALE 12POS 0.100
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    DigiKey ECC06DRTN-S1061 Tray 10
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    Kyocera AVX Components TCNS106M025R0350E

    Cap Tant Polymer 10uF 25V S CASE 20% SMD 1206 350m Ohm 105?C T/R (Alt: TCNS106M025R0350E)
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    Avnet Americas TCNS106M025R0350E 2,500
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    Kyocera AVX Components TCNS106M025R0350

    Tantalum Polymer Capacitor, 10 uF, 25 V, ? 20%, S, 350 mohm, 1206 [3216-12 Metric] (Alt: TCNS106M025R0350)
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    Avnet Americas TCNS106M025R0350 2,500
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    Find more NS 106 price and stock on Findchips.com

    NS 106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V73CAG01808RA HIGH PERFORMANCE 1Gbit DDR3 SDRAM 8 BANKS X 16Mbit X 8 - - - - I9 DDR3-1066 DDR3-1333 2.5 ns 2.5 ns Clock Cycle Time tCK7, CWL=6 1.875 ns 1.875 ns Clock Cycle Time ( tCK8, CWL=6 ) 1.875 ns 1.875 ns Clock Cycle Time ( tCK9, CWL=7 ) - 1.5 ns


    Original     		PDF V73CAG01808RA 16Mbit DDR3-1066 tCK10, DDR3-1333 78-ball 1333Mbps/1066Mbps

    16v8

    Abstract: 16v8 programming 16v8 spec palce16v8 programming guide PALCE16V8 PALCE16V8-10 PALCE16V8-15 PALCE16V8-25 PALCE16V8-5 PALCE16V8-7
    Text: 16V8 PALCE16V8 Flash Erasable, Reprogrammable CMOS PAL Device Features • Up to 16 input terms and 8 outputs • 7.5 ns com’l version 5 ns tCO 5 ns tS 7.5 ns tPD 125-MHz state machine • 10 ns military/industrial versions 7 ns tCO 10 ns tS 10 ns tPD


    Original     		PDF PALCE16V8 125-MHz 62-MHz 16V8L) PALCE16V8 16v8 16v8 programming 16v8 spec palce16v8 programming guide PALCE16V8-10 PALCE16V8-15 PALCE16V8-25 PALCE16V8-5 PALCE16V8-7

    12L10

    Abstract: 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000
    Text: PLDC20G10B PLDC20G10 USE ULTRA37000 FOR ALL NEW DESIGNS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns


    Original     		PDF PLDC20G10B PLDC20G10 ULTRA37000TM 24-Pin 20L10, 12L10, PLDC20G10B/PLDC20G10 12L10 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000

    20G10-25

    Abstract: 20G10B-15 20G10B-20 Ultra37000TM 12L10 16L6 20L10 20L8 PLDC20G10 PLDC20G10B
    Text: PLDC20G10B PLDC20G10 USE ULTRA37000 FOR ALL NEW DESIGNS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns


    Original     		PDF PLDC20G10B PLDC20G10 ULTRA37000TM 24-Pin 20L10, 12L10, PLDC20G10B/PLDC20G10 20G10-25 20G10B-15 20G10B-20 12L10 16L6 20L10 20L8 PLDC20G10 PLDC20G10B

    78F0948

    Abstract: t p04 78009 NP-100 uPC393 IE-78K0-NS-A uPD780948 ID78K0-NS nec FPGA
    Text: Preliminary User’s Manual IE-78K0-NS-P04 IE-780948-NS-EM4 Emulation Board and Probe Board for IE-78K0-NS-A Target device µPD780948 Subseries Document No. U14515EE1V0UM00 Date Published November 1999 NEC Corporation 1999 IE-78K0-NS-P04, IE-780948-NS-EM4


    Original     		PDF IE-78K0-NS-P04 IE-780948-NS-EM4 IE-78K0-NS-A PD780948 U14515EE1V0UM00 IE-78K0-NS-P04, stati8-6130 78F0948 t p04 78009 NP-100 uPC393 IE-78K0-NS-A uPD780948 ID78K0-NS nec FPGA

    stepper motor em 318

    Abstract: IE-780828-NS-EM4 780828 uPC393 ID78K0-NS IE-78K0-NS-A uPD780828B uPD78009 P90 MOSFET EM 319 stepper motor
    Text: Preliminary User’s Manual IE-78K0-NS-P04 IE-780828-NS-EM4 Emulation Board and Probe Board for IE-78K0-NS-A Target device µPD780828B A Subseries Document No. U14502EE2V0UM00 Date Published June 2000 NEC Corporation 2000 IE-78K0-NS-P04, IE-780828-NS-EM4


    Original     		PDF IE-78K0-NS-P04 IE-780828-NS-EM4 IE-78K0-NS-A PD780828B U14502EE2V0UM00 IE-78K0-NS-P04, stati8-6130 stepper motor em 318 IE-780828-NS-EM4 780828 uPC393 ID78K0-NS IE-78K0-NS-A uPD780828B uPD78009 P90 MOSFET EM 319 stepper motor

    uPD780816

    Abstract: 78009 uPC393 ID78K0-NS IE-78K0-NS-A
    Text: Preliminary User’s Manual IE-78K0-NS-P04 IE-780818-NS-EM4 Emulation Board and Probe Board for IE-78K0-NS-A Target device µPD780816 A Subseries Document No. U14514EE2V0UM00 Date Published December 2000 NEC Corporation 2000 IE-78K0-NS-P04, IE-780818-NS-EM4


    Original     		PDF IE-78K0-NS-P04 IE-780818-NS-EM4 IE-78K0-NS-A PD780816 U14514EE2V0UM00 IE-78K0-NS-P04, st8-6130 uPD780816 78009 uPC393 ID78K0-NS IE-78K0-NS-A

    Untitled

    Abstract: No abstract text available
    Text: 15$5. &! 15$5. &!$ 128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 12 ns • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data


    Original     		PDF 100-Pin 119-pin IS61SF12832 IS61SF12836 IS61SF12836-12TQ IS61SF12836-12B IS61SF12836-8TQI IS61SF12836-8 IS61SF12836-10TQI IS61SF12836-12TQI

    78009

    Abstract: uPC393 ID78K0-NS IE-78K0-NS-A
    Text: Preliminary User’s Manual IE-78K0-NS-P04 IE-1615-NS-EM4 Emulation Board and Probe Board for IE-78K0-NS-A Target device µPD1615A Subseries Document No. U14617EE2V0UM00 Date Published January 2001 NEC Corporation 2001 IE-78K0-NS-P04, IE-1615-NS-EM4 This equipment complies with the EMC protection requirements.


    Original     		PDF IE-78K0-NS-P04 IE-1615-NS-EM4 IE-78K0-NS-A PD1615A U14617EE2V0UM00 IE-78K0-NS-P04, elec8-6130 78009 uPC393 ID78K0-NS IE-78K0-NS-A

    SSR001

    Abstract: No abstract text available
    Text: IS61C632A IS61C632A 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Fast access time: – 4 ns-125 MHZ; 5 ns-100 MHz; 6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61C632A ns-125 ns-100 ns-83 ns-75 ns-66 100-Pin IS61C632A-6TQI IS61C632A-6PQI SSR001

    palce16V8 programming

    Abstract: palce16v8 programming guide palce16v
    Text: PALCE16V8 Flash-Erasable Reprogrammable CMOS PAL Device Features • Up to 16 input terms and eight outputs • 7.5 ns com’l version 5 ns tCO 5 ns tS 7.5 ns tPD 125-MHz state machine • Active pull-up on data input pins • Low power version 16V8L — 55 mA max. commercial (10, 15, 25 ns)


    Original     		PDF PALCE16V8 16V8L) 125-MHz PALCE16V8 Ultra37000 palce16V8 programming palce16v8 programming guide palce16v

    24PIN

    Abstract: CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001
    Text: - 106 2 5 6 K m t, tt £ ïSKiÊSl CC X TAAC max ns) TCAC max (ns) CMOS 4 7 TOE max (ns) TOH (ns) / f TOD max (ns) S t a t i c RAM (2 6 2 14 4 x 1 ) 7' i l t t TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) ma ÏÏI3X (ns i V D D or V C C (V) 2 4 P I N


    OCR Scan     		PDF 24PIN CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-5 HM6207HP-35 HM0207HP-45 HM6707JP-20 HM6707 JP-25 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C16125H HIGH PERFORMANCE 128K X 16 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 PRELIMINARY 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, tPC 23 ns 25 ns 28 ns 40 ns Min. Read/Write Cycle Time, (tRC)


    OCR Scan     		PDF V53C16125H 16-bit

    Untitled

    Abstract: No abstract text available
    Text: TM4SK64KPU 4194304 BY 64-BIT TM8SK64KPU 8388608 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES - SODIMM _SMMS691A-AUGUST 1997 - REVISED NOVEMBER 1997 10 *CK3 10 ns *CK2 10 ns <AC3 7.5 ns *AC2 9 ns 12 12 ns 12 ns 8 ns 9.5 ns • • •


    OCR Scan     		PDF TM4SK64KPU 64-BIT TM8SK64KPU SMMS691A-AUGUST TM4SK64KPU TM8SK64KPU 66-MHz 144-Pin

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V /TE LiC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 Max. RAS Access Time, tHAC HIGH PERFORMANCE V52C812B 70 ns 80 ns 100 ns Max. CAS Access Time, Ocac ) 20 ns 25 ns 25 ns Max. Column Address Access Time, (t*) 35 ns


    OCR Scan     		PDF V52C8128 V52C812B

    TS27C256Q-25

    Abstract: IMS27C256 TC57256D-25 TM57256AD-12 TM57256AD-120 TM57256AD-150 TM57H256D-70 TM57H256D-85 TMS27C256-1 TS27C256CQ-15
    Text: - 10627C256 X -i -, m í± £ % TAAC max ns TCAC max (ns) —85 250 250 70 * ^ TOH max (ns) y f t tt A M h VIH min (V) tu ji/m î ï s V O H / 1 VOH min (V/mA) Co max (pF) (ns) TOD tax (ns) 100 90 4. 7 5 - 5 . 25 30/1 0.8 2.1) 6 1). 4/2.1 2. 4/0. 4 12 5


    OCR Scan     		PDF TC57256D-25 TM57H256D-70 TM57H256D-85 TM57256AD-12 TM57256AD-120 TM572. UPD27C256AC-20 uPD27C256AD-12 UPD27C25BAD-15 28PIN TS27C256Q-25 IMS27C256 TM57256AD-150 TMS27C256-1 TS27C256CQ-15

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VI TEL IC V35644Q15KG 5.0 VOLT 4M x 64 HIGH PERFORMANCE UNBUFFERED DIMM MODULE HIGH PERFORMANCE 50 60 Max. RAS Access Tim e, tpj^c 50 ns 60 ns Max. CAS Access Tim e, (tcAc) 13 ns 15 ns Min. Cycle Time, (tpc) 84 ns 104 ns Min. EDO Mode Cycle Time, (tpc)


    OCR Scan     		PDF V35644Q15KG cycles/32 168ance) V35644Q15KG

    Untitled

    Abstract: No abstract text available
    Text: PLDC20G10B/PLDC20G10 V CYPRESS Features • Fast — Commercial: tpjj = 15 ns, tc o = ns, t$ = 12 ns — Military: tpu = 20 ns, tç o = 15 ns, ts — 15 ns • Low power — I X max.: 70 mA, commercial — I c e max.: 100 mA, military • Commercial and military temperature


    OCR Scan     		PDF PLDC20G10B/PLDC20G10 24-Pin 24-Lead 300-M 28-Lead 28-Square

    SN75112

    Abstract: No abstract text available
    Text: — 106- Dual Diff Line Driver 75112 T « H VlK áfe f* 1« MIN Ii = — 12mA A. - 9 tt * £ TYP M AX S - 0 .9 - 1 .5 V I.—»H 9 15 ns TI S N 75112 H—* L 9 15 ns FC 75112 L^H 16 25 ns NS MOT B 4 0 p F - -5 0 Q tpd m C, D H -» L Ic e " 13 25 ns 25 40


    OCR Scan     		PDF -12mA SN75112 75112/75110A/75109A SN75112

    SN75112

    Abstract: No abstract text available
    Text: — 106- Dual D iff Line D r iv e r 75112 T « H VlK áfe f* 1« MIN Ii = — 12mA A. - 9 tt * £ TYP M AX S - 0 .9 - 1 .5 V I.—»H 9 15 ns TI S N 75112 H—* L 9 15 ns FC 75112 L^H 16 25 ns NS MOT B 4 0 p F - -5 0 Q tpd m C, D H -» L Ic e " 13 25 ns 25


    OCR Scan     		PDF -12mA SN75112 SN75112

    SO-8 LTLS e3

    Abstract: ltls e3 IC LTLS E3
    Text: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )


    OCR Scan     		PDF V52C8256 V52C8256 V52CB256 SO-8 LTLS e3 ltls e3 IC LTLS E3

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V I T E L 1C V35642R05KG 5.0 VO LT2 M x 64 H IG H PER FO R M A NC E U NBUFFERED D IM M EDO M O D U LE HIGH PERFORMANCE 50 60 Max. RAS Access Tim e, tpj^c 50 ns 60 ns Max. CAS Access Tim e, (tcAc) 13 ns 15 ns Min. Cycle Time, (tpc) 84 ns 104 ns


    OCR Scan     		PDF V35642R05KG cycles/64 V35642R05KG

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V I T E L 1C V33642R05KG 3.3 VO LT2 M x 64 H IG H PER FO R M A NC E U NBUFFERED D IM M EDO M O D U LE HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAc 50 ns 60 ns Max. CAS Access Time, (tcAc) 13 ns 15 ns Min. Cycle Time, (tpc) 84 ns 104 ns Min. EDO Mode Cycle Tim e, (tpc)


    OCR Scan     		PDF V33642R05KG cycles/64 V33642R05KG

    RAS 05

    Abstract: No abstract text available
    Text: M O S E L V I T E L 1C V33644Q15KG 3.3 V O L T 4 M x 64 H IG H P ER FO R M A NC E U NBUFFERED D IM M M O D U LE HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAc 50 ns 60 ns Max. CAS Access Time, (tcAc) 13 ns 15 ns Min. Cycle Time, (tpc) 84 ns 104 ns Min. EDO Mode Cycle Time, (tpc)


    OCR Scan     		PDF V33644Q15KG cycles/32 V33644Q15KG RAS 05