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    NRVB120ESF Price and Stock

    onsemi NRVB120ESFT3G

    DIODE SCHOTTKY 20V 1A SOD123FL
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    DigiKey NRVB120ESFT3G Reel 10,000
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    Avnet Americas NRVB120ESFT3G Reel 12 Weeks 10,000
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    onsemi NRVB120ESFT1G

    DIODE SCHOTTKY 20V 1A SOD123FL
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    DigiKey NRVB120ESFT1G Reel
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    NRVB120ESFT1G Digi-Reel 1
    • 1 $3.22
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    NRVB120ESFT1G Cut Tape
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    Avnet Americas NRVB120ESFT1G Reel 0 Weeks, 2 Days 277
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    Newark NRVB120ESFT1G Reel 3,000
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    Flip Electronics NRVB120ESFT1G 9,000
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    Flip Electronics NRVB120ESFT1G

    DIODE SCHOTTKY 20V 1A SOD123FL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NRVB120ESFT1G Reel 300
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    NRVB120ESF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVB120ESFT1G On Semiconductor NRVB120 - DIODE SIGNAL DIODE, Signal Diode Original PDF
    NRVB120ESFT3G On Semiconductor NRVB120 - DIODE SIGNAL DIODE, Signal Diode Original PDF

    NRVB120ESF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR120

    Abstract: No abstract text available
    Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


    Original     		PDF MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G OD-123 MBR120ESFT1/D MBR120

    Untitled

    Abstract: No abstract text available
    Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high


    Original     		PDF MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G MBR120ESFT1/D

    Untitled

    Abstract: No abstract text available
    Text: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		PDF MBR120ESF, NRVB120ESF OD-123 MBR120ESFT1/D