NPN TRIPLE DIFFUSED 60V DC CURRENT GAIN 800 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 U nit in mm POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE = 800~3200 V qe = 5V, Ic = 0.2A Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.)(Ic = lA, Iß = 10mA) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S • • High DC Current Gain : hF£ = 800—3200 Vc e = 5V, Ic = 0.1A Low Collector Saturation Voltage : v CE(sat) = °-3V (Typ.) (Ic = 0.5A, Iß = 5mA) M A X IM U M

2SD2353

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 POWER AMPLIFIER APPLICATIONS : hpE=800~3200 . High DC Current Gain V c e = 5V , Ic=0.2A . Low Collector Saturation Voltage : VCE(sat)=0.4 V ( T y p .) (IC=1A, lB=10mA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL

2SD2461

Contextual Info: TOSHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpg i = 800~3200 Low Collector Saturation Voltage : V q £ (sat) = 0.3V (Typ.) 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 U nit in mm : h]?E = 800~3200 Low Collector Saturation Voltage : V ç e sat —0-3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)

D2461

Abstract: transistor d2461
Contextual Info: 2SD2461 TOSHIBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2S D2461 Unit in mm Rn+n ? High DC Current Gain : hpj] i = 800~3200 Low Collector Saturation Voltage : V ^ e (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm ftn + n y • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e (sat) = 0-3V (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

2SD2353

Contextual Info: TOSHIBA 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • 10 ±0.3 High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : v CE sat = °-4V (TyP-) DC Current Gain Colleetor-Emitter Saturation

2SB1602

Abstract: 2SD2462
Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10±0.3 • High DC Current Gain : hpg = 800~3200 • Low Collector Saturation Voltage ^3.2 ±0.2 3 O 2.7±0.2 ^ Oi ro O : VCE sat = °-4V (TyP-)

100L

Abstract: 2SD2352
Contextual Info: TO SH IBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : V q e sa t “ 0.3V (Typ.) MAXIMUM RATINGS (Tc = 25°C)

2SD2461

Contextual Info: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SD2352 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS Unit in mm 10± 0 .3 . High DC Current Gain : hFE=800~3200 V c e =5V, 0 3 .2 ± 0.2 2.7 _ —± 0 . 2 Ic = 0.1A . Low Collector Saturation Voltage : V CE(sat)=0.3V(Typ.) (IC =0.5A, lB=5mA)

2SB1602

Abstract: 2SD2462
Contextual Info: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602

2SB1602

Abstract: 2SD2462
Contextual Info: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602

d2462

Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •

2SD2352

Contextual Info: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • High DC Current Gain : hp^ —800~3200 • Low Collector Saturation Voltage : V q £ sat = 0.3V (Typ.) ^3.2 ±0.2 "P o O 1.1

KTD863 transistor

Abstract: NPN triple diffused 60V DC current gain 800 ktd863 ktb764
Contextual Info: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B D FEATURES A ・High Voltage : VCEO=60V Min. . ・High Current : IC(Max.)=1A. P DEPTH:0.2 ・High Transition Frequency : fT=150MHz(Typ.).

driver transistor hfe 60

Abstract: KTB764 KTD863 KTD863 transistor
Contextual Info: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B D FEATURES A ᴌHigh Voltage : VCEO=60V Min. . ᴌHigh Current : IC(Max.)=1A. P DEPTH:0.2 ᴌHigh Transition Frequency : fT=150MHz(Typ.).

2SC510

Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

c5287 equivalent transistor

Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in