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    NPN TRANSISTORS 400V 3A Search Results

    NPN TRANSISTORS 400V 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTORS 400V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2612

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING


    Original     		PDF 2SC2612 O-220 VCC150V 2SC2612

    2SC2612

    Abstract: npn transistors 400V 3A
    Text: SavantIC Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage : VCEO=400V Min APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING


    Original     		PDF 2SC2612 O-220 2SC2612 npn transistors 400V 3A

    2sc2335

    Abstract: REGULATOR IC FOR 150V 2SC2335 equivalent
    Text: Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A


    Original     		PDF 2SC2335 O-220C 600mA; 2sc2335 REGULATOR IC FOR 150V 2SC2335 equivalent

    2SC2553

    Abstract: IN 400 DC
    Text: Inchange Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max.@IC=4A APPLICATIONS


    Original     		PDF 2SC2553 O-220C VCC200V; 2SC2553 IN 400 DC

    BUS21B

    Abstract: BUS21C
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS21B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS21B 450V (Min)-BUS21C APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		PDF BUS21B/C -BUS21B -BUS21C BUS21B BUS21C BUS21B BUS21C

    2SC2535

    Abstract: npn transistors 400V 3A
    Text: SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications


    Original     		PDF 2SC2535 O-220C 2SC2535 npn transistors 400V 3A

    NPN Transistor 10A 400V

    Abstract: MJ13091 dc motor specification MJ13090
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


    Original     		PDF MJ13090/13091 --MJ13090 --MJ13091 MJ13090 MJ13091 NPN Transistor 10A 400V MJ13091 dc motor specification MJ13090

    MJ13071

    Abstract: MJ1307 MJ13070 mj130
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in


    Original     		PDF MJ13070/13071 --MJ13070 --MJ13071 MJ13070 MJ13071 MJ13071 MJ1307 MJ13070 mj130

    2SC2553

    Abstract: DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A
    Text: SavantIC Semiconductor Product Specification 2SC2553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A APPLICATIONS ·Switching regulator and high voltage


    Original     		PDF 2SC2553 O-220C 2SC2553 DC DC converter 5v to 200V ic npn transistors 400V 1A npn transistors 400V 3A

    2SC2535

    Abstract: npn transistors 400V 3A TR10S DC DC converter 5v to 200V ic
    Text: Inchange Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications


    Original     		PDF 2SC2535 O-220C 2SC2535 npn transistors 400V 3A TR10S DC DC converter 5v to 200V ic

    2SC2335

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0 s(Max.)@IC=3.0A


    Original     		PDF 2SC2335 O-220C 600mA; 2SC2335

    2sc2335

    Abstract: SUS CIRCUIT
    Text: SavantIC Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A


    Original     		PDF 2SC2335 O-220C 600mA; 2sc2335 SUS CIRCUIT

    2SC2335F

    Abstract: DC DC converter 400V
    Text: SavantIC Semiconductor Product Specification 2SC2335F Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A


    Original     		PDF 2SC2335F O-220F O-220F) 600mA; 2SC2335F DC DC converter 400V

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • MJ431  10 Amp NPN Silicon Power Transistors 125W Collector-Emitter Voltage: VCEX=400V Min)


    Original     		PDF MJ431

    2sc3150

    Abstract: 200D
    Text: SavantIC Semiconductor Product Specification 2SC3150 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/3A switching regulator applications


    Original     		PDF 2SC3150 O-220C 00V/3A 10MHz 2sc3150 200D

    2sc3457

    Abstract: NPN 800V 200B high frequency npn transistors 400V 3A high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 3a switching regulator
    Text: SavantIC Semiconductor Product Specification 2SC3457 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide ASO Safe Operating Area APPLICATIONS ·800V/3A switching regulator applications


    Original     		PDF 2SC3457 O-220C 00V/3A 2sc3457 NPN 800V 200B high frequency npn transistors 400V 3A high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 3a switching regulator

    UPT521

    Abstract: UPT522 UPT523 UPT524 UPT525
    Text: UPT521 UPT522 UPT523 UPT524 UPT525 POWER TRANSISTORS 3 Amp, 400V, Planar NPN FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current: 5A • Turn-on Time: 200ns • Turn-off Time: 900ns DESCRIPTION Unitrode high voltage transistors provide


    OCR Scan     		PDF UPT521 UPT522 UPT523 UPT524 UPT525 200ns 900ns UPT521 UPT523- UPT524/52 UPT525

    UPT311

    Abstract: SS-050 A UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324
    Text: POWER TRANSISTORS UPT311 UPT312 UPT313 UPT314 UPT315 2 Amp, 400V, Planar NPN UPT321 UPT322 UPT323 UPT324 UPT325 DESCRIPTION FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current; 3A • Turn-on Time: 200 ns • Turn-off Time-. 800 ns Unitrode high voltage transistors provide


    OCR Scan     		PDF UPT311 UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324 UPT325 SS-050 A UPT315

    TIP54

    Abstract: TIP51 TIP52 TIP-52 TIP-54 e40V TIP53 switching ic 5 Amper
    Text: ¿2&M0SPEC HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN TIP51 TIP52 TIP53 TIP54 . designed for line operated audio output amplifier, and switching power supply drivers applications. FEATURES: * Collector-Emitter Sustaining Voltage -250-400V Min *3A R ated Collector Current


    OCR Scan     		PDF -250-400V 200mA TIP51 TIP52 TIP53 TIP54 -TIP51-TIP52 TIP54 TIP-52 TIP-54 e40V switching ic 5 Amper

    743 ic

    Abstract: JE13009 MJE13009 IC 741 AMP
    Text: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability


    OCR Scan     		PDF MJE13009 T0-220-AB MJE13009 743 ic JE13009 IC 741 AMP

    2N6510

    Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
    Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass


    OCR Scan     		PDF 2N6510 2N6511 2N6512 2N6513 2N6514 2NG510 2N6514

    2N6671

    Abstract: No abstract text available
    Text: General ^ Semiconductor Industries, Inc. V tw itch P/tft HIGH POWER NPN 2N6671 2N6672 2N6673 TRANSISTORS NPN 300, 350, 400V 8 AMP SW IT C H IN G tf — 250ns TYPICAL The 2N6673 series of NPN silicon transistors is designed fo r high speed sw itching systems. This unique series features General S em iconductor Industries' C2R®


    OCR Scan     		PDF 2N6671 2N6672 2N6673 2N6673 250ns

    2N5664

    Abstract: cc 3053
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,


    OCR Scan     		PDF 2N5664 2N5665 2N5666 2N5667 MIL-S-19500/455 cc 3053

    1498H

    Abstract: UPT721 UPT722 UPT723 UPT724 UPT725
    Text: POWER TRANSISTORS UPT721 UPT722 UPT723 UPT724 UPT725 5 Amp, 400V, Planar NPN FEATURES DESCRIPTION • • • • U nitrode h igh voltage tra n sisto rs provide a u niq u e com bination of low saturation voltage, fast sw itching, an d excellent gain. They are ideally suited for off-line power


    OCR Scan     		PDF UPT721 UPT722 UPT723 UPT724 UPT725 250ns 800ns 1498H UPT725