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    NPN TRANSISTOR VCEO 80V 100V DARLINGTON Search Results

    NPN TRANSISTOR VCEO 80V 100V DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 80V 100V DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    Darlington 40A

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary SILICON COMPLEMENTARY transistors darlington CJD112 CJD117 darlington complementary power amplifier NPN Transistor VCEO 80V 100V hfe 100
    Text: CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching


    Original     		PDF CJD112 CJD117 CJD112, 750mA, CJD112) CJD117) 26-August Darlington 40A NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier NPN Transistor VCEO 80V 100V hfe 100

    200w AUDIO AMPLIFIER

    Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
    Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 25ime 300ms, 200w AUDIO AMPLIFIER transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a

    "Darlington Transistors"

    Abstract: CJD112 CJD117 NPN transistor Ic20A NPN Transistor VCEO 80V 100V
    Text: CJD112 NPN CJD117 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package


    Original     		PDF CJD112 CJD117 CJD112, CJD117 750mA, CJD112) CJD117) "Darlington Transistors" NPN transistor Ic20A NPN Transistor VCEO 80V 100V

    tip120

    Abstract: TIP122 TRANSISTOR tip122 transistor tip120 tip121 darlington NPN Transistor TO220 VCEO 80V 100V equivalent of TIP122 NPN Transistor VCEO 80V 100V DARLINGTON TIP121 tip120 darlington
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : TIP121 80 V : TIP122 Collector-Emitter Voltage : TIP120


    Original     		PDF TIP120/121/122 O-220 TIP125/126/127 TIP121 TIP122 TIP120 TemTIP121 tip120 TIP122 TRANSISTOR tip122 transistor tip120 tip121 darlington NPN Transistor TO220 VCEO 80V 100V equivalent of TIP122 NPN Transistor VCEO 80V 100V DARLINGTON TIP121 tip120 darlington

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: TIP142 TIP140 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP145 TIP141
    Text: TIP140 to TIP142 & TIP145 to TIP147 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage VCEO sus = 60V (Minimum) - TIP140, TIP145 = 80V (Minimum) - TIP141, TIP146


    Original     		PDF TIP140 TIP142 TIP145 TIP147 TIP140, TIP145 TIP141, TIP146 TIP142, tip142/TIP147 AMPLIFIER CIRCUIT TIP142 TIP147 tip142 tip147 darlington TIP142 power amplifier tip147 transistor tip142,tip147 amplifier circuits TIP141

    Untitled

    Abstract: No abstract text available
    Text: BDX69A BDX69A BDX69B BDX69C S EM E LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms,

    "Darlington Transistors"

    Abstract: BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65
    Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, "Darlington Transistors" BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65

    NPN Transistor 10A 24V

    Abstract: NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6530 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A
    Text: DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: TC=25°C unless otherwise noted


    Original     		PDF 2N6530 2N6531 2N6532 2N6533 O-220 2N6530 O-220 NPN Transistor 10A 24V NPN Transistor TO220 VCEO 80V 100V POWER TRANSISTOR TO-220 2N6533 NPN Transistor VCEO 80V 100V hfe 100 2N6532 2N6531 transistor 5k NPN Transistor TO220 VCEO 50v i 10A

    TIP125

    Abstract: TIP127 TIP126 NPN Transistor TO220 VCEO 80V 100V TIP127 Application Note NPN Transistor VCEO 80V 100V DARLINGTON TIP125 transistor NPN Darlington transistor npn 60v 3a to220
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP125/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -60 V : TIP126 -80 V : TIP127 Collector Emitter Voltage -120 V


    Original     		PDF TIP125/126/127 O-220 TIP120/121/122 TIP126 TIP127 TIP125 TIP125 TIP127 TIP126 NPN Transistor TO220 VCEO 80V 100V TIP127 Application Note NPN Transistor VCEO 80V 100V DARLINGTON TIP125 transistor NPN Darlington transistor npn 60v 3a to220

    Untitled

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio


    Original     		PDF BDX69 BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ns,

    BDV66B

    Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS
    Text: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.


    Original     		PDF BDV66, BDV66A, BDV67A BDV66B, BDV67B BDV66A BDV66B BDV66B BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS

    200W TRANSISTOR AUDIO AMPLIFIER

    Abstract: BDX 20a TRANSISTOR C 2 SUB QR208 TRANSISTOR BDX BDX68A BDX68B BDX69 BDX69A BDX69B
    Text: DEF STAN 59 - 61 - PART 70 - 0128 - 091 Detail Spec. SEME Issue 1. LAB Jan. 1995. BDX69 BDX69A BDX69B BDX69C NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 4.2 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. BDX69A BDX69A BDX69B


    Original     		PDF BDX69 BDX69A BDX69B BDX69C BDX69A BDX69B BDX68, BDX68A, 200W TRANSISTOR AUDIO AMPLIFIER BDX 20a TRANSISTOR C 2 SUB QR208 TRANSISTOR BDX BDX68A BDX68B

    TIP102

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 TIP102 TIP100 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter

    Untitled

    Abstract: No abstract text available
    Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220


    Original     		PDF TIP120 TIP125 O-220 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127

    pin diagram of ic 4066

    Abstract: tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary
    Text: TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.


    Original     		PDF TIP131, TIP136 TIP132, TIP137 TIP131 TIP132 pin diagram of ic 4066 tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary

    Untitled

    Abstract: No abstract text available
    Text: BDX68A BDX68A BDX68B BDX68C S EM E LA B PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 300ms,

    BDX 20a

    Abstract: BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C 200w audio amplifier ic
    Text: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX68A BDX68B BDX68C BDX69, BDX69A, BDX69B, BDX69C. 300ms, BDX 20a BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C 200w audio amplifier ic

    SDM3303

    Abstract: SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON
    Text: -JSutron Devices. Inc. MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR*« FORMERLY 03] CHIP NUMBER dTI CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available


    OCR Scan     		PDF 203mm) O-66/3 SDM3303 SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON

    DARLINGTON 3A 100V npn array

    Abstract: No abstract text available
    Text: SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4005 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIP 10 Pin)


    OCR Scan     		PDF MP4005 DARLINGTON 3A 100V npn array

    Untitled

    Abstract: No abstract text available
    Text: BDW93/A/B/C NPN EPITAXIAL SILICO N TRANSISTOR POW ER DARLINGTON TR HAMMER DRIVERS, AUDIO AM PLIFIERS APPLICATIONS • Complement to BDW94.BDW94A, BDW 94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BDW93 Symbol


    OCR Scan     		PDF BDW93/A/B/C BDW94 BDW94A, BDW94C BDW93 BDW93A BDW93B 100mA 100mA

    T1P110

    Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
    Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER


    OCR Scan     		PDF TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102

    DARLINGTON 3A 100V npn array

    Abstract: No abstract text available
    Text: MP6901 SILICON NPN/PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Package with Heat Sink Isolated to Lead. (SIP 12 Pin)


    OCR Scan     		PDF MP6901 DARLINGTON 3A 100V npn array