NPN TRANSISTOR C1815 Search Results

NPN TRANSISTOR C1815 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN TRANSISTOR C1815 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor C1815 Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815 Text: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance	Original	PDF	C1815 C1815 A1015 350um 350um 110um 110um 100um 100um transistor C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
C1815 GR Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage	Original	PDF	C1815 100mA, 30MHz C1815 GR
c1815 gr Abstract: Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage	Original	PDF	C1815 100mA, 30MHz c1815 gr Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr
c1815 transistor Abstract: c1815 gr Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage	Original	PDF	C1815 100mA, 30MHz c1815 transistor c1815 gr
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 C1815 C1815 100uA, 100mA, 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 C1815 C1815 100uA, 100mA, 30MHz
C1815HF Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 C1815 C1815 100uA, 30MHz C1815HF
transistor C1815 Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 C1815 C1815 100uA, 100mA, 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	PDF	C1815
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60	Original	PDF	C1815 100mA, 30MHz
transistor c1815 Abstract: c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815 Text: C1815 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	C1815 OT-23 OT-23 C1815 100uA, 100mA, 30MHz transistor c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815
C1815 GR Abstract: c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815 Text: C1815 Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage	Original	PDF	C1815 100uA, 100mA, 30MHz C1815 GR c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815
c1815 SOT-23 Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C	Original	PDF	C1815 OT-23 OT-23 MIL-STD-202E c1815 SOT-23 transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf

"device marking" HF Abstract: C1815 C1815LT1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: 0.15 A	Original	PDF	OT-23 C1815LT1 OT--23 C1815LT1 037TPY 950TPY 550REF 022REF "device marking" HF C1815
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage	Original	PDF	OT-23 C1815LT1 OT-23 30MHz C1815LT1
Untitled Abstract: No abstract text available Text: C1815T 400 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H J A Collector 2 D Millimeter Min. Max. 4.40 4.70 4.30 4.70	Original	PDF	C1815T 100mA, 31-Dec-2009
C1815 NPN Transistor Abstract: C1815 TO92 Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range	Original	PDF	C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92
Untitled Abstract: No abstract text available Text: C1815LT1 TRANSISTOR NPN COLLECTOR 3 P b Lead(Pb)-Free 3 1 1 BASE FEATURES 2 2 EMITTER Power dissipation SOT-23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50	Original	PDF	C1815LT1 OT-23 23-Oct-2013
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR（ NPN ） 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60	Original	PDF	C1815 30MHz 270TYP 050TYP
pin configuration NPN transistor 2sc1815 Abstract: pin configuration of transistor c1815 C1815 GR 2SC1815 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.	Original	PDF	2SC1815 2SC1815 C1815 100uAdat) 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 C1815 GR 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y
Untitled Abstract: No abstract text available Text: SOT-23 Plastic-Encapsulate Transistors C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range	Original	PDF	OT-23 C1815LT1 OT-23 30MHz C1815LT1
Untitled Abstract: No abstract text available Text: C1815LT1 C1815LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150	Original	PDF	C1815LT1 OT-23 30MHz C1815LT1
C1815 Abstract: 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor Text: C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 C B Top View 1 1 K Collector 2 E 2 3 MARKING: HF D F	Original	PDF	C1815 OT-23 31-Dec-2009 C1815 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor

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NPN TRANSISTOR C1815 Search Results

NPN TRANSISTOR C1815 Result Highlights (5)

NPN TRANSISTOR C1815 Datasheets Context Search

transistor C1815

C1815 GR

c1815 gr

c1815 transistor

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C1815HF

transistor C1815

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transistor c1815

C1815 GR

c1815 SOT-23

"device marking" HF

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C1815 NPN Transistor

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pin configuration NPN transistor 2sc1815

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C1815