Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR 10A 40V TO3 Search Results

    NPN TRANSISTOR 10A 40V TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 10A 40V TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Silicon NPN Darlington transistor

    Abstract: No abstract text available
    Text: NTE214 Silicon NPN Transistor Darlington Driver Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.


    Original     		PDF NTE214 NTE214 500IB1 500IB2 Silicon NPN Darlington transistor

    NTE130

    Abstract: NTE130MP NTE219 NTE219MCP
    Text: NTE130 NPN & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.


    Original     		PDF NTE130 NTE219 NTE130MP NTE130 NTE219MCP NTE219

    NTE283

    Abstract: npn 10a 800v
    Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include


    Original     		PDF NTE283 NTE283 npn 10a 800v

    buy47

    Abstract: No abstract text available
    Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage


    Original     		PDF BUY47, BUY48 O-205AD) BUY47 71mW/Â buy47

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage


    Original     		PDF BUY48X O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)


    Original     		PDF 2N5154T2A 71mW/Â 67mW/Â O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY48X • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage


    Original     		PDF BUY48X O-205AD) 71mW/Â Par825

    buy48

    Abstract: buy47
    Text: HIGH VOLTAGE, HIGH CURRENT NPN TRANSISTOR BUY47, BUY48 • Hermetic TO39 TO-205AD Metal Package. • High Voltage • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage


    Original     		PDF BUY47, BUY48 O-205AD) BUY47 BUY48

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage (IE = 0)


    Original     		PDF 2N5154T2A O-205AD)

    TIP142

    Abstract: equivalent transistor 1970 tip142 equivalent tip141 equivalent TIP141 transistor tip142 TIP141 TRANSISTOR TIP-142 SC-65 TIP140
    Text: TIP140/TIP141/TIP142 NPN Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. Industrial Use Complement to TIP145/146/147 Equivalent Circuit


    Original     		PDF TIP140/TIP141/TIP142 TIP145/146/147 TIP140 TIP141 TIP142 TIP140/TIP141/TIP142 TIP142 equivalent transistor 1970 tip142 equivalent tip141 equivalent TIP141 transistor tip142 TIP141 TRANSISTOR TIP-142 SC-65 TIP140

    transistor darlington package to.3

    Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
    Text: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF MJ2501 MJ3001 MJ3001 transistor darlington package to.3 transistor mj3001 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin 150w darlington transistor to3 package pnp 150w darlington transistor to3 package

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP140F/141F/142F TIP145F/146F/147F TIP140T TIP141T TIP142T

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P • Complement to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP140/141/142 TIP145/146/147 TIP140 TIP141 TIP142

    TIP142TU

    Abstract: TIP141LTU tip140 equivalent
    Text: TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145/146/147 TO-3P 1 NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF TIP140/141/142 TIP145/146/147 TIP140 TIP141 TIP142 TIP140 TIP142TU TIP141LTU tip140 equivalent

    pin configuration transistor mj2955

    Abstract: pin configuration transistor 2n3055 2N3055 pnp transistor 2N3055 hfe 2n3055 MJ2955 TRANSISTOR NPN Transistor 2N3055 2n3055 pin Mj2955 power transistor general purpose 2n3055 transistors
    Text: Transys Electronics L I M I T E D 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage RBE=100Ω


    Original     		PDF 2N3055 MJ2955 kg/100 pin configuration transistor mj2955 pin configuration transistor 2n3055 pnp transistor 2N3055 hfe 2n3055 MJ2955 TRANSISTOR NPN Transistor 2N3055 2n3055 pin Mj2955 power transistor general purpose 2n3055 transistors

    2N3055 series voltage regulator

    Abstract: 2n3055 voltage regulator 2N3055 power circuit 2N3055 power amplifier circuit equivalent transistor 2n3055 2n3055 application note 2N3055 TO-3 NPN Transistor 2N3055 power transistor 2n3055 2N3055
    Text: DC COMPONENTS CO., LTD. 2N3055 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 Pinning 1 = Base


    Original     		PDF 2N3055 2N3055 series voltage regulator 2n3055 voltage regulator 2N3055 power circuit 2N3055 power amplifier circuit equivalent transistor 2n3055 2n3055 application note 2N3055 TO-3 NPN Transistor 2N3055 power transistor 2n3055 2N3055

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    2N5301

    Abstract: No abstract text available
    Text: 836860 2 SOL ITRON DEV ICES INC t.1 3 DE fl3t.flt.02 0001313 t. | ¡¿¡olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2N5301 TYPE: NPN E P I BASE CASE: TO-3 • . 40 V Voltage, Collector to Emitter (V cE0 . .


    OCR Scan     		PDF 2N5301 5725E 2N5301

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    2N3773 equivalent

    Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
    Text: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:


    OCR Scan     		PDF 79mnj JAN2N3771. JAN2N3772. 2N3773. 2N4347. 2N4348. 2N6262 C-112 C-113 2N3773 equivalent transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772

    DF 331 TRANSISTOR

    Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
    Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S


    OCR Scan     		PDF 0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR