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    NPN SOT89 Search Results

    NPN SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN SOT89 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


    Original     		BFQ19 BFQ19 PDF

    sot89 "NPN TRANSISTOR"

    Abstract: npn TRANSISTOR SOT89 BFQ18A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ18A NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ18A PINNING NPN transistor in a plastic SOT89


    Original     		BFQ18A MBK514 sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 BFQ18A PDF

    Philips FA 145

    Abstract: BFQ17
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor DESCRIPTION BFQ17 PINNING NPN transistor in a SOT89 plastic


    Original     		BFQ17 MBK514 Philips FA 145 BFQ17 PDF

    BFT92A

    Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
    Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E


    OCR Scan     		BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92 PDF

    SMD Code 12W SOT23

    Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
    Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH


    OCR Scan     		OT-89 CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 SMD Code 12W SOT23 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type,


    Original     		500mA/50mA) FHB1132 OT-89 FHD1664 OT-89 DED1664Q FHD1664R 100mA 500mA PDF

    transistor NPN 30 watt

    Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME


    Original     		FHFCX491 OT-89 OT-89 FHFCX491 500mA 100mA 100mA 100MHZ transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


    Original     		UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048 PDF

    NPN Transistor 1A 100V

    Abstract: sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor FHFCX493 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX593 SOT-89 PIN ASSIGNMENT 引腳說明


    Original     		FHFCX493 OT-89 FHFCX593 OT-89 FHFCX493 500mA 100mA 100MHZ NPN Transistor 1A 100V sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN PDF

    229 transistor npn

    Abstract: PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST
    Text: SHORTFORM TABLES INDEX Table No. Table D escription A: SOT23 BIPO LARTR AN SISTO R S: Page no. High Current SuperSO T npn /(pnp) 2 -6 2)a SuperSO T (npn) 2 -6 2)b SuperSO T (pnp) 2 -7 3) High Perfom ance Low Voltage (npn)/(pnp) 2 -8 4) High Perfom ance High Voltage (npn)/(pnp)


    OCR Scan     		OT223 750mA) 229 transistor npn PNP avalanche transistor high gain PNP RF TRANSISTOR "dual TRANSISTORs" pnp npn SM-8 BIPOLAR TRANSISTOR darlington sot23 npn transistor pnp 1a high gain low voltage NPN transistor sot23 17 sot23 NPN TRANSISTORS LIST PDF

    ZXTN5551Z

    Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
    Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating


    Original     		ZXTN5551Z 600mA ZXTP5401Z ZXTN5551ZTA D-81541 ZXTN5551Z TS16949 ZXTP5401Z ZXTN5551ZTA PDF

    he8050

    Abstract: HE8550 HE8050G
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B HE8050-x-T9N-K HE8050L-x-AB3-R HE8550 HE8050G PDF

    he8050l

    Abstract: he8050 HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L HE8050G HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B he8050l HE8050-x-AB3-R HE8050G DA QW he8050 d HE8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER  DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


    Original     		2SD2686 2SD2686 2SB2686G-x-AB3-R OT-89 QW-R208-050 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER „ DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s


    Original     		2SD2686 2SD2686 2SD2686L-AB3-R 2SD2686G-AB3-R OT-89 QW-R208-050 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 PDF

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS5550 NPN SILICON TRANSISTOR NPN HIGH-VOLTAGE TRANSISTORS „ DESCRIPTION The UTC USS5550 is a NPN transistor which features low current and high voltage. It is generally suitable for switching and amplification in high voltage applications such as telephone.


    Original     		USS5550 USS5550 300mA USS5550G-AB3-R OT-89 QW-R208-046 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		HE8050 HE8050 HE8550 OT-89 QW-R208-013 PDF

    2SD1664L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION 1 The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES SOT-89 *Low VCE SAT : VCE (SAT)= 0.15V(Typ) (IC/IB= 500mA/50mA) *Complement the 2SB1132.


    Original     		2SD1664 2SD1664 OT-89 500mA/50mA) 2SB1132. 2SD1664L 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664L PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


    Original     		HE8050 HE8050 HE8550 OT-89 QW-R208-013 PDF

    2SB1132

    Abstract: 2SD1664 2SD1664G-
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR „ DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. „ FEATURES 1 *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.


    Original     		2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 2SD1664L 2SD1664G 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664G-x-AB3-R 2SB1132 2SD1664G- PDF