NPN EPITAXIAL SILICON ZG Search Results

NPN EPITAXIAL SILICON ZG Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
P104	Coilcraft Inc	Silicon Controlled Rectifier,

NPN EPITAXIAL SILICON ZG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor marking zg Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal general	OCR Scan	PDF	CMXT2222A OT-26 150mA, 15nnA OT-26 06-January transistor marking zg npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Transistor BSX 62-16 Abstract: No abstract text available Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3	OCR Scan	PDF	023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16
ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	PDF	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Transistor BFr 99 Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620 Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,	OCR Scan	PDF	fl235bDS 2N6620. Q62702-F346-S1 Q68000-A4668 fl23Sfc 0004fc BFR34A 200MHz Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
bfr 547 Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise	OCR Scan	PDF	fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
transistor c 5855 Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44 Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C	OCR Scan	PDF	PTB23006U FO-41B 7110fl2b D0T433b FO-41B. ocma37 transistor c 5855 npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44
2SC2783 Abstract: VC-80 Series uhf 13W amplifier Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	PDF	2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)	OCR Scan	PDF	2SC3279 Ta-25 961001EAA2'
2-13B1A Abstract: Transistor S5B 2SC2290 equivalent 2sc2290 Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)	OCR Scan	PDF	2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2638 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 38 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 6W Min. (f= 175MHz, V <x = 12.5V, Pi = 0.5W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	PDF	2SC2638 175MHz,
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain	OCR Scan	PDF	2SC2290 28MHz 60WpEP 961001EAA2'
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic	OCR Scan	PDF	2SC2643 470MHz,
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	PDF	2SC2642 470MHz,
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low N oise F igure, H igh Gain. • N F = l.ld B , \|S2 le l2 = 13dB f= lG H z U n it in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	PDF	2SC4840

Untitled Abstract: No abstract text available Text: TO SHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f í n n fi UHF BAND POWER AMPLIFIER APPLICATIONS Output Power Unit in mm Po = 3W Min. r f= 4 .7 0 iv m 7 V. / in = 1 9. RV -P i- = n 4.W1 . , MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SC3006 01//F 10//F
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN9C10FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C1OFT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES	OCR Scan	PDF	HN9C10FT 2SC5261 2SC5086 2000MHz 1000MHz CB--10V, --10V, 500MHz
2SC5086 Abstract: 2SC5261 HN9C10FT Text: TO SH IBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C1OFT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 1 i r 4- A •	OCR Scan	PDF	HN9C10FT 2SC5261 2SC5086 2SC5086 HN9C10FT
bly 2 10 Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz	OCR Scan	PDF	BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 flFT um • ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • U nit in mm TWO devices are built in to the super-thin and ultra super mini 2.1 ± 0.1	OCR Scan	PDF	HN9C10FT 2SC5261 2SC5086 500MHz --20mA, 1000M
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC4839 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4839 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , \|S2 le l2= 12dB f=lG H z U nit in mm M A X IM U M RATINGS (Ta = 25°C) SYMBOL	OCR Scan	PDF	2SC4839
2SC4083 Abstract: 2SC3838K T106 T146 T147 Text: h 7 > y X $ /Transistors 2SC3838K/2SC4083 X t f i ^ V 7 J l / y i / - t N P N V ' J =1> h 7 > V ^ i ! 2SC3838K 2SC4083 Epitaxial Planar NPN Silicon Transistors Amplifier • i 1 f r t f 'S '- 'o fT= 3.2GHz (Typ.) 2) C c-rb b l - Hi /Di mensi ons (Unit : mm)	OCR Scan	PDF	2SC3838K/2SC4083 2SC3838K 2SC4083 2SC3838K sc-59 dimen20 IS12I 2SC4083 T106 T146 T147
2SC1923-O Abstract: No abstract text available Text: 2SC1923 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A P P LIC A T IO N S . • Small Reverse Transfer Capacitance : Cre = 0.7pF Typ. • Low Noise Figure : NF = 2.5dB (Typ.) (f= 100MHz)	OCR Scan	PDF	2SC1923 100MHz) 2SC1923-O
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	PDF	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	PDF	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

NPN EPITAXIAL SILICON ZG Search Results

NPN EPITAXIAL SILICON ZG Result Highlights (5)

NPN EPITAXIAL SILICON ZG Datasheets Context Search

transistor marking zg

Transistor BSX 62-16

ABE 422

Transistor BFr 99

bfr 547

transistor c 5855

2SC2783

Untitled

2-13B1A

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2SC5086

bly 2 10

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2SC4083

2SC1923-O

W1P 59 transistor

BFG55A