Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN DPAK Search Results

    NPN DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.


    Original     		PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.


    Original     		PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.


    Original     		PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 PDF

    PNP Transistor DPAK

    Abstract: No abstract text available
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		MJD200 MJD210 PNP Transistor DPAK PDF

    MJD200RL

    Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100 PDF

    MJD200

    Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G PDF

    MJD200

    Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4 PDF

    MJD210

    Abstract: MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJD200 MJD210 MJD200/D MJD210 MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G PDF

    MJD200

    Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G PDF

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier


    Original     		MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100 PDF

    NJVMJD210T4G

    Abstract: PNP Transistor DPAK
    Text: MJD200 NPN , MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		MJD200 MJD210, NJVMJD210T4G MJD200/D NJVMJD210T4G PNP Transistor DPAK PDF

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier


    Original     		MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100 PDF

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: MOTOROLA Order this document by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications.


    Original     		MJD200/D* MJD200/D 1N5825 MJD200 MJD210 MSD6100 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS


    Original     		MJD200 MJD210 AEC-Q101 MJD200/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		BUJ303CD OT428 Condition10 PDF

    bcp68t1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310 PDF

    BCP68T1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		BCP68T1 OT-223 r14525 BCP68T1/D BCP68T1 BCP68T3 BCP69T1 SMD310 PDF

    DPAK

    Abstract: MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G MJD210RL
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc


    Original     		MJD200 MJD210 DPAK MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G MJD210RL PDF

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		BUJ303AD OT428 PDF

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


    Original     		BUJ303AD OT428 PDF

    BUJ302AD

    Abstract: No abstract text available
    Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits


    Original     		BUJ302AD OT428 BUJ302AD PDF

    STD724T4

    Abstract: No abstract text available
    Text: STD724T4 NPN MEDIUM POWER TRANSISTOR n n SURFACE MOUNTING DEVICE IN MEDIUM POWER DPAK POWER PACKAGE AVAILABLE IN TAPE & REEL PACKING Figure 1: Package APPLICATIONS n VOLTAGE REGULATION n RELAY DRIVER n GENERIC SWITCH 3 DESCRIPTION The device is a NPN transistor manufactured


    Original     		STD724T4 STD724T4 PDF

    MJD200

    Abstract: MJD210 fr 0204 TO252-DPAK 0212c
    Text: MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS . AUDIO AMPLIFIERS DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor


    OCR Scan     		MJD200 MJD210 O-252 MJD210. MJD200 MJD210 fr 0204 TO252-DPAK 0212c PDF