Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN 5A Search Results

    NPN 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5339

    Abstract: P008B
    Text: 2N5339 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF 2N5339 2N5339 P008B

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		PDF USS4350 USS4350 USS5350 USS4350L-AA3-R USS4350G-AA3-R USS4350L-AB3-R USS4350G-AB3-R QW-R207-022 free transistor and ic equivalent data

    Inductive Load Driver

    Abstract: USS4
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 Preliminary NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		PDF USS4350 USS4350 USS5350 USS4350G-AA3-R USS4350G-AB3-R OT-223 OT-89 QW-R207-022 Inductive Load Driver USS4

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4350 Preliminary NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply


    Original     		PDF USS4350 USS4350 USS5350 USS4350G-AA3-R OT-223 QW-R207-022

    USS4450

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD USS4450 NPN SILICON TRANSISTOR 50V, 5A NPN LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC USS4450 is a NPN transistor with low VCEsat. It has high collector current IC, ICM performance. This device can be used in power management applications, such as DC/DC converters,


    Original     		PDF USS4450 USS4450 QW-R209-026

    BU941

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941L-T3P-T BU941G-T3P-T BU941L-TA3-T BU941G-TA3-T BU941L-TQ2-T BU941G-TQ2-T BU941L-TQ2-R BU941G-TQ2-R O-220 BU941

    vbe 10v, vce 500v NPN Transistor

    Abstract: transistor ignition circuit bu941
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-T BU941L-TQ2-T BU941-TQ2-R BU941L-TQ2-R O-220 vbe 10v, vce 500v NPN Transistor transistor ignition circuit bu941

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T BU941ZL-TQ2-T BU941ZG-TQ2-T BU941ZL-TQ2-R BU941ZG-TQ2-R O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. 


    Original     		PDF BTC1510F3 BTC1510F3 BTC1510F3L-TN3-T BTC1510F3G-TN3-T BTC1510F3L-TN3-R BTC1510F3G-TN3-R BTC1510F3L-TQ2-T BTC1510F3G-TQ2-T BTC1510F3L-TQ2-R BTC1510F3G-TQ2-R

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode APPLICATIONS TO-3P * High ruggedness electric ignitions 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 QW-R214-004 hFE-100 NPN Transistor 10A 24V utc 1018 5v 10a dc driver ic NPN power Transistor 10A 24V hFE100 VCE-500V npn high voltage transistor 500v 8a 24v switching transistor transistor ignition circuit bu941

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 BU941ZL-TQ2-T BU941ZG-TQ2-T O-263 BU941ZL-TQ2-R

    ignition coil bu941l

    Abstract: hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941 NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER „ FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode „ APPLICATIONS * High ruggedness electric ignitions „ INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941 BU941L BU941-T3P-T BU941L-T3P-T BU941-TA3-T BU941L-TA3-T BU941-TQ2-R BU941L-TQ2-R BU941-TQ2-T BU941L-TQ2-T ignition coil bu941l hFE-100 utc 1018 bu941l ignition coil bu941 NPN Transistor 10A 24V ignition coil npn power darlington BU941L-T3P-T vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR  DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.  FEATURES * Humidifier, DC-DC converter, and general purpose  ORDERING INFORMATION


    Original     		PDF 2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 2SC3834L-T3P-T 2SC3834G-T3P-T QW-R203-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode  APPLICATIONS * High ruggedness electric ignitions  INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BU941Z BU941ZL-T3P-T BU941ZG-T3P-T BU941ZL-TA3-T BU941ZG-TA3-T O-220 QW-R214-022. QW-R214-022

    NPN Transistor 10A 24V

    Abstract: No abstract text available
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 O-220 QW-R203-025 NPN Transistor 10A 24V

    hFE-100

    Abstract: NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100
    Text: UTC BU941 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER FEATURES *NPN darlington *Integrated antiparallel collector-emitter diode 1 APPLICATIONS * High ruggedness electric ignitions TO-220 1: BASE 2:COLLECTOR 3: EMITTER


    Original     		PDF BU941 O-220 QW-R203-025 hFE-100 NPN Transistor 10A 24V utc 1018 transistor ignition circuit bu941 BU941 ignition coil bu941 npn high voltage transistor 500v 8a NPN DARLINGTON 10A 500V 12SAFE hFE100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ ORDERING INFORMATION Ordering Number


    Original     		PDF TIP122 TIP122 TIP122-T60-K TIP122L-T60-K TIP122-TA3-T TIP122L-TA3-T TIP122-TF3-T TIP122L-TF3-T TIP122-TN3-R TIP122L-TN3-R

    2n3901 equivalent

    Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent

    2N5339

    Abstract: No abstract text available
    Text: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.


    OCR Scan     		PDF 2N5339 2N5339

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.


    OCR Scan     		PDF N5339 2N5339 2N5339 P008B

    2N3643

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3643

    2N3643

    Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3643 2N3844 transistor 2N3

    2N3662

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3662

    2N3855

    Abstract: 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860 2N2711 2N2712 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E Device Type b v CEO @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3855 2N3856 2N3854 2N3856A 2N3855A 2N3854A n3860