NTE335
Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE335
NTE336
NTE335
NTE336
30MHz.
30MHz
1817pF
777pF
J341
NPN 250W
n-p-n r.f. power transistors
J201 equivalent
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NTE352
Abstract: w65 transistor RF POWER TRANSISTOR NPN
Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment
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NTE352
NTE352
175MHz.
175MHz
175MHz
175MHz,
w65 transistor
RF POWER TRANSISTOR NPN
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to63
Abstract: NTE70 180v 250w
Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.
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NTE70
NTE70
to63
180v 250w
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NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
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NTE99
NTE99
NPN Transistor 50A 400V
NPN 400V 40A
npn darlington 400v 15a
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250w npn
Abstract: NPN 250W NTE60 NTE61 NTE61MCP
Text: NTE60 NPN & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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NTE60
NTE61
500mA
500mA,
250w npn
NPN 250W
NTE60
NTE61
NTE61MCP
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NTE388
Abstract: NPN 250W NTE68 NTE68MCP
Text: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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NTE388
NTE68
NTE388
NPN 250W
NTE68
NTE68MCP
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BU808DFH
Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416
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STX112
STBV68
STBV45
STBV42
STBV32
STX13003
BSS44
BFX34
2N5153
2N5681
BU808DFH
ST2310DHI
BU808DFh equivalent
BU808DFI equivalent
BU808DFh bu808dfi
BUX98APW
BUV27
BD911/BD912
electronic ballast MJE13007
ST1803DFH
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NPN 250W
Abstract: 250w npn MRF448 transistor 250W
Text: MRF448 The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF448
30MHz,
NPN 250W
250w npn
MRF448
transistor 250W
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NPN VCEO 800V
Abstract: NTE2533
Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2533
100ns
100mA,
NPN VCEO 800V
NTE2533
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NTE387MP
Abstract: NTE387
Text: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
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NTE387
NTE387MP
NTE387
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IC 5369
Abstract: BUV18 to-204ae NPN 160v 250W transistors TO-204AE Package BUV19
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
IC 5369
BUV18
to-204ae
NPN 160v 250W transistors
TO-204AE Package
BUV19
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BUV18
Abstract: No abstract text available
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
BUV18
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Untitled
Abstract: No abstract text available
Text: BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS Designed for high energy applications 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) requiring robust fast switching devices 1.52 (0.06) 3.43 (0.135)
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BUV18
BUV19
O-204AE)
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induction cooker schematic diagram
Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W
Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching
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NTE2558
100mA
induction cooker schematic diagram
schematic diagram induction heating
schematic diagram induction cooker
diagram induction cooker
schematic induction heating
induction cooker circuit diagram
induction cooker schematic
induction heating schematic
induction cooker
Darlington NPN 250W
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NPN VCEO 800V
Abstract: NTE2533 NPN Transistor 1500V 20a
Text: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE2533
100ns
100mA,
NPN VCEO 800V
NTE2533
NPN Transistor 1500V 20a
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BUV62
Abstract: LE17
Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62 • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available
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BUV62
O-204AE)
BUV62
LE17
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NPN Transistor 15A 400V to3
Abstract: BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v
Text: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available
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BUV62A
O-204AE)
NPN Transistor 15A 400V to3
BUV62A
NPN 400V 40A
NPN 250W
LE17
transistor IC 12A 400v
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transistor f421
Abstract: SGSF421
Text: SGSF321IF321 SGSF421/IF421 SGS-T110MS0N FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH S W ITC H IN G SPEED NPN POWERTRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 70kHz SWITCHING SPEED • LOW COST DRIVE CIRCUITS
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SGSF321IF321
SGSF421/IF421
SGS-T110MS0N
70kHz
O-220
ATT220
140Wto
500ms
transistor f421
SGSF421
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BUF405
Abstract: BUF405A 400V 5A NPN 100W
Text: BUF405 BUF405A SGS-THOMSON FASTSWiTCH EASY-TO-DRIVE ETD NPN TRANSISTORS PR ELIM IN A R Y DATA > HIGH SWITCHING SPEED NPN POWER TRANSISTORS * EASY TO DRIVE • HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS
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BUF405
BUF405A
100KHZ
100KHz
BUF405/405A
--SC-B355
400V 5A NPN 100W
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Untitled
Abstract: No abstract text available
Text: *57 BUF405 BUF405A SCS-THOMSON i u FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R ELIM IN A R Y DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS
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BUF405
BUF405A
100KHZ
100KHz
F105A
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NPN Transistor 1A 400V
Abstract: 405a BUF405 BUF405A 02JJ
Text: 7^5^537 00555^5 b • T~-3>3~1^ BUF405 BUF405A SGS-THOMSON ¡[L iC T l iD i S Q S-THOMSON 30 E ]> FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R EL IM IN A R Y DATA ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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-33-l?
BUF405
BUF405A
100KHZ
100KHz
BUF405/405A
NPN Transistor 1A 400V
405a
BUF405
BUF405A
02JJ
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transistor f423
Abstract: sgsf323
Text: 7qgqg37 o o s g is q ^ T * 3 M S SGSF323/IF323 SGSF423/IF423 S G S -T H O M S O N !D=D S G S-THOMSON 30E P FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W ITC H IN G SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ FOR FAST SWITCHING ■ HIGH VOLTAGE FOR OFF-LINE APPLICA
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7qgqg37
SGSF323/IF323
SGSF423/IF423
70kHz
500ms
transistor f423
sgsf323
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SGSF32
Abstract: transistor f421 F421 Transistor
Text: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY
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SGSF321/IF321
SGSF421/IF421
70kHz
500ms
SGSF32
transistor f421
F421 Transistor
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IF444
Abstract: SGSF544
Text: 7 G 2ci537 DGSTlflT Q SGS-THOMSON L i [O T O iD D i P 23.- o SG SF344/IF344 SG SF444/IF444/F544 S G S-THOMSON 3QE D FASTS WITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W IT C H IN G S PEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR O FF-LINE APPLIC A
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SF344/IF344
SF444/IF444/F544
50kHz
500ms
IF444
SGSF544
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