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    NPN 200 VOLTS POWER TRANSISTOR Search Results

    NPN 200 VOLTS POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN 200 VOLTS POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    PDF BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

    BUV21

    Abstract: motorola transistor 0063 Motorola Bipolar Power Transistor Data
    Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


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    PDF BUV21/D* BUV21/D BUV21 motorola transistor 0063 Motorola Bipolar Power Transistor Data

    BUV11

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications.


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    PDF BUV11/D* BUV11/D BUV11

    MJ3281A

    Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
    Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS


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    PDF MJ3281A/D MJ3281A* MJ1302A* MJ3281A MJ1302A 204AA MJ3281A/D* Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor

    BUV21

    Abstract: BUV21G
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    PDF BUV21 BUV21/D BUV21 BUV21G

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    PDF BUV21 BUV21/D

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    PDF BUV21 BUV21/D

    MJ10021 equivalent

    Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
    Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for


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    PDF MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


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    PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


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    PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    BU806 MOTOROLA

    Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


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    PDF BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127

    BU806

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


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    PDF 220AB BU806

    1N4937

    Abstract: MJ10020 MJ10021
    Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS


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    PDF MJ10020/D* MJ10020/D 1N4937 MJ10020 MJ10021

    J802

    Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
    Text: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


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    PDF MJ802 MJ4502 r14525 J802/D J802 MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502

    BUV11

    Abstract: No abstract text available
    Text: ON Semiconductort BUV11 SWITCHMODEt Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE • • min. = 20 at IC = 6 A


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    PDF BUV11 r14525 BUV11/D BUV11

    BUV21

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


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    PDF BUV21 r14525 BUV21/D BUV21

    MJ802

    Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.


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    PDF MJ802/D* MJ802/D MJ802 MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


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    PDF BUV21

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


    OCR Scan
    PDF BUV21/D BUV21

    mje341

    Abstract: MJE-344 mje344
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.


    OCR Scan
    PDF MJE341 MJE344 MJE344 -225AA MJE-344

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan
    PDF BU806/D BU806 -220A 21A-06 O-220AB