MJL3281A MJL1302A
Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
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MJL1302A
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MJL3281A/D
MJL3281A MJL1302A
MJL3281A-D
complementary npn-pnp power transistors
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MJL3281A MJL1302A
Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
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MJL3281A/D
MJL3281A MJL1302A
positioner
complementary npn-pnp power transistors
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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MJL3281A
MJL1302A
MJL3281A*
MJL1302A*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
sec tip41c
MJE493
2SC1419
2sc3281
2n3055 audio output circuit
BDW93
MJ1000
BDW83
buv98a cross reference
2SC1943
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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BUX41
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC1629 equivalent
BDX54
BU326
BU100
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BUV21
Abstract: motorola transistor 0063 Motorola Bipolar Power Transistor Data
Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.
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BUV21/D*
BUV21/D
BUV21
motorola transistor 0063
Motorola Bipolar Power Transistor Data
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BUV11
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications.
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BUV11/D*
BUV11/D
BUV11
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MJ3281A
Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A* Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS
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MJ3281A/D
MJ3281A*
MJ1302A*
MJ3281A
MJ1302A
204AA
MJ3281A/D*
Motorola Bipolar Power Transistor Data
complementary npn-pnp power transistors
transistor pnp 3015
MJ1302
LOW FREQUENCY POWER bipolar npn TRANSISTOR to3
motorola bipolar transistor
Motorola Power Transistor
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BUV21
Abstract: BUV21G
Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:
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BUV21
BUV21/D
BUV21
BUV21G
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Untitled
Abstract: No abstract text available
Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:
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BUV21
BUV21/D
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Untitled
Abstract: No abstract text available
Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:
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BUV21
BUV21/D
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MJ10021 equivalent
Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for
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MJ10020
MJ10021
MJ10020
MJ10021
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MJ10020/D
MJ10021 equivalent
SUS CIRCUIT
1N4937
tektronix 475
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tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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MJ3281A
MJ1302A
MJ3281A*
MJ1302A*
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
tip122 tip127 audio amp
BU108
K 3569
D44H1
tip120
MJ1302A equivalent
2SB595
BDX54
BU326
BU100
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
mje15033 replacement
BU108
TIP41B
MJE2482
x 0602 ma
2SC1419
BU326
BU100
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BU806 MOTOROLA
Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal
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BU806/D*
BU806/D
BU806 MOTOROLA
BU806
motorola darlington power transistor
NT 407 F TRANSISTOR
221A-06
transistor j 127
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BU806
Abstract: No abstract text available
Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal
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220AB
BU806
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1N4937
Abstract: MJ10020 MJ10021
Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS
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MJ10020/D*
MJ10020/D
1N4937
MJ10020
MJ10021
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J802
Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
Text: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •
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MJ802
MJ4502
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J802/D
J802
MJ802 EQUIVALENT
MJ4502 EQUIVALENT
MJ4502
MJ802
transistor mj4502
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BUV11
Abstract: No abstract text available
Text: ON Semiconductort BUV11 SWITCHMODEt Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE • • min. = 20 at IC = 6 A
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BUV11
r14525
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BUV11
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BUV21
Abstract: No abstract text available
Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A
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BUV21
r14525
BUV21/D
BUV21
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MJ802
Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.
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MJ802/D*
MJ802/D
MJ802
MJ802 MOTOROLA
MJ802/D
MJ802-D
MOTOROLA TRANSISTOR
MJ4502
transistor MJ802
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A
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BUV21
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.
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BUV21/D
BUV21
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mje341
Abstract: MJE-344 mje344
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.
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OCR Scan
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PDF
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MJE341
MJE344
MJE344
-225AA
MJE-344
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal
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OCR Scan
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PDF
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BU806/D
BU806
-220A
21A-06
O-220AB
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