NPN 100A Search Results

NPN 100A Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN 100A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor B 892 Abstract: but100 equivalent BUT100 NPN Transistor 100A NPN transistor Ic 50A npn transistor high current Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN	Original	BUT100 BUT100 transistor B 892 but100 equivalent NPN Transistor 100A NPN transistor Ic 50A npn transistor high current	PDF
BUT100 Abstract: but100 equivalent transistor B 892 Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN	Original	BUT100 BUT100 but100 equivalent transistor B 892	PDF
but100 Abstract: No abstract text available Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION ■ MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN	Original	BUT100 BUT100	PDF
BUT100 Abstract: No abstract text available Text: BUT100 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL ■ UNINTERRUPTABLE POWER SUPPLY ■ DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN	Original	BUT100 BUT100	PDF
DARLINGTON 30A 100V npn Abstract: TO3 package PMD18D100 darlington 300w 2.2KW Text: SEME PMD18D100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 100A PEAK 300 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18D100 is an NPN Darlington	Original	PMD18D100 PMD18D100 100mA 300ms, DARLINGTON 30A 100V npn TO3 package darlington 300w 2.2KW	PDF
740C3 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y	Original	MX0912B100Y; MZ0912B100Y MX0912B100Y OT439 OT443 740C3	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES	Original	MX0912B100Y; MZ0912B100Y SCA53 127147/00/02/pp12	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y	Original	MX0912B100Y; MZ0912B100Y	PDF
MX0912B100Y Abstract: MZ0912B100Y philips capacitor 470 Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y	Original	MX0912B100Y; MZ0912B100Y SCA53 127147/00/02/pp12 MX0912B100Y MZ0912B100Y philips capacitor 470	PDF
MX0912B351Y Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A	Original	MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y	PDF
MX0912B251Y Abstract: capacitor 470 uF Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A	Original	MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF	PDF
epsilam 10 Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16	PDF
transistor 359 AJ Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides	Original	MZ0912B50Y SCA53 127147/00/02/pp12 transistor 359 AJ	PDF
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239	PDF

philips ferrite material specifications Abstract: BD239 BY239 LXE15450X SC15 mlc444 Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor	Original	LXE15450X SCA53 127147/00/02/pp12 philips ferrite material specifications BD239 BY239 LXE15450X SC15 mlc444	PDF
MZ0912B50Y Abstract: MGL050 Text: DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides	Original	MZ0912B50Y SCA53 127147/00/02/pp12 MZ0912B50Y MGL050	PDF
BFG480W Abstract: BC817 RF POWER TRANSISTOR NPN 3GHz Text: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 1998 Jul 09 Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W FEATURES	Original	M3D124 BFG480W SCA60 125104/00/02/pp16 BFG480W BC817 RF POWER TRANSISTOR NPN 3GHz	PDF
epsilam 10 Abstract: BDT91 BY239 LFE15600X Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LFE15600X SCA53 127147/00/02/pp12 epsilam 10 BDT91 BY239 LFE15600X	PDF
LLE16350X Abstract: BDT91 BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE16350X SCA53 127121/00/04/pp12 LLE16350X BDT91 BY239	PDF
diode BY239 Abstract: BD239 BY239 LLE16045X Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X	PDF
BDT91 Abstract: BY239 LLE15180X MBD738 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15180X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE15180X SCA53 127121/00/02/pp12 BDT91 BY239 LLE15180X MBD738	PDF
philips ferrite 4b1 Abstract: 12NC philips BDT91 BY239 LLE18300X Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18300X SCA63 125002/00/03/pp12 philips ferrite 4b1 12NC philips BDT91 BY239 LLE18300X	PDF
equivalent of SL 100 NPN Transistor Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA	Original	M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR	PDF
bdl 40 Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W Text: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor	OCR Scan	BFG480W BFG480W SCA60 04/00/02/pp1 bdl 40 l43 transistor transistor marking 2d ghz 9335 895	PDF

NPN 100A Search Results

NPN 100A Result Highlights (5)

NPN 100A Datasheets Context Search

transistor B 892

BUT100

but100

BUT100

DARLINGTON 30A 100V npn

740C3

Untitled

Untitled

MX0912B100Y

MX0912B351Y

MX0912B251Y

epsilam 10

transistor 359 AJ

epsilam 10

philips ferrite material specifications

MZ0912B50Y

BFG480W

epsilam 10

LLE16350X

diode BY239

BDT91

philips ferrite 4b1

equivalent of SL 100 NPN Transistor

bdl 40