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    NPN 1.5 AMPS POWER TRANSISTOR Search Results

    NPN 1.5 AMPS POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    NPN 1.5 AMPS POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A PDF

    MJW21196

    Abstract: No abstract text available
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21195 MJW21196 MJW21195 MJW21196 PDF

    MJL3281A

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJL3281A MJL1302A MJL3281A MJL1302A PDF

    MJW2119x

    Abstract: No abstract text available
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21193 MJW21194 MJW21193 MJW21194 MJW2119x PDF

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 PDF

    complementary npn-pnp power transistors

    Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
    Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D complementary npn-pnp power transistors MJW1302AG MJW3281AG PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


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    MJ21195 MJ21196 MJ21195 MJ21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR PDF

    MJW1302A

    Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D MJW1302AG MJW3281AG complementary npn-pnp power transistors TO-247 PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: mjl21195
    Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •


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    MJL21195 MJL21196 MJL21195 MJL21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR PDF

    transistor MJL21194

    Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
    Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


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    MJL21193 MJL21194 MJL21193* MJL21194* MJL21194 transistor MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193 PDF

    MJW21195

    Abstract: MJW21195G MJW21196 MJW21196G pnp matched pair
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21195 MJW21196 MJW21195 MJW21196 MJW21195/D MJW21195G MJW21196G pnp matched pair PDF

    MJW21195

    Abstract: MJW21195G MJW21196 MJW21196G
    Text: MJW21195 PNP MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features •


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    MJW21195 MJW21196 MJW21195 MJW21196 MJW21195/D MJW21195G MJW21196G PDF

    MJL1302A

    Abstract: MJL1302AG MJL3281A MJL3281AG complementary npn-pnp
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D MJL1302AG MJL3281AG complementary npn-pnp PDF

    MJW21193

    Abstract: MJW21193G MJW21194 MJW21194G
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D MJW21193G MJW21194G PDF

    MJW21193

    Abstract: MJW21193G MJW21194 MJW21194G
    Text: MJW21193 PNP MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized


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    MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D MJW21193G MJW21194G PDF

    MJL31193

    Abstract: MJL31194
    Text: MJL31193 PNP MJL31194 (NPN) Preferred Devices Product Preview Complementary PNP−NPN Silicon Power Transistors http://onsemi.com The MJL31193 and MJL31194 are PowerBaset transistors that are specifically designed for high power audio output. 20 AMPERE COMPLEMENTARY


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    MJL31193 MJL31194 MJL31193 MJL31194 PDF

    MJ31193

    Abstract: MJ31194 100 watts IC audio amplifier circuit diagram mj311
    Text: MJ31193 PNP MJ31194 (NPN) Preferred Devices Product Preview Complementary PNP−NPN Silicon Power Transistors http://onsemi.com The MJ31193 and MJ31194 are PowerBaset transistors that are specifically designed for high power audio output. 20 AMPERE COMPLEMENTARY


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    MJ31193 MJ31194 MJ31193 MJ31194 100 watts IC audio amplifier circuit diagram mj311 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


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    MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    MJ21195G

    Abstract: MJ2119x MJ21195 MJ21196 MJ21196G npn 10000
    Text: MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJ21195 MJ21196 MJ21195/D MJ21195G MJ2119x MJ21196G npn 10000 PDF

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors PDF

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


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    7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240 PDF

    692B

    Abstract: 694B ZTX690B
    Text: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 500 min. Up to 3 am ps continuous current Gain specified up to 6 amps 1.5 w att pow er dissipation at


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    ZTX689B ZTX690B ZTX692B ZTX694B 30CVs. 692B 694B PDF

    sn76544

    Abstract: BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440
    Text: BUY71 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T. S C A N N IN G • • V q e x Rating 2200 V Current Rating — 2 Amps Continuous • Fast Switching — tf at 1.5 Amps 0.7 Microsecond Typical @ 25 °C Case Temperature mechanical specification


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    BUY71 sn76544 BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440 PDF