NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
NPN 1.5 AMPS POWER TRANSISTOR
MJW-1302A
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MJW21196
Abstract: No abstract text available
Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJW21195
MJW21196
MJW21195
MJW21196
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MJL3281A
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJL3281A
MJL1302A
MJL3281A
MJL1302A
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MJW2119x
Abstract: No abstract text available
Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJW21193
MJW21194
MJW21193
MJW21194
MJW2119x
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2N3773 NPN Audio Power AMP Transistor
Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25
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OT-223
O-225AA
O-126)
O-220AB
O-220
O-218
O-247
O-264
O-204AA
O-204AE
2N3773 NPN Audio Power AMP Transistor
2N5192 BD441
mje15034
mj150* darlington
transistor MJ15025
transistor Mj21194
TIP2955 application note
MJ31193
mjl4281
MJE18006
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complementary npn-pnp power transistors
Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
O-247
MJW3281A/D
complementary npn-pnp power transistors
MJW1302AG
MJW3281AG
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: No abstract text available
Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJ21195
MJ21196
MJ21195
MJ21196
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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MJW1302A
Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
O-247
MJW3281A/D
MJW1302AG
MJW3281AG
complementary npn-pnp power transistors
TO-247
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: mjl21195
Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •
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MJL21195
MJL21196
MJL21195
MJL21196
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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transistor MJL21194
Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193
Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJL21193
MJL21194
MJL21193*
MJL21194*
MJL21194
transistor MJL21194
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
transistor mjl21193
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MJW21195
Abstract: MJW21195G MJW21196 MJW21196G pnp matched pair
Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJW21195
MJW21196
MJW21195
MJW21196
MJW21195/D
MJW21195G
MJW21196G
pnp matched pair
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MJW21195
Abstract: MJW21195G MJW21196 MJW21196G
Text: MJW21195 PNP MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features •
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MJW21195
MJW21196
MJW21195
MJW21196
MJW21195/D
MJW21195G
MJW21196G
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MJL1302A
Abstract: MJL1302AG MJL3281A MJL3281AG complementary npn-pnp
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJL3281A
MJL1302A
MJL3281A
MJL1302A
MJL3281A/D
MJL1302AG
MJL3281AG
complementary npn-pnp
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MJW21193
Abstract: MJW21193G MJW21194 MJW21194G
Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJW21193
MJW21194
MJW21193
MJW21194
MJW21193/D
MJW21193G
MJW21194G
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MJW21193
Abstract: MJW21193G MJW21194 MJW21194G
Text: MJW21193 PNP MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized
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MJW21193
MJW21194
MJW21193
MJW21194
MJW21193/D
MJW21193G
MJW21194G
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MJL31193
Abstract: MJL31194
Text: MJL31193 PNP MJL31194 (NPN) Preferred Devices Product Preview Complementary PNP−NPN Silicon Power Transistors http://onsemi.com The MJL31193 and MJL31194 are PowerBaset transistors that are specifically designed for high power audio output. 20 AMPERE COMPLEMENTARY
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MJL31193
MJL31194
MJL31193
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MJ31193
Abstract: MJ31194 100 watts IC audio amplifier circuit diagram mj311
Text: MJ31193 PNP MJ31194 (NPN) Preferred Devices Product Preview Complementary PNP−NPN Silicon Power Transistors http://onsemi.com The MJ31193 and MJ31194 are PowerBaset transistors that are specifically designed for high power audio output. 20 AMPERE COMPLEMENTARY
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MJ31193
MJ31194
MJ31193
MJ31194
100 watts IC audio amplifier circuit diagram
mj311
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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power transistors cross reference
Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products
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MJW16212
225AA)
MJE13003
BUH51
power transistors cross reference
motorola AN485
transistor master replacement guide
buv18a
motorola bipolar transistor GUIDE
electronic ballast with MJE13003
mj150* darlington
BUV488
mje15033 replacement
bd135 TRANSISTOR REPLACEMENT GUIDE
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MJ21195G
Abstract: MJ2119x MJ21195 MJ21196 MJ21196G npn 10000
Text: MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
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MJ21195
MJ21196
MJ21195/D
MJ21195G
MJ2119x
MJ21196G
npn 10000
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MJL3281A MJL1302A
Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
r14525
MJL3281A/D
MJL3281A MJL1302A
MJL3281A-D
complementary npn-pnp power transistors
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Darlington npn stud mount
Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25
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7Hc14ti51i
MT-52
MT-33
Darlington npn stud mount
TO82
2N3429
2N6840
2N1015
2N1016
2N3470-73
TO82 package
40240
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692B
Abstract: 694B ZTX690B
Text: NPN Silicon Planar Medium Power High Gain Transistors ZTX689B ZTX690B ZTX692B ZTX694B PRELIMINARY INFORMATION FEATURES • • • • • • High gain — 500 min. Up to 3 am ps continuous current Gain specified up to 6 amps 1.5 w att pow er dissipation at
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ZTX689B
ZTX690B
ZTX692B
ZTX694B
30CVs.
692B
694B
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sn76544
Abstract: BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440
Text: BUY71 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T. S C A N N IN G • • V q e x Rating 2200 V Current Rating — 2 Amps Continuous • Fast Switching — tf at 1.5 Amps 0.7 Microsecond Typical @ 25 °C Case Temperature mechanical specification
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BUY71
sn76544
BUY71
BP 40 Datenblatt
TIP 21 transistor
TIP 35 transistor
TRANSISTOR buy71
2N3440
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