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    NPN, TRANSISTOR, SC 103 B Search Results

    NPN, TRANSISTOR, SC 103 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
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    NPN, TRANSISTOR, SC 103 B Price and Stock

    TE Connectivity V23542C1028Z100

    Automotive Connector Caps and Covers
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com V23542C1028Z100 151
    • 1 $0.4736
    • 10 $0.4736
    • 100 $0.4305
    • 1000 $0.3498
    • 10000 $0.302
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    RAF Electronic Hardware 2105-632-B

    Standoff Standard Double Female, Brass
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    Onlinecomponents.com 2105-632-B 130
    • 1 -
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    • 100 $1.04
    • 1000 $0.338
    • 10000 $0.276
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    TE Connectivity KUP-14A35-240

    Power Relay - Enclosed - 3 form C (3 CO) - 240VAC Coil - 10A Contact Rating - 240VAC Switching - 0.187" (4.7mm) Quick Connect / Plug In - Socketable.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KUP-14A35-240 103
    • 1 $78.93
    • 10 $77.74
    • 100 $40.46
    • 1000 $27.78
    • 10000 $27.78
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    TE Connectivity R40-E2Y4-V800

    Relay - 2A at 28VDC/120VAC - 24VDC 800 Ohms Coil - 15 Blade.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com R40-E2Y4-V800 103
    • 1 $418.83
    • 10 $418.83
    • 100 $284.94
    • 1000 $227.92
    • 10000 $227.92
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    TE Connectivity P40P47D14P1-24

    Electromechanical Contactor 24VDC 84Ohm 40A 4PST-NO-DM(96.52x91.44x100.97)mm Flange Contactor Relay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com P40P47D14P1-24 103
    • 1 $306.23
    • 10 $276.88
    • 100 $276.88
    • 1000 $276.88
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    Find more NPN, TRANSISTOR, SC 103 B price and stock on Findchips.com

    NPN, TRANSISTOR, SC 103 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mj15052

    Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
    Text: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of


    Original     		AN930 AN930/D hull111111 mj15052 mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)


    Original     		PUB4311 PU4311) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)


    Original     		PUB4311 PU4311) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open)


    Original     		PUB4320 PU4320) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO


    Original     		PUB4320 PU4320) PDF

    LM358 op amp

    Abstract: BDV65A LM358 V48B28C250A Darlington NPN 250W
    Text: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or


    Original     		to110% LM358 LM358 op amp BDV65A V48B28C250A Darlington NPN 250W PDF

    BDV55A

    Abstract: LM358 op amp Lm358
    Text: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or


    Original     		to110% LM358 BDV55A LM358 op amp PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4325 PU4325 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 ■ Absolute Maximum Ratings TC = 25°C NPN Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage


    Original     		PUB4325 PU4325) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4325 PU4325 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage (Base open) VCEO 60±10 V Emitter-base voltage


    Original     		PUB4325 PU4325) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4117 PU4117 , PUB4417 (PU4417) Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PUB4117 PU4117) PUB4417 PU4417) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating


    Original     		PUA3111 PU3111) PUA3211 PU3211) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PUA3110 PU3110) PUA3210 PU3210) PDF

    PU4118

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4118 PU4118 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features 25.3±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage (Base open)


    Original     		PUB4118 PU4118) PU4118 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4118 PU4118 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage (Base open)


    Original     		PUB4118 PU4118) PDF

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PUA3119 PU3119) PUA3219 PU3219) PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PUA3120 PU3120) PUA3220 PU3220) PDF

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60


    Original     		PUA3120 PU3120) PUA3220 PU3220) PDF

    sem 2106

    Abstract: bux13
    Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.


    OCR Scan     		BUX13 AN415A) sem 2106 bux13 PDF

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures


    OCR Scan     		bb53c 002S3bb BFT25A BFT25A PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M PDF

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


    OCR Scan     		MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68 PDF

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


    OCR Scan     		PDF