NC410
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N075CUE, NP84N075DUE, NP84N075EUE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION NP84N075CUE, NP84N075DUE, NP84N075EUE are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP84N075CUE,
NP84N075DUE,
NP84N075EUE
NP84N075EUE
NP84N075CUE
NP84N075DUE
O-220AB
O-262
NC410
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NP84N075KUE
Abstract: MP-25 NP84N075CUE NP84N075DUE NP84N075EUE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N075CUE,NP84N075DUE,NP84N075EUE,NP84N075KUE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE Transistor designed for high current switching NP84N075CUE TO-220AB applications.
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NP84N075CUE
NP84N075DUE
NP84N075EUE
NP84N075KUE
NP84N075CUE
O-220AB
NP84N075DUE
O-262
NP84N075EUE
O-263
NP84N075KUE
MP-25
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N075CUE, NP84N075DUE, NP84N075EUE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP84N075CUE,
NP84N075DUE,
NP84N075EUE
NP84N075CUE
NP84N075DUE
NP84N075EUE
O-220AB
O-262
O-263
O-220AB)
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84N075
Abstract: NP84N075MUE NP84N075CUE NP84N075DUE NP84N075EUE NP84N075EUE-E1-AY NP84N075EUE-E2-AY NP84N075KUE NP84N075KUE-E1-AY NP84N075KUE-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N075EUE, NP84N075KUE NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP84N075EUE,
NP84N075KUE
NP84N075CUE,
NP84N075DUE,
NP84N075MUE,
NP84N075NUE
NP84N075EUE-E1-AY
NP84N075EUE-E2-AY
NP84N075KUE-E2-AY
NP84N075KUE-E1-AY
84N075
NP84N075MUE
NP84N075CUE
NP84N075DUE
NP84N075EUE
NP84N075EUE-E1-AY
NP84N075EUE-E2-AY
NP84N075KUE
NP84N075KUE-E1-AY
NP84N075KUE-E2-AY
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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NP84N075MUE
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NP84N075MUE
Abstract: NP84N075CUE NP84N075DUE NP84N075EUE NP84N075EUE-E1-AY NP84N075EUE-E2-AY NP84N075KUE NP84N075KUE-E1-AY NP84N075KUE-E2-AY NP84N075NUE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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IR260/WS260/HS350
IR260/HS350
mc10087f1
mc-10041
mc-10043
MC-10087F1-XXX
MC-10044
MC-10051BF1
2SC5664
2SC5292
UPC1701C
mc-10059
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
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TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
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Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
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