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Renesas Electronics Corporation NP35N04YUG-E1-AY MOSFET N-CH 40V 35A 8HSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NP35N04YUG-E1-AY	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.7	Buy Now
Renesas Electronics Corporation NP35N055YUK-E1-AY MOSFET N-CH 55V 35A 8HSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NP35N055YUK-E1-AY	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.67	Buy Now
Avnet Americas	NP35N055YUK-E1-AY	Reel		18 Weeks	2,500	1 $0.715 10 $0.715 100 $0.715 1000 $0.715 10000 $0.715	Buy Now
Renesas Electronics Corporation NP35N04YLG-E1-AY ABU / MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NP35N04YLG-E1-AY	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.70625	Buy Now
	NP35N04YLG-E1-AY	Cut Tape	2,355		1	1 $1.71 10 $1.428 100 $1.71 1000 $0.80555 10000 $0.80555	Buy Now
Avnet Americas	NP35N04YLG-E1-AY	Reel		18 Weeks	2,500	1 $0.754 10 $0.754 100 $0.754 1000 $0.754 10000 $0.754	Buy Now
Mouser Electronics	NP35N04YLG-E1-AY		2,495			1 $1.68 10 $1.4 100 $1.12 1000 $0.799 10000 $0.706	Buy Now
Avnet Silica	NP35N04YLG-E1-AY			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics VNP35N07-E IC PWR DRIVER N-CHAN 1:1 TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VNP35N07-E	Tube	714		1	1 $5.46 10 $5.46 100 $5.46 1000 $2.24612 10000 $2.24612	Buy Now
Avnet Americas	VNP35N07-E	Tube		13 Weeks	1,000	1 - 10 - 100 - 1000 $2.27456 10000 $2.13917	Buy Now
STMicroelectronics	VNP35N07-E		4,356		1	1 $5.24 10 $5.23 100 $2.68 1000 $2.25 10000 $2.25	Buy Now
TME	VNP35N07-E		397		1	1 $4.14 10 $3.61 100 $2.66 1000 $2.66 10000 $2.66	Buy Now
Avnet Silica	VNP35N07-E		40,350	14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	VNP35N07-E		3,800	14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	VNP35N07-E		7,037			1 - 10 - 100 - 1000 - 10000 -	Get Quote
KEMET Corporation ALS31G682NP350 CAP ALUM SCREW TERM 85C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ALS31G682NP350	Box	115		1	1 $56.37 10 $56.37 100 $56.37 1000 $37.46778 10000 $37.46778	Buy Now
Newark	ALS31G682NP350	Bulk			96	1 - 10 - 100 $36.08 1000 $36.08 10000 $36.08	Buy Now

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NP35 Datasheets (45)

Part	Manufacturer	Description	Datasheet Type	PDF
NP3500SAT3G	On Semiconductor	350V 50A TSPD; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500	Original	PDF
NP3500SB1T3G	On Semiconductor	IC THY SURGE PROTECTOR 330V SMB	Original	PDF
NP3500SBMCT3G	On Semiconductor	NP3500 - Silicon Surge Protector, 400 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA, ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN	Original	PDF
NP3500SBT3G	On Semiconductor	350V 80A TSPD; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500	Original	PDF
NP3500SCG	On Semiconductor	IC THY SURGE PROTECTOR 350V SMB	Original	PDF
NP3500SCMCT3G	On Semiconductor	Low Cap TSPD Surge Devices	Original	PDF
NP3500SCT3G	On Semiconductor	350V 100A TSPD; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500	Original	PDF
NP352-04808	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-04811	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-04813	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-1008-39	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-103	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-115523	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-115523.AC-22615	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF

NP352-1206-38	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-1206-38AC-28934	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-129636	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-1296-52	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-152124	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF
NP352-1521-53	Yamaichi Electronics	Fine Ball Grid Array (FBGA, 1.00mm Pitch)	Original	PDF

NP35 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)	Original	NP35N04YUG R07DS0016EJ0100 NP35N04YUG AEC-Q101	PDF
socket 1155 Abstract: 1155 socket NP352-676-103 NP352-76814 45x45 mm bga X2933 35x35 bga 45x45 bga NP352-103 ac294 Text: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) Specifications NP352 - 560 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:	Original	NP352 10mA/20mV NP352-1600-54-* NP352-160018 45x45 NP352-1849-35 NP352-106426 socket 1155 1155 socket NP352-676-103 NP352-76814 45x45 mm bga X2933 35x35 bga 45x45 bga NP352-103 ac294	PDF
NP3502 Abstract: NP3502(R) thru NP3506(R) Text: NP3502 R thru NP3506(R) Naina Semiconductor Ltd. Press Fit Diode, 35A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability Mechanical Characteristics • • • • • Chip: Gpp Chip Encapsulation: Epoxy Sealed	Original	NP3502 NP3506 1050C NP3502(R) thru NP3506(R)	PDF
NP3520 Abstract: NP3520(R) thru NP3534(R) Text: NP3520 R thru NP3534(R) Naina Semiconductor Ltd. TVS Auto Rectifier, 35A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability Mechanical Characteristics • • • • Encap: Epoxy Sealed Lead: Plated Lead, Solderable	Original	NP3520 NP3534 NP3520(R) thru NP3534(R)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)	Original	NP35N04YLG R07DS0182EJ0100 NP35N04YLG AEC-Q101	PDF
NP351 Abstract: NP351-16914 NP351-28508 FBGA 1760 65113 NP351 yamaichi Text: NP351 Series Open Top Fine Ball Grid Array (FBGA) Part Number (Details) NP351 - 120 14 - * - * Specifications Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: 1,000MΩ min. at 100V DC	Original	NP351 10mA/20mV NP351-16914 NP351-28508 FBGA 1760 65113 NP351 yamaichi	PDF
48031 Abstract: No abstract text available Text: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 456 66 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.	Original	NP352 10mA/20mV NP352-1008-39 00x42 48031	PDF
specifications of ic 740 Abstract: IC 740 Text: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 1521 24 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.	Original	NP352 10mA/20mV 00x39 NP352-1849-35 00x42 specifications of ic 740 IC 740	PDF
X3329 Abstract: NP352 NP352-40025 Text: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 345 34 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.	Original	NP352 10mA/20mV NP352-436-68 X3329 NP352-40025	PDF
NP351 Abstract: NP351-064-148 NP351-180-139 212207 NP351-21653 NP351-064-227 X3640 np351-532 AC-28179 ac14425 Text: Series NP351 BGA / CSP 0.80mm Pitch TH - Open Top Specifications Part Number (Details) Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: Mating Cycles: 1,000MΩ min. at 100V DC 100V AC for 1 minute	Original	NP351 10mA/20mV NP351 NP351-064-148 NP351-180-139 212207 NP351-21653 NP351-064-227 X3640 np351-532 AC-28179 ac14425	PDF
NP352-115523 Abstract: No abstract text available Text: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 1064 26 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.	Original	NP352 10mA/20mV NP352-1206-38 00x35 NP352-115523	PDF
NP351-064-148 Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230 Text: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:	Original	NP351 10mA/20mV CP351-30413-* NP351-30431-* NP351-43216-* NP351-52009-* NP351-532-83-* NP351-064-148 NP351-18464 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230	PDF
NP35N04YUG Abstract: No abstract text available Text: Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)	Original	NP35N04YUG R07DS0016EJ0100 NP35N04YUG AEC-Q101	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet NP35N055YUK R07DS1002EJ0100 Rev.1.00 Feb 08, 2013 55 V – 35 A – N-channel Power MOS FET Application: Automotive Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.	Original	NP35N055YUK R07DS1002EJ0100 NP35N055YUK AEC-Q101 NP35N055YUK-E1-AY NP35N055YUK-E2-AY	PDF

NP35N04YLG Abstract: No abstract text available Text: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)	Original	NP35N04YLG R07DS0182EJ0100 NP35N04YLG AEC-Q101	PDF
NP351 Abstract: NP351 yamaichi NP3510 yamaichi IC Test Socket Text: µBGAª Open top NP351 Series Arrays Characteristics 1,000M½or more at 100 VDC 700 VAC for 1 Minute 100m½ or less at 10mA/20mV (Initial) -55ûC ~ +170ûC Material PEI (Glass Filled) Beryllium Copper Gold over Nickel Insulator: Contact: Plating: NP351- 196 02- *	Original	NP351 10mA/20mV NP351- NP351 NP351-06024- NP351-10820- NP351-11215-* NP351-12114 NP351-14422 NP351-15208-* NP351 yamaichi NP3510 yamaichi IC Test Socket	PDF
MCM65256-35 Abstract: LGA Application Notes motorola MCM65256 Text: fà MOTOROLA SEM ICO NDUCTO RS MCM65256 3501 ED B LU ESTEIN BLVD., A U S TIN , TEXAS 78721 Product P re v ie w HCMOS 2 5 6 K B IT R E A D O N L Y M E M O R Y (C O M P L E M E N T A R Y M O S T h e M C M 6 5 2 5 6 is a c o m p te rp e n ta ry M O S m a s k -p ro g ra m m a b le byte o rg a n ize d Read O n ly M e m o ry (R O M ). T he M C M p 5 2 5 6 is o rg a n ize d as	OCR Scan	MCM65256 MCMp5256 MCM65256-35 LGA Application Notes motorola	PDF
NP0640SAT3G Abstract: 403C NP0640SBT3G NP0640SCT3G NP0720SAT3G NP0720SBT3G NP0720SCT3G NP0900SAT3G NP0900SBT3G NP1500SC-T3G Text: NP Series Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional NP Series Thyristor Surge Protector Devices TSPD protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are	Original	GR-1089-CORE, TIA-968-A, NP0640S/D NP0640SAT3G 403C NP0640SBT3G NP0640SCT3G NP0720SAT3G NP0720SBT3G NP0720SCT3G NP0900SAT3G NP0900SBT3G NP1500SC-T3G	PDF
Untitled Abstract: No abstract text available Text: NP-SE Series Product Preview 140A, TSPD The NP−SE series of Thyristor Surge Protection Devices TSPD protect sensitive electronic equipment from transient overvoltage conditions. They offer the designer a more robust alternative to the standard 100 A rated devices.	Original	10x1000ms NP0640SE/D	PDF
2sk4145 Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current	Original	SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919	PDF
2sk4145 Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)	Original	SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080	PDF
IC51-128 Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005 Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials	Original		PDF
LGA 1156 PIN OUT diagram Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)	Original	DIP8-P-300-2 DIP14-P-300-2 DIP16-P-300-2 DIP18-P-300-2 MIL-M-38510 MIL-STD-883 LGA 1156 PIN OUT diagram QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram	PDF
CO2V Abstract: NP0720SAMCT3G NP0640SAMCT3G Text: NP-SAMC Series 50A, Ultra Low Capacitance TSPD The NP−SAMC series of Low Capacitance Thyristor Surge Protection Devices TSPD protect sensitive electronic equipment from transient overvoltage conditions. Due to their ultra low off−state capacitance (Co), they offer minimal signal distortion for high speed	Original	GR-1089-CORE, TIA-968-A, NP0640SC/D CO2V NP0720SAMCT3G NP0640SAMCT3G	PDF

NP35 Search Results

NP35 Price and Stock

Renesas Electronics Corporation NP35N04YUG-E1-AY

Renesas Electronics Corporation NP35N055YUK-E1-AY

Renesas Electronics Corporation NP35N04YLG-E1-AY

STMicroelectronics VNP35N07-E

KEMET Corporation ALS31G682NP350

NP35 Datasheets (45)

NP35 Datasheets Context Search

Untitled

socket 1155

NP3502

NP3520

Untitled

NP351

48031

specifications of ic 740

X3329

NP351

NP352-115523

NP351-064-148

NP35N04YUG

Untitled

NP35N04YLG

NP351

MCM65256-35

NP0640SAT3G

Untitled

2sk4145

2sk4145

IC51-128

LGA 1156 PIN OUT diagram

CO2V