Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NON-VOLATILE RANDOM ACCESS MEMORY Search Results

    NON-VOLATILE RANDOM ACCESS MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    NON-VOLATILE RANDOM ACCESS MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Marvell DragonFly NVRAM Second-Generation, High-Performance Non-Volatile DRAM Write Cache PRODUCT OVERVIEW The Marvell DragonFly NVRAM, part of the DragonFly platform family, delivers a high-performance 3.2 gigabytes-per-second GB/s Non-Volatile Dynamic Random Access Memory (NVRAM) write cache solution for low latency and IOPS-intensive applications. DragonFly


    Original     		PDF NVRAM-02

    water level control block diagram

    Abstract: NVSRAM "Ferroelectric RAM" EEPROM COPIER circuit Using nvsRAM in RAID Controller Applications
    Text: Non-Volatile Static Random Access Memory NVSRAM - High Speed Nonvolatility By S. Vinayaka Babu, Product Marketing Engineer Staff, and Pramodh Prakash, Application Engineer, Cypress Semiconductor Corp. Introduction Memories are an integral part of any electronic system/application. They can be broadly classified as volatile memories (lose


    Original     		PDF

    non volatile ferroelectric memory

    Abstract: SYFR8128FK-15 SYFR8128FK
    Text: 128K x 8 FRAM SYFR8128FK-15 Issue 1.0 August 2001 Description The SYFR8128FK is a 2.7~3.6V 1Mbit non volatile memory module employing advanced ferroelectric devices. A ferroelectric random access memory or FRAM is nonvolatile but operates similar to SRAM.


    Original     		PDF SYFR8128FK-15 SYFR8128FK 150ns SYFR8128FKI non volatile ferroelectric memory SYFR8128FK-15

    NVSRAM

    Abstract: PDIP32 U632H64 U634H256
    Text: Product Summary nvSRAM nvSRAM: SRAM and EEPROM within a single Chip Author: Dr. Stefan Günther Dr. Steffen Buschbeck Heiko Roeper Powerful processor systems which place high demands on reliability require optimum data storage systems. The nvSRAM non-volatile Static Random Access Memory now available


    Original     		PDF

    fram

    Abstract: MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R
    Text: AN app note FRAM MCU Key Strengths and Applications Introduction0 Fujitsu’s Ferroelectric Random Access Memory FRAM microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be


    Original     		PDF FRAM-AN-21377-09/2010 fram MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-4E MB85R1001 MB85R1001 F0704

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-2E MB85R1002 MB85R1002 F0701

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-8E MB85R1001 MB85R1001

    PSEUDO SRAM

    Abstract: MB85R1002 din 3102
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-4Ea MB85R1002 MB85R1002 PSEUDO SRAM din 3102

    MB85R2001

    Abstract: MB85R2001PFTN-GE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-2E MB85R2001 MB85R2001 F0709 MB85R2001PFTN-GE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13108-1E MB85R2002 MB85R2002 F0704

    8085 microprocessor ram 4k

    Abstract: microprocessor Rockwell R6500 8051 TLx rockwell 6500
    Text: R2000 Memory Products 64 * Rockwell X R2000 8 NON-VOLATILE RAM ^ 6 Product Preview DESCRIPTION FEATURES The Rockwell R2000 Non-Volatile Random Access Memory NVRAM is a conventional 64 x 8 static random access memory (RAM) overlaid bit-for-bit with a 64 x 8 non-voltatile


    OCR Scan     		PDF R2000 R2000 10-Year R6500, R65C00, R65C00/21, R6500/41 8085 microprocessor ram 4k microprocessor Rockwell R6500 8051 TLx rockwell 6500

    221220

    Abstract: mbm2212-20 MBM2212-25 X2212
    Text: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 December 1987 Edition 3.0 1024-BIT NON-VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry


    OCR Scan     		PDF 1024-BIT MBM2212-20 500mV MBM2212-25 18-pin 18-LEAD 221220 X2212

    MBM2212-25

    Abstract: No abstract text available
    Text: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 D ecem b er 1 9 8 7 E d itio n 3 .0 1024-BIT NON VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry


    OCR Scan     		PDF 1024-BIT 18-pin MBM2212-20 MBM2212-25 MBM2212-25

    SRM2114C25

    Abstract: SRM2114C-25 SRM2114C srm2114 2114T25
    Text: SRM2114Ï25 CMOS 4K-BIT STATIC RAM I DESCRIPTION The SRM2114T25is a 1,024 words x 4 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby current consumption makes it ideal for applications requiring non-volatile storage with


    OCR Scan     		PDF SRM2114 SRM2114T25is SRM2114T25 250ns SRM211425 SRM2114M25 SRM2114C25. 2114T25 SRM2114C25 SRM2114C-25 SRM2114C 2114T25

    SRM-2016

    Abstract: SRM2016C SRM2016
    Text: SRM2016 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM201612 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with


    OCR Scan     		PDF SRM2016 16K-BIT SRM201612 120ns OI612 SRM201 SRM2016Cis. SRM2016Ci2. 375mil 450mil. SRM-2016 SRM2016C SRM2016

    Untitled

    Abstract: No abstract text available
    Text: SRM201OOI-70/85/10 CMOS 1M-BIT STATIC RAM DESCRIPTION The SRM201 OOIjws&'io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


    OCR Scan     		PDF SRM201OOI-70/85/10 SRM201 SRM20100L SRM20100Lio 100ns 32-pin UUUUUUL11JUUU1I11UU11 SRM20100LTM7o

    Untitled

    Abstract: No abstract text available
    Text: EPSON SRM20116LF85/10 1 M-Bit Static RAM • Low Supply Current • Access Time 85ns/100ns • 65,536 Wordsxl 6-Bit Asynchronous • DESCRIPTION The SRM20116LF85/10 is a 65,536 wordsxl 6-bit asynchronous, static, random access memory on a monolithic CMOS chip.Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


    OCR Scan     		PDF SRM20116LF85/10 85ns/100ns SRM20116LF85/10

    SRM2264LCT

    Abstract: 2264L SRM2264
    Text: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with


    OCR Scan     		PDF SRM2264L 64K-BIT 100ns/120ns SRM2264Lio/i2 SRM2264Lio 100ns 120ns 100ns SRM2264LCT 2264L SRM2264

    76C28A-10

    Abstract: 76C28 GM76C28A-10 76C28A
    Text: GM76C28A GoldStar GOLDSTAR ELECTRON CO., LTD. Description The GM76C28A is 2,048 words x 8 bits asyn­ chronous, static random access memory on a monolithic CMOS chip. Its very low standby pow­ er requirement makes it ideal for applications re­ quiring non-volatile storage with back-up


    OCR Scan     		PDF GM76C28A GM76C28A 76C28A-10 76C28 GM76C28A-10 76C28A

    SRM2564M

    Abstract: SRM25
    Text: SRM2564 CMOS 64K-BIT STATIC RAM • Low Voltage and Low Supply Current • Access Time 1,000ns • 8,192 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2564 is an 8,192 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with


    OCR Scan     		PDF SRM2564 64K-BIT 000ns SRM2564 DIP-28pin OP2-28pin SRM2564M SRM25

    SRM2017C12

    Abstract: SRM2017C SRM2017C10 SRM2017
    Text: PF299-02 SRM2017C10/12 CMOS 16K-BIT STATIC RAM •L o w Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM2017C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile


    OCR Scan     		PDF SRM2017C PF299-02 16K-BIT 100ns/120ns SRM2017C10/12 SRM2017Cio 100ns SRM2017C12 120ns SRM2017Cio/i2 SRM2017C SRM2017C10 SRM2017

    srm2264lct

    Abstract: No abstract text available
    Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


    OCR Scan     		PDF SRM2264LTio/i2 64K-BIT SRM2264Lio/i2 SRM2264LTio 100ns SRM2264LT 120ns SRM2264LTio/i2 28-pin srm2264lct

    Untitled

    Abstract: No abstract text available
    Text: OCT 16 m? GoldStar GM76C28 CMOS 16K-BIT STATIC RAM GOLD STAR CO., LTD. Description The GM76C28to/u is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up


    OCR Scan     		PDF GM76C28 16K-BIT GM76C28to/u 76C28-10 100ns 76C28-12 120ns GM76C28wi2 GM76C28