NMOS TRANSISTOR 0.18 UM CMOS Search Results

magnachip 0.18um

Abstract: NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS
Contextual Info: 0.18um 1P4M High Voltage 30V updated in 2005.03.29 Features Voltage Logic(LV,MV ,High Voltage) ƒ 1.8V/5V/30V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV, MV-Device )

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

NMOS transistor 0.18 um CMOS

Abstract: 1P3M LOCOS
Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

Contextual Info: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

lm 7803

Abstract: BT 815 transistor 32nm matching p735 AL 5052 MD8253A bsim3 model BSIM
Contextual Info: Gate current: Modeling, AL extraction and impact on RF performance R. van Langevelde, A.J. Schölten, R. Duffy*, F.N. Cubaynes*, M.J. Knitel and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742418; Fax: +31-40-2744113; E-mail: ronald.van.langevelde@philips.com

XH035

Contextual Info: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and

S7 300

Abstract: MIL-PRF38535 analog lot id HLS3 HMXMUX01
Contextual Info: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fabricated on Silicon On Insulator SOI CMOS Technology SOI4 Process (Leff = 0.8 um) Total Dose Hardness ≥ 300k rad (Si) Dose Rate Upset Hardness

ALLEN BRADLEY

Abstract: 175150-1 Thais schematic SMPS 24V 50w E2713 RWR81 smps control ic with 6 pin sip SMPS SCHEMATIC DIAGRAM 36 Volt
Contextual Info: HIP5061 Semiconductor 7A, High Efficiency Current Mode Controlled PWM Regulator Features Description • Single Chip Current Mode Control IC The HIP5061 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the same Intelligent Power IC. The

Contextual Info: SC68C562 CMOS dual universal serial communications controller CDUSCC Product specification Supersedes data of 1994 Apr 27 fC19 Data Handbook Philips Semiconductors 1998 Sep 04 PHILIPS Product specification Philips Semiconductors CMOS Dual universal serial communications controller

a3202

Abstract: A3202 diode lt 0451 IC ICAN-8823 Equivalent diode her 208 vtam gm
Contextual Info: New Data Application Note CMOS Phase-Locked-Loop Applications Using the CD54/74HC/HCT4046A and CD54/74HC/HCT7046A by W.M.Austin This Application Note provides the circuit designer with information on the use of the CD54/74HC/HCT4046A Phase-Locked Loop PLL with voltage-controlled oscil­

TRANSISTOR A104b

Abstract: TRANSISTOR A107 EIAJ ED-4701 305 water pumping machine control schematic electromigration calculation for TTL smd transistor AIT AAAA series SMD transistor schematic diagram atom ED-4701 A103-C
Contextual Info: [ 3 ] Reliability Testing Contents 1. What is Reliability Testing . 1 1.1 Significance and Purpose of Reliability Testing. 1 1.2 1.3 Before Testing . 1

SERVICE MANUAL tv TCL

Abstract: PCB80C39 80C39 RBL 43 P TRANSISTOR PCB80C48 PCF80C39 C49P pcb80c PCB80C49 pc80c
Contextual Info: Philips Components V DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice. SINGLE-CHIP 8-BIT CMOS MICROCONTROLLER DESCRIPTION

Nippon capacitors

Abstract: MC12061 sine wave crystal controlled oscillator 145191
Contextual Info: Order this document byMC145190/D MOTOROLA H SEMICONDUCTOR TECHNICAL DATA Product Preview ^ MC145190 MC145191 1.1 GHz PLL Frequency Synthesizers • M Ü i i Î M i Include On-Board 64/65 Prescalers The MC145190 and MC145191 are single-package synthesizers with serial inter­

PCF80C39

Abstract: pc880c PCB80C48 PCB80C39 PCB80C49 pc80c C49P
Contextual Info: DEVELOPMENT DATA T h is data sheet contains advance in fo rm a tio n and sp e cificatio n s are subject to change w ith o u t n otice. PCB80C39 JIPCB80C49 SINGLE-CHIP 8-BIT CMOS MICROCONTROLLER DESCRIPTION The PC80CXX fam ily o f single-chip 8-bit CMOS m icrocontrollers consists of:

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors