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    NMOS STATIC RAM Search Results

    NMOS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    NMOS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2102

    Abstract: NTE210
    Text: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage


    Original     		PDF NTE2102 350ns NTE2101 NTE2102 NTE210

    81c52

    Abstract: P-DIP-16-1 interfacing of RAM with 8086 SAB8086 dip-16-1 SAB 8051 p SAB 8051 pin diagram of ic 8086 8086 logic diagram 8086 microprocessor max mode operation
    Text: SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible Preliminary DataCMOS IC PFeatures ● ● ● ● ● ● ● ● 256 x 8-bit organization Standby mode Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051


    Original     		PDF 81C52 P-DIP-16-1 P-DSO-20-1 81C52 Q67100-H9017 Q67100-H9015 P-DIP-16-1 interfacing of RAM with 8086 SAB8086 dip-16-1 SAB 8051 p SAB 8051 pin diagram of ic 8086 8086 logic diagram 8086 microprocessor max mode operation

    transistor A7

    Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
    Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being


    Original     		PDF

    80c86 intel

    Abstract: 8405201Qa hm6616 ss 6616 I80C86-2 80c86-2 intel MD80C86 hm-6616 ic smd code AD9 Intel 80c86
    Text: 80C86 TM CMOS 16-Bit Microprocessor March 1997 Features Description • Compatible with NMOS 8086 • Completely Static CMOS Design - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5MHz 80C86 - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8MHz (80C86-2)


    Original     		PDF 80C86 16-Bit 80C86) 80C86-2) 10mA/MHz C80C86 80c86 intel 8405201Qa hm6616 ss 6616 I80C86-2 80c86-2 intel MD80C86 hm-6616 ic smd code AD9 Intel 80c86

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    hm-6616

    Abstract: smd T3 BH 80c86 intel ss 6616 intel 82c84 clock generator 80c86-2 intel HM6616 marking code JG SMD SMD MARKING CODE AD0 smd diode S7
    Text: 80C86 TM CMOS 16-Bit Microprocessor August 22, 2006 Features Description • Compatible with NMOS 8086 • Completely Static CMOS Design - DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8MHz 80C86-2 • Low Power Operation - lCCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 A Max


    Original     		PDF 80C86 16-Bit 80C86-2) 10mA/MHz C80C86 M80C86 hm-6616 smd T3 BH 80c86 intel ss 6616 intel 82c84 clock generator 80c86-2 intel HM6616 marking code JG SMD SMD MARKING CODE AD0 smd diode S7

    4096 bit static RAM

    Abstract: NMC6132
    Text: NMC6132 E g National d u i Semiconductor NMOS RAMs PREVIEW NMC6132 32k Pseudo-Static NMOS RAM General Description Features The NMC6132 is a single 5V power supply pseudo-static NMOS RAM organized ^s'4096 words byffBiTSrJhecircuit uses single-transistor dyriamie storage CelTs with internal


    OCR Scan     		PDF NMC6132 NMC6132 28-pin time--200 time--350 4096 bit static RAM

    D2167

    Abstract: D2167-3 PD2167 UPD2167
    Text: . W I s C NEC Electronics p.PD2167 16,384x i - b i t STATIC NMOS RAM Truth Table Description The /U.PD2167 is a 16,384-word by 1-bit static MOS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static


    OCR Scan     		PDF uPD2167 PD2167 384-word jitPD2167 /xPD2167 PD2167 PD2167D 2167DS-REV2-7-83-CAT-L D2167 D2167-3

    pD2167

    Abstract: UPD2167
    Text: NEC NEC Electronics is . ^ xT bI t STATIC NMOS RAM D escription The /¿PD2167 is a 16,384-word by 1-bit static M OS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static memories. The ptPD2167 has a three-state output and otters a


    OCR Scan     		PDF uPD2167 384-word ptPD2167 PD2167 20-pin, PD2167 PD2167D 2167DS-REV2-7-83-CAT-L

    upd2149

    Abstract: No abstract text available
    Text: NEC ¿ PD2149 1,024 X 4-Bit STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The //PD2149 is a 4096-bit static Random Access Memory organized as 1024 words by 4 bits. Using a scaled NMOS technology, it incorporates an innovative


    OCR Scan     		PDF uPD2149 4096-bit PD2149 18-pin /PD2149 3-001637A

    D4016 RAM

    Abstract: D4016C CD 4016 PIN DIAGRAM nec d4016 D4016 D4016-2 RAM pd4016 4016 static ram 4016 RAM D4016C RAM
    Text: NEC NEC Electronics Inc. |jiPD4016 2,048 X 8-BIT STATIC NMOS RAM Revision 3 Description Pin Configuration The |jlPD4016 is a 16,384-bit static Random-access Memory device organized as 2,048 words by 8 bits. Using a scaled NMOS technology, its design provides the ease-of-use fea­


    OCR Scan     		PDF uPD4016 384-bit PD4016 600-mil-wide 24-pin jiPD4016 xPD4016 D4016 RAM D4016C CD 4016 PIN DIAGRAM nec d4016 D4016 D4016-2 RAM 4016 static ram 4016 RAM D4016C RAM

    SAB 8051 p

    Abstract: semiconductor smd ad 5.9 p35 SMD 6 PIN IC
    Text: SIEMENS 256 x 8-Bit Static CMOS RAM NMOS-Compatibie SAE 81C52 Preliminary DataCMOS IC P Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051


    OCR Scan     		PDF 81C52 SAE81C52 Q67100-H9017 P-DIP-16-1 P-DSO-20-1 81C52 256x8 SAB 8051 p semiconductor smd ad 5.9 p35 SMD 6 PIN IC

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128

    81C52P

    Abstract: SAB 8051 p 8051 memory organization SAE81C52 IEP00829 SAE j
    Text: SIEMENS SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families SAB 8086, SAB 8051 • Very low power dissipation


    OCR Scan     		PDF 81C52 P-DIP-16 P-DSO-20-1 81C52 Q67100-H9017 Q67100-H9015 P-DIP-16 P-DSO-20-1 81C52P SAB 8051 p 8051 memory organization SAE81C52 IEP00829 SAE j

    Untitled

    Abstract: No abstract text available
    Text: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families


    OCR Scan     		PDF 023SbD5 81C52 VPS05094 P-DSO-20-1 Q67100-H9017 P-DIP-16 IES008H 81C52

    ac 1501-50

    Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
    Text: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh


    OCR Scan     		PDF 7141M 4096x1) -200ns -300ns 495mW IM7141 4096-bit IM7141-2M IM7141-3M IM7141M ac 1501-50 DA10 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10

    hitachi eprom

    Abstract: HMCS6800
    Text: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC NMOS RAM D E S C R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve


    OCR Scan     		PDF MPD4104 MPD4104-1 MPD4104-2 PD4104 MPD4104 PD4104-2) LM27S2S DCH157M //PD42S18160,

    Untitled

    Abstract: No abstract text available
    Text: 256x8 Bit Static CMOS RAM NMOS-Compatible SAE81C52 Preliminary Data Type 0S A E 81C 52P 0S A E 81C 52G CMOS IC Ordering Code Package Q67100-H8003 Q67100-H8004 P-DIP-16 P-DSO-20 SMD The SAE 81C52 is a CMOS silicon gate, static random access memory (RAM), organized


    OCR Scan     		PDF 256x8 SAE81C52 Q67100-H8003 Q67100-H8004 P-DIP-16 P-DSO-20 81C52 81C52

    MB8128-15

    Abstract: MB8128-10 MB8128 8128-10 MBM2716 mb8128-15 cross MB6128-15
    Text: MB8128-10 MB8128-15 FU JITSU MICROELECTRONICS. INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The MB8128 is fabricated using N-channel silicon gate MOS tech­ nology. It uses fully static cir­ cuitry throughout and therefore requires no clocks or refreshing


    OCR Scan     		PDF 384-BIT MB8128 24-pin MB8416 MBM2716 MB8128-10 MB8128-15 MB8128-15 8128-10 MBM2716 mb8128-15 cross MB6128-15

    UPD2147

    Abstract: 2147 memory ic
    Text: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which


    OCR Scan     		PDF uPD2147A 4096-bit PD2147A 200mV UPD2147 2147 memory ic

    SCM21C14

    Abstract: 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM
    Text: SCM2114AL SOLID ^ STATE <§P SCIENTIFIC 1024 x 4 Static CMOS RAM Preliminary Pin Configuration Features i Fast Access Time Selection: 100ns/120ns/150ns/200ns i Direct Replacement for NMOS 2114 RAMs I 883 Qualified Version: 883/2114ALM i Three-State Outputs


    OCR Scan     		PDF SCM2114AL 100ns/120ns/150ns/200ns 883/2114ALM SCM2114AL 2114ALEIP SCM21C14 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM

    MB81C84A-35

    Abstract: MB81C84 mb81c84a
    Text: May 1990 Edition 1.0 FUjflSU DATA SHEET MB81C84A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 64K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C84A is a 65,536 words x 4 bits static random access memory fabricated with CMOS silicon gate process technology. The MB81C84A uses NMOS


    OCR Scan     		PDF MB81C84A-25/-35 256K-BIT MB81C84A MB81C84A-25 MB81C84A-35 24-LE DIP-24P-M MB81C84A-35 MB81C84

    NMC4864

    Abstract: No abstract text available
    Text: , PREVIEW NMC4864 64k Pseudo-Static Byte-Wide RAM NMC4864 NMOSRAMs National Semiconductor Features General Description • The NMC4864 is a single 5V power supply pseudo-static NMOS RAM organized a?;8l92w ords by S ijrtS jT h e c irc u it ■ uses singie -tra nslstor dynam ic sto ra g e 'ce lls w ith inte r­


    OCR Scan     		PDF NMC4864 NMC4864 8l92w