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onsemi NGTG15N60S1EG IGBT NPT 600V 30A TO-220AB
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NGTG15N60S1EG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGTG15N60S1EG		On Semiconductor	NGTG15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor		Original	PDF

NGTG15N60S1EG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G15N60S1G Abstract: No abstract text available Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8 Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1	PDF
G15N60S1G Abstract: No abstract text available Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
G15N60 Abstract: NGTG15N60 G15N60S1G Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G	PDF