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    G15N6 Search Results

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    G15N6 Price and Stock

    onsemi NGTG15N60S1EG

    IGBT NPT 600V 30A TO-220AB
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    DigiKey NGTG15N60S1EG Tube
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    EBV Elektronik NGTG15N60S1EG 143 Weeks 50
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    Vishay Siliconix SIHG15N60E-GE3

    MOSFET N-CH 600V 15A TO247AC
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    DigiKey SIHG15N60E-GE3 Tube 1
    • 1 $1.75
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    Vishay Intertechnologies SIHG15N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG15N60E-GE3)
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    Avnet Americas SIHG15N60E-GE3 Reel 21 Weeks 500
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    Mouser Electronics SIHG15N60E-GE3 1,074
    • 1 $3.6
    • 10 $2.6
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    TTI SIHG15N60E-GE3 Tube 500
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    TME SIHG15N60E-GE3 206 1
    • 1 $3.56
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    EBV Elektronik SIHG15N60E-GE3 22 Weeks 25
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    Vishay Intertechnologies IRFP26N60LPBF

    MOSFETs TO247 600V 26A N-CH MOSFET
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    TTI IRFP26N60LPBF Tube 400 25
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    Walsin Technology Corporation MG15N680J500CT

    Capacitor: ceramic; MLCC; 68pF; 50V; C0G (NP0); ±5%; SMD; 0402
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    TME MG15N680J500CT 400 100
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    Find more G15N6 price and stock on Findchips.com

    G15N6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G15N60

    Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB15N60 P-TO-263-3-2 G15N60 PG-TO-263-3-2 G15N60 G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 PDF

    G15N60

    Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB15N60 PG-TO-263-3-2 G15N60 G15N60 PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT PDF

    G15N60

    Abstract: No abstract text available
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGW30N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60 G15N60 PDF

    g15n60

    Abstract: G15N60 IGBT SGP15N60 sgw15n60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 PG-TO-247-3-2
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3 G15N60 15ontain g15n60 G15N60 IGBT SGP15N60 sgw15n60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 PG-TO-247-3-2 PDF

    G15N60S1G

    Abstract: No abstract text available
    Text: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G PDF

    G15N60

    Abstract: PG-TO-247-3-21 SGP15N60
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 PG-TO-247-3-21 PDF

    G15N60

    Abstract: G15N60 IGBT PG-TO-247-3-21
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 G15N60 IGBT PG-TO-247-3-21 PDF

    G15N60

    Abstract: Q67041-A4711 06mJ
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB15N60 SGB15N60 G15N60 Q67041-A4711 06mJ PDF

    G15N60

    Abstract: G15N60 IGBT PG-TO-247-3-21
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 G15N60 G15N60 IGBT PG-TO-247-3-21 PDF

    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SGB15N60HS P-TO-263-3-2 O-263AB) G15N60HS Q67040-S4ces. G15N60HS G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535 PDF

    G15N60

    Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8
    Text: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8 PDF

    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60HS G15N60HS G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2 PDF

    G15N60

    Abstract: 06mJ
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP15N60 SGW15N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N60 G15N60 06mJ PDF

    G15N60

    Abstract: IGBT 400V 100KHZ 30A
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB15N60 SGB15N60 G15N60 IGBT 400V 100KHZ 30A PDF

    G15N60

    Abstract: G15N60 IGBT PG-TO-247-3-21 PG-TO220-3-1 PG-TO-220-3-1 SGP30N60 SGW30N60 30A, 600v DIODE g15N6
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 G15N60 PG-TO-220-3-1ain G15N60 G15N60 IGBT PG-TO-247-3-21 PG-TO220-3-1 PG-TO-220-3-1 SGP30N60 SGW30N60 30A, 600v DIODE g15N6 PDF

    G15N60

    Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
    Text: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original     		NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1 PDF

    G15N60

    Abstract: No abstract text available
    Text: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		SGB15N60 P-TO-263-3-2 G15N60 PG-TO-263-3-2 PDF

    G15N60S1G

    Abstract: No abstract text available
    Text: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G PDF

    G15N60

    Abstract: NGTG15N60 G15N60S1G
    Text: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original     		NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G PDF

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 PDF