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    NF TRANSISTOR ARRAY Search Results

    NF TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3127MZ Rochester Electronics CA3127 - Transistor Array Visit Rochester Electronics Buy
    PAL16L8-7PCS Rochester Electronics PAL16L8 - 20-Pin TTL Programmable Array Logic Visit Rochester Electronics Buy
    PAL16L8B-4MJ/BV Rochester Electronics PAL16L8B - 20 Pin TTL Programmable Array Logic Visit Rochester Electronics Buy
    HFA3128B Renesas Electronics Corporation Ultra High Frequency Transistor Arrays Visit Renesas Electronics Corporation
    HFA3128RZ96 Renesas Electronics Corporation Ultra High Frequency Transistor Arrays Visit Renesas Electronics Corporation

    NF TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lm314

    Abstract: surface mount transistor A49 LM3146M lm3146n LM3146 10B4 diode KX 001 AN-450 C1995 DV10
    Text: LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited


    Original     		PDF LM3146 14-lead lm314 surface mount transistor A49 LM3146M lm3146n 10B4 diode KX 001 AN-450 C1995 DV10

    UPA101

    Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
    Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,


    Original     		PDF AN-SI-1001 UPA101/102/103/104 UPA104 UPA104 UPA104B UPA101 UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 RF TRANSISTOR NPN MICRO-X

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A) an5296 CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN

    an5296

    Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
    Text: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.


    Original     		PDF CA3146, CA3183 CA3146A, CA3183A, CA3183* 120MHz CA3183, an5296 Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
    Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 120MHz AN5296 Application of the CA3018 Integrated an5296 CA3146 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE

    cascode transistor array

    Abstract: NTE917
    Text: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise


    Original     		PDF NTE917 NTE917 300MHz. 120MHz. 004-j0 100MHz cascode transistor array

    TRANSISTOR C 2 SUB

    Abstract: UPA102G UPA102B
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded


    Original     		PDF UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin TRANSISTOR C 2 SUB UPA102G UPA102B

    UPA102G

    Abstract: UPA102B
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded


    Original     		PDF UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin 24-Hour UPA102G UPA102B

    a103g

    Abstract: a103g transistors UPA103G UPA103G-E1
    Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE


    Original     		PDF UPA103G UPA103G UPA103G-E1 24-Hour a103g a103g transistors UPA103G-E1

    a103g

    Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
    Text: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE


    Original     		PDF UPA103G UPA103G 2500/REEL A103G UPA103G-E1 34-6393/FAX a103g a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G-E1

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
    Text: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000


    Original     		PDF CA314 CA318 CA3146, CA3146A, CA3183, CA3183A CA3183A, AN5296 Application of the CA3018 Integrated an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083

    Untitled

    Abstract: No abstract text available
    Text: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


    OCR Scan     		PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A)

    KA 2717

    Abstract: MDC2125
    Text: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to


    OCR Scan     		PDF MDC2125/D MDC2125 738B-01 738B-02 738B-02 KA 2717 MDC2125

    Untitled

    Abstract: No abstract text available
    Text: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a


    OCR Scan     		PDF CA3146, CA3146A, CA3183, CA3183A CA3183

    Untitled

    Abstract: No abstract text available
    Text: Pfitttl G £ C P L E S S E Y ADVANCE INFORMATION DS3628 • 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fr of 3GHz and wideband noise


    OCR Scan     		PDF DS3628 SL3227 SL3227 CA3127 SL3127. 60MHz

    AN5296 Application of the CA3018 Integrated

    Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
    Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max


    OCR Scan     		PDF 43DP271 004703S CA3146, CA3183 CA3146A, CA3183A, CA3183* A3146A CA3146 AN5296 Application of the CA3018 Integrated TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY S [ M I O M U C I O K S ADVANCE INFORMATION SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical ( t of 3GHz and wideband noise


    OCR Scan     		PDF SL3227 SL3227 CA3127 SL3127. fl522 D21CH1 60MHz

    Untitled

    Abstract: No abstract text available
    Text: C PLESSEY Jpgtttt K mGEiuiiuinfim ii ADVANCE INFORMATION DS3629 - 1.3 SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The


    OCR Scan     		PDF DS3629 SL3245 SL3245 SL3045 SL3145. 60MHz

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 43E D B 37bflS22 QG1347A b BHPLSB GEC PLESS EY I S E M I C O N D U C T O R S I SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical I t of 3GHz and wideband noise


    OCR Scan     		PDF 37bflS22 QG1347A SL3227 SL3227 CA3127 SL3127 60MHz

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESS EY ADVANCE INFORMATION S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of live high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The


    OCR Scan     		PDF SL3245 SL3245 SL3045 SL3145. 37bfl522 0021GT3 60MHz

    SL3045C

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 43E D • 37böS22 0D134ÖD H M Pl-SB " T m - i S GEC PLESSEY ¡ S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a m onolithic array of five high frequency low current NPN transistors. The SL3245 consists of 3 isolated


    OCR Scan     		PDF 0D134Ã SL3245 SL3245 SL3045C SL3145 60MHz