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    NF 749 Price and Stock

    Glenair Inc 749-924NF2106A-7.00SR

    Circular MIL Spec Tools, Hardware & Accessories CONDUIT PRODUCTS - TEFLON CABLE/CONDUIT ASSY
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    Mouser Electronics 749-924NF2106A-7.00SR
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    Glenair Inc 749-924NF1506A-6.50SR

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    Mouser Electronics 749-924NF1506A-6.50SR
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    Glenair Inc 749-924NF1916A-7.00SR

    Circular MIL Spec Tools, Hardware & Accessories COMMERCIAL
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    Mouser Electronics 749-924NF1916A-7.00SR
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    Glenair Inc 749-657NF1916H-7.00

    Circular MIL Spec Tools, Hardware & Accessories CONDUIT PRODUCTS - TEFLON CABLE/CONDUIT ASSY
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    Mouser Electronics 749-657NF1916H-7.00
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    Glenair Inc 749-657NF2106A-7.00SR

    Circular MIL Spec Tools, Hardware & Accessories CONDUIT PRODUCTS - TEFLON CABLE/CONDUIT ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 749-657NF2106A-7.00SR
    • 1 $3257.03
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    NF 749 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TG12

    Abstract: SMBJ58A
    Text: 4 3 SS-7188S-A-NF SS-7188S-A-NF DATA2 RT1 75 RT2 75 RT3 75 RT4 75 RT5 75 RT6 75 RT7 75 RT8 75 SPARE2 RV1 SD4-90 OPT RV2 SD4-90 OPT RV3 SD4-90 OPT CT1 CT2 CT3 CT4 0.01uF 0.01uF 0.01uF 0.01uF RV4 SD4-90 200V 200V 200V 200V 0805S 0805S 0805S 0805S OPT CG2 1000pF


    Original     		PDF 7V-57V SD4-90 SD4-90 0805S 0805S 1000pF TG12 SMBJ58A

    pin diagram of ic 7494

    Abstract: SBFP540M 74945 cbc 547
    Text: SBFP540M Ordering number : ENN7494A NPN Epitaxial Planar Silicon Transistor SBFP540M UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications Features • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).


    Original     		PDF SBFP540M ENN7494A 20GHz 29GHz S21e2 pin diagram of ic 7494 SBFP540M 74945 cbc 547

    pin diagram of ic 7493

    Abstract: ic 7493 pin function of ic 7493 7493 IC 7493 pc data sheet IC 7493 TRANSISTOR cBC 415 marking MD 7493 7493 APPLICATION
    Text: Ordering number : ENN7493 SBFP450M SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP450M High-Frequency Medium-Output Amplifier, RF Driver / Power Amp Applications Features • • • • Low noise : NF=1.25dB typ f=1.8GHz . High cut-off frequency : fT=24GHz typ


    Original     		PDF ENN7493 SBFP450M 24GHz 17GHz S21e2 pin diagram of ic 7493 ic 7493 pin function of ic 7493 7493 IC 7493 pc data sheet IC 7493 TRANSISTOR cBC 415 marking MD 7493 7493 APPLICATION

    npn UHF transistor 2N5179

    Abstract: No abstract text available
    Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters


    Original     		PDF 2N5179 npn UHF transistor 2N5179

    Untitled

    Abstract: No abstract text available
    Text: Preliminary MMA001AA DC-20GHz, 16dB Gain Low-Noise Wideband Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω


    Original     		PDF MMA001AA DC-20GHz, 10GHz 26-29dBm

    Untitled

    Abstract: No abstract text available
    Text: MMA001AA DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω


    Original     		PDF MMA001AA DC-22GHz, 10GHz 26-29dBm MM-PDS-0002

    74945

    Abstract: cbc 547 SBFP540M TRANSISTOR cBC 449 74948 26.701 pin diagram of ic 7494 811 0305 01 12 mje t 5029 74947
    Text: SBFP540M Ordering number : ENN7494A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540M UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications Features • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).


    Original     		PDF SBFP540M ENN7494A 20GHz 29GHz S21e2 74945 cbc 547 SBFP540M TRANSISTOR cBC 449 74948 26.701 pin diagram of ic 7494 811 0305 01 12 mje t 5029 74947

    transistor NEC D 587

    Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage


    Original     		PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586

    NE38018 V68

    Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
    Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz


    Original     		PDF NE38018 NE38018-T1 NE38018-T2 NE38018 V68 transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792

    FMM5702X

    Abstract: FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		PDF FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702

    874 561 0 4V

    Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		PDF FMM5702X 27-32GHz FMM5702X FCSI0599M200 874 561 0 4V FMM5702 FUJITSU MMIC LNA

    FMM5702

    Abstract: FMM5702X 34500 544 mmic 2732G NF 936
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		PDF FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 34500 544 mmic 2732G NF 936

    874 561 0 4V

    Abstract: FMM5702X FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		PDF FMM5702X 27-32GHz FMM5702X 874 561 0 4V FMM5702

    2N5179

    Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


    Original     		PDF 2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    JESD51-7

    Abstract: MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041 911MHz
    Text: 19-0248; Rev 1; 6/09 KIT ATION EVALU E L B AVAILA High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to


    Original     		PDF 650MHz 1000MHz MAX2031 36dBm 1250MHz MAX2029. JESD51-7 MABAES0029 MAX2029 MAX2031ETP MAX2039 MAX2041 911MHz

    MAX2032

    Abstract: tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041
    Text: KIT ATION EVALU E L B AVAILA 19-4965; Rev 0; 9/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2032 high-linearity passive upconverter or downconverter mixer is designed to provide +33dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to


    Original     		PDF 650MHz 1000MHz MAX2032 33dBm 1250MHz MAX2029. tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041

    rf frequency oscilator tuned 2.3 ghz

    Abstract: BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041
    Text: KIT ATION EVALU E L B AVAILA 19-0248; Rev 1; 6/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to


    Original     		PDF 650MHz 1000MHz MAX2031 36dBm 1250MHz MAX2029. rf frequency oscilator tuned 2.3 ghz BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2031ETP MAX2039 MAX2041

    Untitled

    Abstract: No abstract text available
    Text: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		PDF NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312

    TC236

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 CO193 TC236

    21134 015

    Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		PDF NE38018 NE38018-T1 NE38018-T2 21134 015 nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz


    OCR Scan     		PDF NE24200 NE24200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •


    OCR Scan     		PDF E32400 IS12I