transistor m285
Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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167A690
182A934
1x106
1x1014
1x109
1x10-11
1x1012
5962H92153
36-Lead
28-Lead
transistor m285
167A690
transistor C013
transistor k450
transistor f630
182A934
cm c013
D650
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prom 238A790
Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)
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238A790
2x105
1x1012
28-Lead
28C256
AT28C256.
AS9000,
prom 238A790
238A790
BAE Systems prom 32K x 8
AEFJANTXV1N4100-1-BAE/TR/BAE
ppi interface 1007
S/Stag Programmer Orbit
AS9000
unisite
BAE Systems
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238A792
Abstract: No abstract text available
Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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238A792
1x106
1x1014
1x109
1x10-11
64-Lead
AS9000,
238A792
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Untitled
Abstract: No abstract text available
Text: Datasheet Standard Products RadHard-by-Design RHD5931 Digital-to-Analog Converter 11-Bit Buffered Output www.aeroflex.com/RHDseries March 17, 2014 FEATURES ? Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage: >1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s
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RHD5931
11-Bit
Typica85
SCD5931
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klystron
Abstract: WR975 waveguide Klystrons WR-975 coil gun mpp 250 WR975 VKP-8290A "electron gun"
Text: CPI Microwave Power Products MPP offers super-power klystrons for particle accelerator applications. The VKP-8290A is a 805 MHz, 2.5 MW peak, 250 kW average long-pulse klystron for the Spallation Neutron Source Project at Los Alamos National Laboratory.
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VKP-8290A
WR-975
klystron
WR975 waveguide
Klystrons
coil gun
mpp 250
WR975
"electron gun"
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190A325
Abstract: C710 D 5962h96877
Text: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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190A325
198A592
5962H96877
40-Lead
32-Lead
1x106
1x1014
1x109
1x10-11
C710 D
5962h96877
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prom 238A790
Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free
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238A790
28-Lead
2x105
1x1012
28C256
AT28C256.
AS9000,
x5040)
prom 238A790
AT28C256 rad
WY smd transistor
238A790
BAE Systems prom 32K x 8
VT101
Atmel PART DATE CODE
K109
AEFJANTXV1N4100-1-BAE/TR/BAE
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d1505
Abstract: ryton R-4 D15-05 d695 ryton GAMMA Radiation Detector D149-64 buchanan terminal blocks buchanan 200 series D790-91
Text: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. ERT Series, Medium Duty Radiation Resistant Physical Properties Effect of Radiation on Physical Properties The effects of radiation neutron and gamma particles on RYTON R-4 material have been studied. Since
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LR25557
E63810
d1505
ryton R-4
D15-05
d695
ryton
GAMMA Radiation Detector
D149-64
buchanan terminal blocks
buchanan 200 series
D790-91
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5962-1320101KXC
Abstract: RHD5932 RHD5932-201-2S 5962-1320101KXA
Text: Advanced Standard Products RadHard-by-Design RHD5932 Digital-to-Analog Converter 14-Bit, Buffered Output www.aeroflex.com/RHDseries March 19, 2013 FEATURES Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage:
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RHD5932
14-Bit,
14-Bit
Certif778-9229
SCD5932
5962-1320101KXC
RHD5932-201-2S
5962-1320101KXA
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Untitled
Abstract: No abstract text available
Text: 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 M.S. KENNEDY CORPORATION MSK Web Site: http://www.mskennedy.com/ August 31, 2010 MSK Announces Completion of Neutron Testing for RH1573 Based Regulators The MS Kennedy RH1573 based series of high performance low drop-out regulators
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RH1573
300Krad
10E12
MSK5826RH
MSK5800RH,
MSK5810RH,
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RHD5912-901-2S
Abstract: RHD5912
Text: Standard Products RadHard-by-Design RHD5912 Quad Comparator Open Drain Outputs www.aeroflex.com/RHDseries May 29, 2013 FEATURES Single power supply operation at 3.3V or 5.0V Radiation performance - Total dose: - ELDRS Immune - SEL Immune - Neutron Displacement Damage
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RHD5912
16-pin,
MIL-PRF-38534,
SCD5912
RHD5912-901-2S
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Untitled
Abstract: No abstract text available
Text: Advanced Standard Products RadHard-by-Design RHD5931 Digital-to-Analog Converter 11-Bit Buffered Output www.aeroflex.com/RHDseries December 13, 2011 FEATURES ❑ Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage:
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RHD5931
11-Bit
SCD5931
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S4 46
Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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225A833
1x106
1x1014
1x109
1x10-11
64-Lead
AS9000,
S4 46
AEFJANTXV1N4100-1-BAE/TR/BAE
225A833
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HX84050
Abstract: No abstract text available
Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2
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HX84050
1x1014
1x109
1x1011
1x10-10
200-Lead
HX84050
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UM9441
Abstract: UNITRODE GAMMA Radiation Detector
Text: UM9441 PIN RADIATION DETECTORS these devices is proportional only to the l-reglon volume and is independent of tem perature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy
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UM9441
UM9441
JM9441
UNITRODE
GAMMA Radiation Detector
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B20S
Abstract: FRK6764D FRK6764H FRK6764M FRK6764R TA9798
Text: Radiation-Hardened MOSFETs File N um b er 21 7 0 FRK6764M, FRK6764D FRK6764R, FRK6764H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons n -c h a n n e l e n h a n c e m e n t m o d e 38 A, 100 V rDs(on) = 0.055 n
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FRK6764M,
FRK6764D
FRK6764R,
FRK6764H
FRK6764M
FRK6764R
FRK6764H
1000K
B20S
TA9798
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Untitled
Abstract: No abstract text available
Text: UR105-UR125 UR205-UR225 RECTIFIERS Radiation Tolerant, 1 Amp-2 Amp DESCRIPTION These devices are particularly suited to applications where radiation is present. These units have unique ability to with stand high levels of neutron, gamma and electron radiation.
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UR105-UR125
UR205-UR225
UR105
UR110
UR115
UR120
UR125
UR205
UR210
UR215
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Untitled
Abstract: No abstract text available
Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)
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1x10e
1x101
36-Lead
28-Lead
HC6856
1E-10
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542 transistor
Abstract: TIP542
Text: TYPE TIP542 N-P-N SILICON POWER TRANSISTOR Min hFE ° f 10 at 4 V , 8 A after 5 X 1 0 14 Fast Neutrons/cm2 40 W at 100°C Case Temperature Max VcE sat of 0.8 V at lc = 10 A Min f j of 150 MHz at 5 V , 1 A 4 mJ Reverse Energy Rating description mechanical data
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TIP542
542 transistor
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2N5939
Abstract: 74222 2N5940
Text: TYPES 2N5939, 2N5940 N-P-N SILICON POWER TRANSISTORS R A D IA T IO N -T O L E R A N T TRAN SISTO RS FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S Formerly T IX P 3 9 , T IX P 4 0 of Min hFE of 10 at 4 V , 5 A after 1 X 10 14 Fast Neutrons/cm2
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2N5939,
2N5940
2N5939
74222
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Untitled
Abstract: No abstract text available
Text: TYPES TIC67, TIC68 P-N-P-N PLANAR EPITAXIAL SILICON REVERSE-BLOCKING TRIODE THYRISTORS R A D IA T IO N -T O L E R A N T T H Y R IS T O R S CO H C -< r "0 r m 2 0 A D C • 60 and 80 V O L T S m co HH zn Max I q t of 40 m A after 1 X 1014 Fast Neutrons/cm^
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TIC67,
TIC68
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TIP543
Abstract: No abstract text available
Text: TYPE TIP543 N-P-N SILICON POWER TRANSISTOR RADIATION-TOLERANT TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • c< r-o rm Min hFE o f 10 at 4 V , 5 A after 2 X 1014 Fast Neutrons/cm2 ¡1 40 W at 100°C Case Temperature zw Max VcE sat of 0-8 V at lc = 10 A, I b = 1 A
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TIP543
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transistor on 4409
Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409
Text: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2
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2N5399
2NS332
transistor on 4409
transistor on 4408
2NS399
TA968
A7016
2n 4409
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UM9441
Abstract: FX-25
Text: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors
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UM9441
UM9441
U21/2
FX-25
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