NEUTRON Search Results

2N5332

Contextual Info: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399

UM9441

Abstract: UNITRODE GAMMA Radiation Detector
Contextual Info: UM9441 PIN RADIATION DETECTORS these devices is proportional only to the l-reglon volume and is independent of tem­ perature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy

B20S

Abstract: FRK6764D FRK6764H FRK6764M FRK6764R TA9798
Contextual Info: Radiation-Hardened MOSFETs File N um b er 21 7 0 FRK6764M, FRK6764D FRK6764R, FRK6764H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons n -c h a n n e l e n h a n c e m e n t m o d e 38 A, 100 V rDs(on) = 0.055 n

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

238A792

Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: Datasheet Standard Products RadHard-by-Design RHD5931 Digital-to-Analog Converter 11-Bit Buffered Output www.aeroflex.com/RHDseries March 17, 2014 FEATURES ? Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage: >1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s

klystron

Abstract: WR975 waveguide Klystrons WR-975 coil gun mpp 250 WR975 VKP-8290A "electron gun"
Contextual Info: CPI Microwave Power Products MPP offers super-power klystrons for particle accelerator applications. The VKP-8290A is a 805 MHz, 2.5 MW peak, 250 kW average long-pulse klystron for the Spallation Neutron Source Project at Los Alamos National Laboratory.

Contextual Info: UR105-UR125 UR205-UR225 RECTIFIERS Radiation Tolerant, 1 Amp-2 Amp DESCRIPTION These devices are particularly suited to applications where radiation is present. These units have unique ability to with­ stand high levels of neutron, gamma and electron radiation.

190A325

Abstract: C710 D 5962h96877
Contextual Info: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

prom 238A790

Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free

d1505

Abstract: ryton R-4 D15-05 d695 ryton GAMMA Radiation Detector D149-64 buchanan terminal blocks buchanan 200 series D790-91
Contextual Info: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. ERT Series, Medium Duty Radiation Resistant Physical Properties Effect of Radiation on Physical Properties The effects of radiation neutron and gamma particles on RYTON R-4 material have been studied. Since

5962-1320101KXC

Abstract: RHD5932 RHD5932-201-2S 5962-1320101KXA
Contextual Info: Advanced Standard Products RadHard-by-Design RHD5932 Digital-to-Analog Converter 14-Bit, Buffered Output www.aeroflex.com/RHDseries March 19, 2013 FEATURES  Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage:

Contextual Info: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)

RHD5912-901-2S

Abstract: RHD5912
Contextual Info: Standard Products RadHard-by-Design RHD5912 Quad Comparator Open Drain Outputs www.aeroflex.com/RHDseries May 29, 2013 FEATURES  Single power supply operation at 3.3V or 5.0V  Radiation performance - Total dose: - ELDRS Immune - SEL Immune - Neutron Displacement Damage

Contextual Info: Advanced Standard Products RadHard-by-Design RHD5931 Digital-to-Analog Converter 11-Bit Buffered Output www.aeroflex.com/RHDseries December 13, 2011 FEATURES ❑ Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage:

542 transistor

Abstract: TIP542
Contextual Info: TYPE TIP542 N-P-N SILICON POWER TRANSISTOR Min hFE ° f 10 at 4 V , 8 A after 5 X 1 0 14 Fast Neutrons/cm2 40 W at 100°C Case Temperature Max VcE sat of 0.8 V at lc = 10 A Min f j of 150 MHz at 5 V , 1 A 4 mJ Reverse Energy Rating description mechanical data

2N5939

Abstract: 74222 2N5940
Contextual Info: TYPES 2N5939, 2N5940 N-P-N SILICON POWER TRANSISTORS R A D IA T IO N -T O L E R A N T TRAN SISTO RS FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S Formerly T IX P 3 9 , T IX P 4 0 of Min hFE of 10 at 4 V , 5 A after 1 X 10 14 Fast Neutrons/cm2

Contextual Info: TYPES TIC67, TIC68 P-N-P-N PLANAR EPITAXIAL SILICON REVERSE-BLOCKING TRIODE THYRISTORS R A D IA T IO N -T O L E R A N T T H Y R IS T O R S CO H C -< r "0 r m 2 0 A D C • 60 and 80 V O L T S m co HH zn Max I q t of 40 m A after 1 X 1014 Fast Neutrons/cm^

TIP543

Contextual Info: TYPE TIP543 N-P-N SILICON POWER TRANSISTOR RADIATION-TOLERANT TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • c< r-o rm Min hFE o f 10 at 4 V , 5 A after 2 X 1014 Fast Neutrons/cm2 ¡1 40 W at 100°C Case Temperature zw Max VcE sat of 0-8 V at lc = 10 A, I b = 1 A

transistor on 4409

Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409
Contextual Info: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

UM9441

Abstract: FX-25
Contextual Info: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors