NEC TRANSISTOR Search Results

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

nec scr

Contextual Info: NEC and California Eastern L a b s — A Partnership Built on Quality \ \ \ \ \ \ \ \ \ NEC is a global force in the To meet the rapidly growing demand computer, communications and home for their optocouplers, NEC has increased its NEC Products — CEL Service and Support

81E TRANSISTOR

Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Contextual Info: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power

2SC2558

Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
Contextual Info: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

transistor t07

Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

uPD95

Abstract: nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431
Contextual Info: NEC NEC Electronics Inc. CB-C8 0.5-Micron CMOS Cell-Based ASIC Design Manual March 1995 Document No. 70226-1 1995 NEC Electronics lnc./Printed in U.S.A. • b427525 ÜGÔ3304 bT3 ■ ft CONTENTS CHAPTER 1 GENERAL DESCRIPTION.

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8

Contextual Info: D O D -H -7 9 7 8 1/26 NEC TFT COLOR LCD MODULE Type: NL6448CC33-30W 26cm 10.4 Type , VGA SPECIFICATIONS (4thJEdition) PRELIMINARY This document is preliminary. All infonnation in this document is subject to change without prior notice. NEC Corporation NEC Electron Devices

Contextual Info: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The

Contextual Info: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power

NEC uPA101G

Abstract: UPA101B UPA101G
Contextual Info: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY

transistor f422 equivalent

Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
Contextual Info: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996

Contextual Info: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic

Contextual Info: NEC NEC Electronics Inc. Description //P C 4 55 8 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER Pin Configuration The ¿ PC4558 is a dual operational am plifier with internal frequency compensation. Using low noise lateral PNP input transistors on the am plifier inputs

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

Contextual Info: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

NE64800

Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES

uPD65801

Abstract: uPD65800 UPD65804
Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device

HPD711

Abstract: 3.5795MHz PD71101
Contextual Info: NEC APPLICA T/ON NOTE LOW-VOLTAGE OPERATION DRAM Document No. NEC Corporation 1996 M 1 1411E J2V 0A N 00 2nd edition Date Published July 1996 P Printed in Japan V805, V810, and V810 Family are tradem arks o f NEC Corporation. VGA is a tradem ark o f International Business Machines Corporation.

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­