NEC 500 DATASHEET Search Results

uPD720100

Abstract: 0409h uPD720110GC-8EA kds 12.000 uPD72011 PPB2 AT-49 uPD720110 TS10 48-mHz
Contextual Info: PRELIMINARY DATASHEET MOS INTEGRATED CIRCUIT µPD720110 USB2.0 Hub Controller Ver 0.91a The µPD720110 is a USB 2.0 hub device that complies with the Universal Serial Bus (USB) Specification Revision 2.0 and works up to 480Mbps. USB2.0 compliant transceivers are integrated for

C10535E

Abstract: VP15-00-3 UPC8104G A/M29F010B(45/70/90/MT352/CG/InMarSat modulator
Contextual Info: DATASHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8104GR UP CONVERTER + QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8104GR is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile

d1273

Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Contextual Info: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent

Semikron skiip 10 nec 063

Abstract: Semikron skiip 10 nec 063 I T 1 semikron skiip 10 nec skiip 11 nec 06 1 semikron skiip 11 nec semikron skiip nec miniskiip board miniskiip shunt 10nec06 SEMIKRON BOARD
Contextual Info: Datasheets for 600V-MiniSKiiP SKiiP 10 NEC 06 - SKiiP 10 NEC 06 I Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold

Contextual Info: PRELIMINARY DATASHEET MOS INTEGRATED CIRCUIT µPD720120 USB2.0 PHY Transceiver with SIE (Ver 0.8) The µPD720120 complies with the Universal Serial Bus Specification Revision 2.0 and work up to 480 Mbps. The µPD720120 integrates serial interface engine and USB2.0 transceiver into a single

Contextual Info: DATASHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR DESCRIPTION T h e 2 S C 2 1 4 8 , 2 S C 2 1 4 9 a re e co n o m ica l m ic ro w a v e tra n s is to rs PACKAGE DIMENSIONS e n c a p s u la te d in to new h e rm e tic s trip lin e p a cka g e s, "m icro X".

awm 20798 RIBBON CABLE

Abstract: awm STYLE 2919 COMPUTER CABLE 30V awm 2464 vw-1 300v shield cable specification M27500-24RC2S06 c2516 nec micro centronics 36 hp mini 2133 sata connector TPE 7058 DB15 male to db15 female G9731
Contextual Info: ND3% BASE1 XXXX4203-1158-1-P 1158 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 13:36 TS:TS date TS time CABLE ASSEMBLIES Find Datasheets Online COMPUTER CABLE ASSEMBLIES 0.80 mm DIGITAL CAMERA CABLE, POWER OVER CAMERALINK COMPATIBLE 3 SFP & SFP+ CABLE ASSEMBLIES CONT.

GE 2N6027

Abstract: 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

2N60758

Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

Contextual Info: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT ITH = 10 mA • HIGH SPEED tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:

NX5302

Abstract: NX5302EH NX5302EJ NX5302EK NX5302SH NX5302SJ NX7312UA LD chip
Contextual Info: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:

SC-95

Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
Contextual Info: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

NX6307

Abstract: NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX63067H NX63067K
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6307 SERIES FOR 2.5 Gb/s APPLICATIONS DESCRIPTION NEC's NX6307 Series is a 1 310 nm Multiple Quantum Well NX6307S Series MQW structured Distributed Feed-Back (DFB) laser diode

2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

2N60738

Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

A1310

Abstract: NX6301 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: PRELIMINARY DATASHEET 1310 nm FOR 156 Mb/s, 622 Mb/s NX6301 InGaAsP MQW-DFB LASER DIODE SERIES IN CAN PACKAGE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR:

NX6300GJ

Abstract: NX6300SJ STM-16
Contextual Info: PRELIMINARY DATASHEET 1310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE 10 mW NX6300 Series FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 10 mW • LOW THRESHOLD CURRENT: ITH = 12 mA @ TC = 25°C • HIGH SPEED: tr = 0.125 ns MAX tf = 0.2 ns MAX

IC/CTC 1351 transistor pin detail

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular

NX6306

Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode

NX6306

Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED:

Contextual Info: DATA SHEET O C M O S FET PS7211-2A 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 2 1 1 -2 A is a solid state relay con ta in in g a G a A s LED on the light em ittin g sid e (in pu t sid e) and M O S FETs on the o u tp u t side. It is su ita b le fo r analog sig na l con tro l be cau se of its lo w o ffse t and high linearity.

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 2 6 K 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The ^¡PC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters