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    California Eastern Laboratories (CEL) NE68119-T1

    RF TRANS NPN 10V 7GHZ 3SMINMOLD
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    DigiKey NE68119-T1 Cut Tape 1
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    California Eastern Laboratories (CEL) NE68119-T1-A

    SAME AS 2SC5007 NPN SILICON AMPL
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    NE68119-T1-A Digi-Reel 1
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    NE68119 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE68119 NEC Semiconductor Selection Guide Original PDF
    NE68119 NEC NPN silicon high frequency transistor. Original PDF
    NE68119-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF
    NE68119-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68119-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68119-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF

    NE68119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE68119

    Abstract: 140E-12
    Text: NE68119 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185.0 XCJC NF 1.02 CJS VAF 15.0 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11 FC


    Original     		PDF NE68119 7e-16 77e-11 0e-12 18e-12 21e-12 19e-9 2e-12 NE68119 140E-12

    NE68519

    Abstract: NE68019 NE68119 NE85619
    Text: Noise Figure and Associated Gain vs. Frequency 25 4.0 24 VCE = 2.5 V IC = 3.0 mA 23 22 3.0 NE85619 20 NE68119 NE68519 19 18 NE68019 17 16 15 2.0 14 13 12 11 10 1.0 9 NE68119 NE85619 Associated Gain, GA dB Noise Figure, NF (dB) 21 NE68519 8 7 NE68019 6 5


    Original     		PDF NE85619 NE68119 NE68519 NE68019 24-Hour NE68519 NE68019 NE68119 NE85619

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    Application Notes

    Abstract: catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016
    Text: APPLICATION NOTE APN1016: A Low Phase Noise VCO Design for PCS Handset Applications Introduction The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: The VCO design in a PCS handset must satisfy a number of


    Original     		PDF APN1016: Application Notes catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016

    Application Notes

    Abstract: Colpitts VCO design varactor 650 manual APN1007 SMP1320-079 spice Tuner Applications APN1006 diode SPICE model varactor diode q factor measurement C146P SMV1320-079
    Text: APPLICATION NOTE APN1015: A Dual-Band Switchable IF VCO for GSM/PCS Handsets Introduction Many of today’s handset cellular telephones are multifunctional, multiband units. They are complex RF systems with frequency plans requiring multiple RF sources. To accomplish this, the


    Original     		PDF APN1015: APN1007, Application Notes Colpitts VCO design varactor 650 manual APN1007 SMP1320-079 spice Tuner Applications APN1006 diode SPICE model varactor diode q factor measurement C146P SMV1320-079

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    Colpitts VCO design

    Abstract: saw Colpitts circuit design Colpitts VCO Alpha Industries APN1003 PN Junction Diode varactor Colpitts APN1002 m6 transitor varactor diode for Colpitts oscillator
    Text: Application Note VCO Designs for Wireless Handset and CATV Set-Top Applications APN1012 Introduction Voltage Controlled Oscillators VCOs have come to the forefront of RF designs together with the first PLL circuits. In the era before the PLL, oscillators were mostly free


    Original     		PDF APN1012 APN1005, APN1007, APN1001, APN1002, 8/99A Colpitts VCO design saw Colpitts circuit design Colpitts VCO Alpha Industries APN1003 PN Junction Diode varactor Colpitts APN1002 m6 transitor varactor diode for Colpitts oscillator

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    Colpitts VCO design

    Abstract: MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu
    Text: Application Note A Low Phase Noise VCO Design for PCS Handset Applications APN1016 The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: Introduction The VCO design in a PCS handset must satisfy a number


    Original     		PDF APN1016 APN1004, APN1006, APN1005, APN1007, APN1012, APN1013, 11/99A Colpitts VCO design MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    avx CR10

    Abstract: APN1005 varactor diode notes semiconductors catalogue reverse biasing a varactor diode NE68119 SMV1265 SMV1265-011 NEC k 2134 transistor x band varactor diode
    Text: APPLICATION NOTE APN1005: A Balanced Wideband VCO for Set-Top TV Tuner Applications Introduction VCO Model Modern set-top TV DBS tuner systems require more channel coverage, while maintaining competitive prices. This situation creates tough design goals: to improve performance and simplify


    Original     		PDF APN1005: SMV1265-011 avx CR10 APN1005 varactor diode notes semiconductors catalogue reverse biasing a varactor diode NE68119 SMV1265 NEC k 2134 transistor x band varactor diode

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469

    NE66100

    Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan     		PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139