2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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NE42484A
Abstract: nec, hetero junction transistor NE42484A NEC Ga FET marking L NE42484AS NE42484A-T1 NEC Ga FET marking C NEC Ga FET marking A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE42484A
Abstract: NE42484AS 7E-12 CHA 0438 NE4248 NE42484A-T1
Text: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 1.4 • HIGH ASSOCIATED GAIN: 10.5 dB TYP at 12 GHz 21 1.2 • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
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NE42484A
NE42484A
NE42484A-T1
NE42484AS
24-Hour
NE42484AS
7E-12
CHA 0438
NE4248
NE42484A-T1
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NE42484A-T1
Abstract: NE42484A NE42484AS
Text: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, IDS = 10 mA VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz 21 CD •o La = 0.35 im, Wo = 200 jim
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NE42484A
NE42484A
-1222L
NE42484AS
NE42484A-T1
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NE42484A-T1
Abstract: NE42484AS
Text: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz 21 L g = 0.35 Jim, W g = 200 |im
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NE42484A
NE42484A
NE42484AS
NE42484A-T1
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NE42484A
Abstract: No abstract text available
Text: SUPER LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE42484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V , I d s = 10 mA V E R Y L O W N O IS E F IG U R E : 0.8 dB typical at 12 G H z H IG H A S S O C IA T E D G A IN : 10.5 dB Typical at 12 G H z Lg = 0.35 fim, Wg = 200 nm
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NE42484A
lS21l
S21S12
IS12S21I
NE42484AS
NE42484A-T1
NE42484A
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NE42484A
Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484A
NE42484A
NE42484A-SL
NE42484A-T1
transistor NEC D 986
ne42484
IC ATA 2388
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking L
nec gaas fet marking
NEC Ga FET marking A
KU 506 transistor
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