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NEC Electronics Group NE32984D-T1A
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Bristol Electronics	NE32984D-T1A		11,910			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NE32984D Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE32984D		NEC	N-CHANNEL HJ-FET		Original	PDF
NE32984D-S		NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET		Original	PDF
NE32984D-SL		NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET		Original	PDF
NE32984D-T1		NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET		Original	PDF
NE32984D-T1		NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET		Original	PDF

NE32984D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE32984D Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE	Original	PDF	NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
NEC D288 Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116 Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	Original	PDF	NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
low noise, hetero junction fet Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	PDF	NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour low noise, hetero junction fet NE32984D-S NE32984D-T1 IS21S
nec d1594 Abstract: d2144 D1716 transistor D331 transistor d1397 KA transistor 26 to 40 GHZ transistor D734 D734 transistor NE32984D NE32984D-T1 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NE42484 Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324 Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX	Original	PDF	84S/84AS) 84-SL/84A-SL) NE32484A NE42484A NE32584C NE76084 NE32984D NE76184A NE33284A NE42484 NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	PDF	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Untitled Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I ds = 10 mA • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz 00 •a • Lg < 0.20 urn, W g = 200 im	OCR Scan	PDF	NE32984D NE32984D figu167 IS12I IS11I2 NE32984D-S NE32984D-T1
U/25/20/TN26/15/850/NE32984D Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s b 2V , Io s - 1 0 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m TJ • Lg S 0 .2 0 \|im , W g = 2 0 0 \|u n	OCR Scan	PDF	NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour U/25/20/TN26/15/850/NE32984D
Transistor NEC K 3654 Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS	OCR Scan	PDF	NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
NEC Ga FET marking L Abstract: U/25/20/TN26/15/850/NE32984D Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm	OCR Scan	PDF	NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D
Untitled Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • Lg < 0.20 ^m, WG = 200 \im	OCR Scan	PDF	NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour
840-SL Abstract: NE32984D U/25/20/TN26/15/850/NE32984D Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm	OCR Scan	PDF	NE32984D NE329640 NE329640-S NE329Ã 40-T1 NE32964D-SI 840-SL 840-SL NE32984D U/25/20/TN26/15/850/NE32984D
LORB Abstract: NE2720 NE334S01 Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18	OCR Scan	PDF	NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01
NE334S01 Abstract: E7138 nec microwave NE76084 NE67383 Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group \| helping you get your designs off paper and electronics markets. The company’s products	OCR Scan	PDF