ND 043 TRANSISTOR Search Results

zener 431

Abstract: 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526
Contextual Info: 2848352 DIODE TRANSISTOR CO A4 DE|afl4flBS2 DDDGltM 4 INC 84D 00 164 D T ‘ tl- ¿>1 | LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage

Low Noise Zener Diode

Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
Contextual Info: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

MRF586

Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Contextual Info: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and

MJE2901

Abstract: mje2801 TO-225AB
Contextual Info: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS

2N6767

Contextual Info: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.

chip die hp transistor

Contextual Info: Whol H EW LETT wLKM PA CK A RD MGA-63100 Medium Power 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 22 dBm typical Pi cmat 14 GHz High Gain: 10.5 dB typical Gi dB at 14 GHz Single Supply Bias

av dam he ne

Contextual Info: H IG H V O L T A G E P O W E R O P E R A T IO N A L A IV IP L ÎP IE R PA44 M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • SURFACE MOUNT PACKAGE • MCNGUTHI CMOS TECHNOLOGY • LCWOCOT • • •

2N117

Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Contextual Info: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory

GE opto detector

Contextual Info: SFH6943 Infineon Low Current Input Mini Optocoupler technologies ' Dimensions in Inches mm J l Anode i2 * n r Anode 2 .016 (.41) Common 3 1 i Cathode V Ce = 5 V Anode 4 L I • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS

2SC4813

Abstract: VDF pn C40r
Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

Contextual Info: R F RF2423 H MICRO DEVICES 100m W SPREAD-SPECTRUM TR A NSM ITTER 1C Typ ical A p plications • Digital and Analog Communication Systems • GMSK, QPSK, DQPSK, QAM Modulation • Spread Spectrum Communication Systems • AM, SSB, DSB Modulation • Portable Battery Powered Equipment

RT 083

Abstract: transistor BC 171 TRANSISTOR BC 173 low noise transistor bc 179
Contextual Info: u j U A12/SMA12 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.8 dB TYP. HIGH GAIN: 16 dB (TYP.) MEDIUM OUTPUT POWER: +8.0 dBm (TYP.) LOW VSWR: <1.6:1 (TYP.) Outline Drawings A12 Specifications’* Characteristic

Contextual Info: WJ-PA5 / SMPA5 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH THIRD ORDER IP.: +35 dBm TYP. HIGH OUTPUT POWER: +25 dBm (TYP.) LOW VSWR: < 1.5:1 (TYP.) OPERATION FROM +12 Vdc TO +15 Vdc : ;i-4* ¡ ¡ ¡ ¡ ill

ATF-45100

Abstract: ATF 45100 ATF45100 ATF45100-GP6
Contextual Info: HEULETT-PACKARD/ Wam H E W L E T T mLfim P A C K A R D CMPNTS b lE D • M 4 4 7 S S 4 □ 0 0 cl cî S 4 ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Features 3T7 ■ Chip Outline • High Output Power: 29.0 dBm typical Pi <ra at 4 GHz

WJ-CRA36

Contextual Info: ujU RA36 / SMRA36 100 to 2000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE in s u r f a c e m o u n t HIGH GAIN-THREE STAGES: 24.0 dB TYR LOW VSWR: 1.4:1 (TYR) MEDIUM OUTPUT LEVEL: +13.0 dBm (TYR) WIDE BANDWIDTH: 50-2100 MHz (TYR) Outline Drawings

Standish LCD

Abstract: STANDISH LCD DISPLAYS hamlin lcd hamlin 3909 3900-365-920 HD61100 3940-365-920 10.1 inch lcd with led backlight 40 pin connector pinout 3902-365-920 SIM204DSHWLE4
Contextual Info: Representing Electronic Components http://www.csc-intl.com • a n a d ia n S o u r c e C o r p o r a t io n Winnipeg Tel: 204 897-4401 Fax: (204) 897-3181 Ottawa Tel: (613) 592-5641 Fax: (905) 415-1953 Toronto Head Office Tel: (905) 415-1951 Fax:(905)415-1953

2N760A

Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
Contextual Info: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart­

2SJ411

Abstract: TC-8022 ru 4c diode
Contextual Info: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0

Contextual Info: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES

plji

Abstract: UES2602 UES2603 UE52603 UES2601 UES2601HR2 UES2601R UES2602HR2 UES2603HR2
Contextual Info: RECTIFIERS [j|g g g High Efficiency, 30ACenter-Tap UES2603 UES2601HR2 UES2602HR2 UES2603HR2 FE A TU R ES • Very Low Forward V oltage D E S C R IP T IO N T his series com bines tw o high efficiency • • • • • • devices into one package, sim plifying

ic f2114

Abstract: schematics for a PA amplifier RF2114 uhf linear amplifier
Contextual Info: RFEÜ RF2114 M ICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • Commercial and Consumer Systems

Contextual Info: uuU RA46 / SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH GAIN: 25.5 dB (TYR) HIGH OUTPUT POWER: +19.0 dBm (TYR) LOW NOISE: 4.5 dB (TYR) Outline Drawings RA46 Specifications*