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    NAND02GW4B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NAND02GW4B STMicroelectronics 2112 Byte/1056 Word Page 1.8V/3V NAND Flash Memory Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 PDF

    NAND02GW3B2C

    Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C Byte/1056 TSOP48 VFBGA63 NAND02GW3B2C ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G PDF

    VFBGA63

    Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C byte/1056 TSOP48 VFBGA63 NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program PDF

    NAND02GW3B2D

    Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 VFBGA63 VFBGA63 NAND02GW3B2D NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI NAND02GW3B2D-N PDF

    NAND02GW3B2C

    Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
    Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications


    Original     		NAND01G-B2B NAND02G-B2C 2112-byte/1056-word TSOP48 NAND02GW3B2C VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B PDF

    VFBGA63

    Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
    Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass


    Original     		NAND01G-B NAND02G-B Byte/1056 64Mbit VFBGA63 TFBGA63 TSOP48 NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand PDF

    "NAND Flash"

    Abstract: AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		AN1793 128Mbits 25thout "NAND Flash" AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand PDF

    verilog code hamming

    Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
    Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.


    Original     		AN1823 Byte/1056 verilog code hamming c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code PDF

    E2 nand flash

    Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.


    Original     		AN1759 NAND128R3A NAND256R3A NAND512R3A NAND01GR3A NAND128W3A NAND256W3A NAND512W3A NAND01GW3A NAND128R4A E2 nand flash st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A PDF

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820
    Text: AN1821 APPLICATION NOTE Garbage Collection in Single Level Cell NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION


    Original     		AN1821 NAND FLASH TRANSLATION LAYER FTL "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820 PDF

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL PDF

    USOP48

    Abstract: VFBGA63 FBGA63 NAND08GW4B
    Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit USOP48 VFBGA63 FBGA63 NAND08GW4B PDF

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D byte/1056 TSOP48 NAND02GR3B2D PDF

    NAND01G-B2B

    Abstract: TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02
    Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features • High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C 2112-byte/1056-word TSOP48 NAND01G-B2B TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02 PDF

    block code error management, verilog

    Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
    Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array


    Original     		NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit block code error management, verilog flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63 PDF

    VFBGA63

    Abstract: No abstract text available
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C byte/1056 TSOP48 VFBGA63 PDF

    FLASH TRANSLATION LAYER FTL

    Abstract: marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A
    Text: AN1820 APPLICATION NOTE How to Use the FTL and HAL Sotfware Modules to Manage Data in Single Level Cell NAND Flash Memories This Application Note gives an overview of the architecture of the Flash Translation Layer FTL and Hardware Adaptation Layer (HAL) software modules, which allow operating systems to read and write to NAND


    Original     		AN1820 FLASH TRANSLATION LAYER FTL marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A PDF

    NAND02GR3BAD

    Abstract: BIT3102
    Text: NAND02G-BxD 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		NAND02G-BxD 2112-byte/1056-word VFBGA63 TSOP48 NAND02GR3BAD BIT3102 PDF

    NAND02GR3B2D

    Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GR3B2D NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B PDF

    AN1793

    Abstract: NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B 128Mbits nand256w3a
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		AN1793 128Mbits 25thout AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B nand256w3a PDF

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: Numonyx NAND SLC large page 41 nm Discrete 2 and 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features • – Single and multiplane cache program – Cache read – Multiplane block erase Density – 2 Gbit: 2048 blocks ®


    Original     		Byte/1056 x8/x16, NAND02GR3B2D PDF

    NAND02GW3B2D

    Abstract: ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GW3B2D ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand PDF

    sram 2112

    Abstract: nand flash st nand flash application note ubda KS32C50100 RAM 2112 256 word AN1817 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1817 APPLICATION NOTE How to Connect a Single Level Cell NAND Flash Memory to a Generic SRAM Controller This Application Note describes how to connect an STMicroelectronics NAND Flash memory with a microcontroller that does not have an embedded NAND controller, using a glue-less interface.


    Original     		AN1817 128Mbits sram 2112 nand flash st nand flash application note ubda KS32C50100 RAM 2112 256 word AN1817 NAND128R3A NAND128R4A NAND128W3A PDF

    NAND02GR3B2D

    Abstract: No abstract text available
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D 2112-byte/1056-word NAND02GR3B2D PDF