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    NAND FLASH 128MBIT Search Results

    NAND FLASH 128MBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    NAND FLASH 128MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NAND512-A2C

    Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63 NAND512-A2C NAND512A2C NAND512R4A2C NAND512W4A2C

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM

    NANDA9R3N0

    Abstract: NANDA9R4N4 nanda8r3
    Text: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF x8/x16) 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 TFBGA149 VFBGA160 TFBGA152 NANDA9R3N0 NANDA9R4N4 nanda8r3

    Untitled

    Abstract: No abstract text available
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN8G08VS2635 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF 3DFN8G08VS2635 512Mx8 384KM 3DFP-0635-REV

    K9K1G08U0B

    Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08U0B K9K1G08B0B K9K1G08R0B 528-byte 3310H

    K9F1208B0B

    Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0

    K9F1208U0B-YCB0

    Abstract: 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208U0B-YCB0 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B

    Untitled

    Abstract: No abstract text available
    Text: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 4Gx8-SOP Flash Memory MODULE 3D FN32G08VS8633 32Gbit Flash Nand organized as 4Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF FN32G08VS8633 32Gbit 512MGx8 384KM 3DFP-0633-REV

    SAMSUNG K9F1208U0B

    Abstract: K9F1208* technical K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V
    Text: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B SAMSUNG K9F1208U0B K9F1208* technical K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V

    K9K1G08X0B

    Abstract: K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08X0B K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093

    K9K1G08U0B

    Abstract: No abstract text available
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08U0B

    K9F1208X0B-V

    Abstract: K9F1208B0B-Y K9F1208U0B-YCB0 K9F1208B0B-G K9F1208B0B K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V
    Text: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208X0B-V K9F1208B0B-Y K9F1208U0B-YCB0 K9F1208B0B-G K9F1208B0B K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V

    t 0433 transistor

    Abstract: NAND512R3A2D
    Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512xxA2D NAND01GxxA2C 512-Mbit, 528-byte/264-word TSOP48 VFBGA63 t 0433 transistor NAND512R3A2D

    HY27US08281A

    Abstract: hynix nand 4G HY27US16281A hy27us08281 16Mx8 flash 8m*16bit hynix nand flash 128mb HY27US hynix nand 8MX16BIT flash
    Text: HY27US 08/16 281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Document Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History Revision No. History 0.0 Initial Draft. 0.1 1) Correct Summary description & page.7 - The Cache feature is deleted in summary description.


    Original     		PDF HY27US 128Mbit 16Mx8bit 8Mx16bit) HY27US08281A hynix nand 4G HY27US16281A hy27us08281 16Mx8 flash 8m*16bit hynix nand flash 128mb hynix nand 8MX16BIT flash

    sram 2112

    Abstract: nand flash st nand flash application note ubda KS32C50100 RAM 2112 256 word AN1817 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1817 APPLICATION NOTE How to Connect a Single Level Cell NAND Flash Memory to a Generic SRAM Controller This Application Note describes how to connect an STMicroelectronics NAND Flash memory with a microcontroller that does not have an embedded NAND controller, using a glue-less interface.


    Original     		PDF AN1817 128Mbits sram 2112 nand flash st nand flash application note ubda KS32C50100 RAM 2112 256 word AN1817 NAND128R3A NAND128R4A NAND128W3A

    VFBGA63

    Abstract: VFBGA error free nand STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 VFBGA-63 serial flash 256Mb fast erase nand TSOP48 NAND128R4A NAND128W3A
    Text: NAND FLASH 528 Byte, 264 Word Page Family 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 1.8V, 3V Supply Flash Memories DATA BRIEFING FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES Figure 1. Packages – Up to 1 Gbit memory array – Up to 32Mbit spare area


    Original     		PDF x8/x16) 32Mbit TSOP48 VFBGA63 5x15x1 TFBGA63 9x11x1 VFBGA error free nand STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 VFBGA-63 serial flash 256Mb fast erase nand TSOP48 NAND128R4A NAND128W3A

    NAND512R3A2D

    Abstract: NAND512W3A2D NAND512R3A NAND01GW3A2C
    Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Preliminary Data Features ● ● High density NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications


    Original     		PDF NAND512xxA2D NAND01GxxA2C 512-Mbit, 528-byte/264-word TSOP48 VFBGA55 NAND512R3A2D NAND512W3A2D NAND512R3A NAND01GW3A2C

    NAND512W3A2C

    Abstract: No abstract text available
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word 512-Mbit NAND512W3A2C

    STn8800

    Abstract: STN*8800 AN1764 fsmc NOMADIK SMAD16 NAND128R3A NAND128W3A NAND128W4A NAND256R4A
    Text: AN1764 APPLICATION NOTE How to Connect NAND Flash Memories to a Nomadik Multimedia Application Processor CONTENTS This Application Note describes how to connect an STMicroelectronics NAND Flash memory to the ST Nomadik Multimedia Platform. It considers the Memory Interface and the Boot


    Original     		PDF AN1764 c1764 STn8800 STN*8800 AN1764 fsmc NOMADIK SMAD16 NAND128R3A NAND128W3A NAND128W4A NAND256R4A

    SAMSUNG MCP

    Abstract: MCP NAND
    Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


    Original     		PDF K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND

    toshiba nand tc58

    Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
    Text: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory