Z115
Abstract: 5-12-9B
Text: DATE DRAWING NUMBER L D C -N 2 5 0 4 R I REPLACES PART# LDQ-N254RI REPLACES PART# LDQ-N2504RI ELECTRO-OPTICAL CHARACTERISTICS TA - 2 5 'C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY EMITTED COLOR; FONT COLOR l SEGMENT COLOR:
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LDC-N2504RI
LDQ-N254RI
LDQ-N2504RI
TA-25
lr-10O
If-10mA
5-12-9B
635nm
Z115
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MCH3460
Abstract: No abstract text available
Text: MCH3460 Ordering number : ENN8111 MCH3460 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3460
ENN8111
900mm2
MCH3460
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064 diode
Abstract: MCH3333 marking YJ AM
Text: MCH3333 Ordering number : ENN7989 MCH3333 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3333
ENN7989
900mm2
064 diode
MCH3333
marking YJ AM
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MCH3320
Abstract: No abstract text available
Text: MCH3320 Ordering number : ENN7992 MCH3320 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3320
ENN7992
900mm2
MCH3320
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MCH3416
Abstract: No abstract text available
Text: MCH3416 Ordering number : ENN7996 N-Channel Silicon MOSFET MCH3416 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3416
ENN7996
900mm2
MCH3416
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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MCH3360
Abstract: No abstract text available
Text: MCH3360 Ordering number : ENN8109 MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3360
ENN8109
900mm2
MCH3360
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MCH3421
Abstract: No abstract text available
Text: MCH3421 Ordering number : ENN7997 MCH3421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3421
ENN7997
900mm2
MCH3421
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V 2238
Abstract: V2238 81062 N2504 CPH6612
Text: CPH6612 注文コード No. N 8 1 0 6 三洋半導体データシート N CPH6612 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。
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CPH6612
900mm2
900mm2
IT07177
IT07178
V 2238
V2238
81062
N2504
CPH6612
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LA6563
Abstract: HSOP36R LB-656 op829 11K23 b8555 78875
Text: 注文コード No.N 7 8 8 7 B 半導体データシート No.N7887A をさしかえてください。 モノリシックリニア集積回路 CD 用 LA6563 4ch ブリッジ BTL ドライバ 概要 LA6563は、CD用4chブリッジ(BTL)ドライバである。
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N7887A
LA6563
LA6563CD4ch
N2504
B8-5556
LB6563
LA6563
HSOP36R
LB-656
op829
11K23
b8555
78875
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MCH3421
Abstract: No abstract text available
Text: MCH3421 注文コード No. N 7 9 9 7 三洋半導体データシート N MCH3421 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。
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MCH3421
900mm2
400mA
400mA,
IT06002
900mm2
IT07674
IT07671
MCH3421
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CPH6612
Abstract: No abstract text available
Text: CPH6612 Ordering number : ENN8106 N-Channel Silicon MOSFET CPH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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CPH6612
ENN8106
900mm2
CPH6612
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marking WM
Abstract: MCH3360
Text: MCH3360 Ordering number : EN8109A SANYO Semiconductors DATA SHEET MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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MCH3360
EN8109A
900mm2
marking WM
MCH3360
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MCH6627
Abstract: No abstract text available
Text: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.
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MCH6627
ENN8000
MCH6627
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MARKING ZG
Abstract: MCH3431 8025-2
Text: MCH3431 Ordering number : EN8025A SANYO Semiconductors DATA SHEET MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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MCH3431
EN8025A
PW10s,
900mm20
MARKING ZG
MCH3431
8025-2
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MCH3321
Abstract: No abstract text available
Text: MCH3321 Ordering number : ENN7993 MCH3321 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3321
ENN7993
900mm2
MCH3321
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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CPH5614
Abstract: No abstract text available
Text: CPH5614 Ordering number : ENN8119 N-Channel Silicon MOSFET CPH5614 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
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CPH5614
ENN8119
600mm2
CPH5614
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MCH3431
Abstract: 8025-2 MARKING ZG
Text: MCH3431 Ordering number : ENN8025 MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3431
ENN8025
900mm2
MCH3431
8025-2
MARKING ZG
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MCH3322
Abstract: Marking jx
Text: MCH3322 Ordering number : ENN7994 MCH3322 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3322
ENN7994
900mm2
MCH3322
Marking jx
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MCH6627
Abstract: D-0300
Text: MCH6627 注文コード No. N 8 0 0 0 三洋半導体データシート N MCH6627 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに
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MCH6627
900mm2
IT03317
900mm2
IT04070
IT04071
MCH6627
D-0300
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CPH6329
Abstract: No abstract text available
Text: CPH6329 Ordering number : ENN8001 CPH6329 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH6329
ENN8001
900mm2
CPH6329
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MCH3415
Abstract: No abstract text available
Text: MCH3415 Ordering number : ENN7995 MCH3415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3415
ENN7995
900mm2
MCH3415
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transistor N342
Abstract: No abstract text available
Text: r Numerical Index Part Number Page 100. .34 101. . 36 102. . 34 103. .34 105. .38 106. .38 107. . 39
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