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    N-CHANNEL MOSFET VGS 3V Search Results

    N-CHANNEL MOSFET VGS 3V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET VGS 3V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 08-Apr-05

    BTA 16 6008

    Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 S-31726--Rev. 18-Aug-03 BTA 16 6008 bta 06 400 v BTA 06 600 T application note BTA 600

    Si7501DN

    Abstract: No abstract text available
    Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET


    Original     		PDF Si7501DN 07-mm Si7501DN-T1--E3 S-32419--Rev. 24-Nov-03

    SI7501DN-T1-E3

    Abstract: 72173 SI7501DN
    Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET


    Original     		PDF Si7501DN 07-mm Si7501DN-T1--E3 S-51129--Rev. 13-Jun-05 SI7501DN-T1-E3 72173

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 7.8 0.027 @ VGS = 4.5 V 6.4 0.042 @ VGS = –4.5 V –5.0 0.060 @ VGS = –2.5 V –4.0 D TrenchFETr Power MOSFET


    Original     		PDF Si4505DY 08-Apr-05

    S-20829

    Abstract: No abstract text available
    Text: Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 7.8 0.027 @ VGS = 4.5 V 6.4 0.042 @ VGS = –4.5 V –5.0 0.060 @ VGS = –2.5 V –4.0 D TrenchFETr Power MOSFET


    Original     		PDF Si4505DY S-20829--Rev. 17-Jun-02 S-20829

    SI7501DN

    Abstract: No abstract text available
    Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET


    Original     		PDF Si7501DN 07-mm Si7501DN-T1--E3 S-51129--Rev. 13-Jun-05

    Si4824DY

    Abstract: Si4824DY-T1
    Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V


    Original     		PDF Si4824DY Si4824DY-T1 18-Jul-08

    Si7501DN

    Abstract: No abstract text available
    Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET


    Original     		PDF Si7501DN 07-mm Si7501DN-T1--E3 08-Apr-05

    Si7501DN

    Abstract: si-7501 si7501dn-t1
    Text: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel - 30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = - 10 V - 6.4 0.075 @ VGS = - 6 V - 5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET


    Original     		PDF Si7501DN 07-mm Si7501DN-T1 S-03722--Rev. 07-Apr-03 si-7501

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		PDF Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-51408--Rev. 20-Jan-97

    Untitled

    Abstract: No abstract text available
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		PDF Si3529DV Si3529DV-T1--E3 08-Apr-05

    p channel de mosfet

    Abstract: list of P channel power mosfet Si4567DY si4567
    Text: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7


    Original     		PDF Si4567DY Si4567DY-T1--E3 08-Apr-05 p channel de mosfet list of P channel power mosfet si4567

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V - 4.8 • TrenchFET Power MOSFET


    Original     		PDF Si4501ADY Si4501ADY-T1 Si4501ADY-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix New Product N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 7.8 0.027 at VGS = 4.5 V 6.4 0.042 at VGS = - 4.5 V - 5.0 0.060 at VGS = - 2.5 V - 4.0 • TrenchFET Power MOSFET


    Original     		PDF Si4505DY Si4505DY-T1 Si4505DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7


    Original     		PDF Si4567DY Si4567DY-T1--E3 18-Jul-08

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N Channel N-Channel 30 P Channel P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = - 4.5 V "6.2 0.060 @ VGS = - 2.5 V


    Original     		PDF Si4501DY 08-Apr-05

    SI4567DY

    Abstract: No abstract text available
    Text: Si4567DY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = −10 V −4.4 0.122 @ VGS = −4.5 V −3.7


    Original     		PDF Si4567DY Si4567DY-T1--E3 S-51127--Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4501ADY Vishay Siliconix Complementary N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 8.8 0.027 at VGS = 4.5 V 7.0 0.042 at VGS = - 4.5 V - 5.7 0.060 at VGS = - 2.5 V - 4.8 • TrenchFET Power MOSFET


    Original     		PDF Si4501ADY Si4501ADY-T1 Si4501ADY-T1-E3 08-Apr-05

    Si4501DY

    Abstract: No abstract text available
    Text: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N Channel N-Channel 30 P Channel P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = - 4.5 V "6.2 0.060 @ VGS = - 2.5 V


    Original     		PDF Si4501DY S-61812--Rev. 19-Jul-99

    Untitled

    Abstract: No abstract text available
    Text: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7


    Original     		PDF Si4567DY Si4567DY-T1--E3 52241--Rev. 24-Oct-05

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix New Product N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 7.8 0.027 at VGS = 4.5 V 6.4 0.042 at VGS = - 4.5 V - 5.0 0.060 at VGS = - 2.5 V - 4.0 • TrenchFET Power MOSFET


    Original     		PDF Si4505DY Si4505DY-T1 Si4505DY-T1-E3 18-Jul-08

    72032

    Abstract: Si3590DV
    Text: Si3590DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3 0.120 @ VGS = 2.5 V 2 0.170 @ VGS = -4.5 V -2 0.300 @ VGS = -2.5 V -1.2 D TrenchFETr Power MOSFET


    Original     		PDF Si3590DV S-21979--Rev. 04-Nov-02 72032